2SK2736-E [RENESAS]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关型号: | 2SK2736-E |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | Silicon N Channel MOS FET High Speed Power Switching |
文件: | 总7页 (文件大小:88K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SK2736
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1030-0200
(Previous: ADE-208-544)
Rev.2.00
Sep 07, 2005
Features
•
Low on-resistance
RDS(on) = 20 mΩ typ. (VGS = 10 V, ID = 15 A)
4 V gate drive devices.
High speed switching
•
•
Outline
RENESAS Package code: PRSS0003AE-A
(Package name: TO-220C•FM)
D
1. Gate
2. Drain
3. Source
G
1
2
3
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK2736
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
Ratings
Unit
30
V
V
VGSS
±20
ID
30
120
A
1
Drain peak current
ID(pulse)
IDR
Pch*2
*
A
Body to drain diode reverse drain current
Channel dissipation
30
A
25
W
°C
°C
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
—
Max
Unit
V
Test Conditions
ID = 10 mA, VGS = 0
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
V(BR)DSS
V(BR)GSS
IDSS
30
±20
—
—
1.0
—
—
12
—
—
—
—
—
—
—
—
—
—
—
—
V
IG = ±100 µA, VDS = 0
VDS = 30 V, VGS = 0
VGS = ±16 V, VDS = 0
ID = 1 mA, VDS = 10 V
ID = 15 A, VGS = 10 V*3
ID = 15 A, VGS = 4 V*3
ID = 15 A, VDS = 10 V*3
—
10
±10
2.0
28
50
—
µA
µA
V
IGSS
—
VGS(off)
RDS(on)
RDS(on)
|yfs|
—
Static drain to source on state
resistance
20
mΩ
mΩ
S
35
Forward transfer admittance
Input capacitance
18
Ciss
Coss
Crss
td(on)
tr
750
520
210
16
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
—
—
—
VGS = 10 V, ID = 15 A,
RL = 0.67 Ω
260
85
—
Turn-off delay time
Fall time
td(off)
tf
—
90
—
Body to drain diode forward voltage
VDF
1.0
45
—
IF = 30A, VGS = 0
Body to drain diode reverse recovery
time
trr
—
ns
IF = 30A, VGS = 0
diF/ dt = 50A/µs
Note: 3. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK2736
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
500
40
30
20
10
200
100
50
20
10
5
Operation in
this area is
limited by R
DS(on)
2
1
Ta = 25°C
0.5
0
3
30
0.1 0.3
1
10
100
50
100
150
200
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
50
40
30
20
10
50
40
30
20
10
Pulse Test
4.5 V
10 V
6 V
5 V
25°C
–25°C
Tc = 75°C
4 V
3.5 V
VGS = 3 V
VDS = 10 V
Pulse Test
0
0
2
4
6
8
10
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
500
1.0
0.8
0.6
0.4
0.2
Pulse Test
Pulse Test
200
100
50
VGS = 4 V
ID = 20 A
20
10
5
10 V
10 A
5 A
12
0
4
8
16
20
1
2
5
10
20
50 100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK2736
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
100
30
100
80
60
40
20
Pulse Test
Tc = –25°C
10
25°C
75°C
ID = 20 A
VGS = 4 V
3
1
5, 10 A
5, 10, 20 A
0.3
0.1
VDS = 10 V
Pulse Test
10 V
0
–40
0
40
80
120
160
0.1 0.3
1
3
10
30
100
Case Temperature TC (°C)
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance
vs. Drain to Source Voltage
10000
5000
1000
300
VGS = 0
f = 1 MHz
100
2000
1000
500
30
10
Ciss
Coss
3
1
200
100
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
Crss
0.1 0.3
1
3
10
30
100
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
ID = 30 A
Switching Characteristics
50
40
30
20
10
20
1000
300
100
16
12
8
VDD = 5 V
10 V
25 V
t
f
t
VDS
d(off)
t
r
30
10
VGS
t
d(on)
4
0
VDD = 25 V
10 V
5 V
3
1
VGS = 10 V, VDD = 10 V
PW = 5 µs, duty < 1 %
0
8
16
24
32
40
0.1 0.3
1
3
10
30
100
Drain Current ID (A)
Gate Charge Qg (nc)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK2736
Reverse Drain Current vs.
Source to Drain Voltage
50
40
30
20
10
10 V
VGS = 0, –5 V
5 V
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
V
(V)
SD
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 5.0°C/W, Tc = 25°C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Waveform
90%
Vout
Monitor
10%
10%
Vin
D.U.T.
RL
Vout
10%
VDD
= 10 V
Vin
10 V
90%
90%
50 Ω
t
t
t
f
t
d(off)
d(on)
r
Rev.2.00 Sep 07, 2005 page 5 of 6
2SK2736
Package Dimensions
JEITA Package Code
RENESAS Code
PRSS0003AE-A
Package Name
MASS[Typ.]
1.9g
Unit: mm
TO-220CFM / TO-220CFMV
4.5 0.3
2.7 0.2
10.0 0.3
φ 3.2 0.2
1.0 0.2
1.15 0.2
2.5 0.2
0.6 0.1
2.54
2.54
0.7 0.1
Ordering Information
Part Name
Quantity
Shipping Container
2SK2736-E
50 pcs
Plastic magazine
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
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Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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