2SK1859-E [RENESAS]
Silicon N Channel MOS FET; 硅N沟道MOS FET
| 型号： | 2SK1859-E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET |
| 文件： | 总7页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK1859
Silicon N Channel MOS FET
REJ03G0981-0200
(Previous: ADE-208-1328)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
D
1. Gate
G
2. Drain
3. Source
S
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1859
Absolute Maximum Ratings
(Ta = 25°C)
Unit
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
900
V
V
±30
6
A
*1
Drain peak current
ID(pulse)
15
A
Body to drain diode reverse drain current
Channel dissipation
IDR
Pch*2
Tch
6
60
A
W
°C
°C
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
900
±30
—
Typ
—
Max
—
Unit
V
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 720 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 3 A, VGS = 10 V*3
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
V(BR)DSS
V(BR)GSS
IGSS
—
—
V
—
±10
250
3.0
3.0
µA
µA
V
IDSS
—
—
VGS(off)
RDS(on)
2.0
—
—
Static drain to source on state
resistance
2.0
Ω
Forward transfer admittance
Input capacitance
|yfs|
Ciss
Coss
Crss
td(on)
tr
2.3
—
—
—
—
—
—
—
—
—
3.7
980
400
195
20
—
—
—
—
—
—
—
—
—
—
S
ID = 3 A, VDS = 20 V*3
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
ID = 3 A, VGS = 10 V,
RL = 10 Ω
80
Turn-off delay time
Fall time
td(off)
tf
125
100
0.9
Body to drain diode forward voltage
VDF
trr
IF = 6 A, VGS = 0
Body to drain diode reverse
recovery time
1000
ns
IF = 6 A, VGS = 0,
diF/dt = 100 A/µs
Note: 3. Pulse Test
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK1859
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
90
50
30
10
60
30
3
1
0.3
0.1
Ta = 25°C
0.05
0
50
100
150
1
3
10
30
100 300 1000
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
10 V
6 V
Typical Transfer Characteristics
10
8
5
4
3
2
1
VDS = 20 V
Pulse Test
Pulse Test
5.5 V
6
5 V
4
75
°
°
C
C
4.5 V
Ta = 25
2
–25
6
°C
VGS = 4 V
0
10
20
30
40
50
0
2
4
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
20
16
12
8
50
Pulse Test
ID = 5 A
Pulse Test
20
10
5
VGS = 10 V
15 V
2
1
2 A
1 A
4
0.5
0
4
8
12
16
20
0.2
0.5
1
2
5
10
20
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK1859
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
10
8
10
5
VGS = 10 V
Pulse Test
–25°C
TC = 25°C
75°C
2
1
6
2 A
ID = 5 A
4
0.5
1 A
2
VDS = 20 V
Pulse Test
0.2
0.1
0
–40
0
40
80
120
160
0.05 0.1 0.2
0.5
1
2
5
Case Temperature TC (°C)
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10,000
1,000
100
5,000
VGS = 0
f = 1 MHz
di/dt = 100 A/µs, Ta = 25°C
VGS = 0
Pulse Test
2,000
1,000
500
Ciss
Coss
Crss
200
100
50
10
0
10
20
30
40
50
0.1 0.2
0.5
1
2
5
10
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
1,000
800
600
400
200
20
16
12
8
500
.
VGS = 10 V, VDD =. 30 V
PW = 2 µs, duty < 1%
td (off)
VDD = 250 V
400 V
600 V
200
100
50
tf
tr
VDS
VGS
td (on)
20
10
5
ID = 6 A
600 V
400 V
4
VDD = 250 V
0
0
20
40
60
80
100
0.1 0.2
0.5
1
2
5
10
Drain Current ID (A)
Gate Charge Qg (nc)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK1859
Reverse Drain Current vs.
Source to Drain Voltage
10
8
Pulse Test
6
4
2
5 V, 10 V
VGS = 0, –5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D = 1
0.5
0.3
0.1
0.2
0.1
θch – c(t) = γs(t) • θch – c
θch – c = 2.08°C/W, Tc = 25°C
PDM
0.05
0.02
PW
D =
0.03
0.01
PW
T
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Waveforms
Switching Time Test Circuit
Vin Monitor
90%
Vout Monitor
Vin
D.U.T
10%
10%
RL
10%
Vout
50 Ω
VDD
= 30 V
Vin
10 V
90%
tr
90%
td (off)
td (on)
tf
Rev.2.00 Sep 07, 2005 page 5 of 6
2SK1859
Package Dimensions
JEITA Package Code
SC-93
RENESAS Code
PRSS0003ZA-A
Package Name
MASS[Typ.]
5.2g
TO-3PFM / TO-3PFMV
Unit: mm
5.5 0.3
15.6 0.3
+ 0.4
– 0.2
φ3.2
3.2 0.3
4.0 0.3
2.6
1.6
0.86
0.86
+ 0.2
– 0.1
+ 0.2
0.9
– 0.1
0.66
5.45 0.5
5.45 0.5
Ordering Information
Part Name
Quantity
Shipping Container
2SK1859-E
360 pcs
Box (Tube)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0
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