2SK1838STL-E [RENESAS]
Silicon N Channel MOS FET; 硅N沟道MOS FET
| 型号： | 2SK1838STL-E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET |
| 文件： | 总8页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK1838(L), 2SK1838(S)
Silicon N Channel MOS FET
REJ03G0980-0300
Rev.3.00
Nov 21, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004ZD-A
(Package name: DPAK(L)-(1))
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
4
D
4
1. Gate
G
2. Drain
3. Source
4. Drain
1
2
3
S
1
2
3
Rev.3.00 Nov 21, 2005 page 1 of 7
2SK1838(L), 2SK1838(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
Unit
250
V
V
±30
1
A
*1
Drain peak current
ID(pulse)
2
A
Body to drain diode reverse drain current
Channel dissipation
IDR
Pch*2
Tch
1
10
A
W
°C
°C
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
250
±30
—
Typ
—
Max
—
Unit
V
Test conditions
ID = 10 mA, VGS = 0
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Forward transfer admittance
V(BR)DSS
V(BR)GSS
IGSS
—
—
V
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 200 V, VGS = 0
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 0.5 A *3
ID = 0.5 A, VGS = 10 V *3
—
±10
50
µA
µA
V
IDSS
—
—
VGS(off)
|yfs|
2.0
0.3
—
—
3.0
—
0.5
5.5
S
Static drain to source on state
resistance
RDS(on)
8.0
Ω
Input capacitance
Ciss
Coss
Crss
td(on)
tr
—
—
—
—
—
—
—
—
—
60
30
5
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
5
VGS = 10 V, ID = 0.5 A,
RL = 60 Ω
6
Turn-off delay time
Fall time
td(off)
tf
10
4.5
0.96
160
Body to drain diode forward voltage
VDF
trr
IF = 1 A, VGS = 0
Body to drain diode reverse recovery
time
ns
IF = 1 A, VGS = 0,
diF/dt = 100 A/µs
Note: 3. Pulse test
Rev.3.00 Nov 21, 2005 page 2 of 7
2SK1838(L), 2SK1838(S)
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
20
15
10
5
10
3
1
0.3
0.1
Operation in this area
is limited by RDS (on)
0.03
0.01
Ta = 25°C
0
50
100
150
200
1
3
10
30
100 300 1000
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
8 V
6 V
5 V
10 V
Pulse Test
VDS = 10 V
Pulse Test
4.5 V
4 V
0.2
25°C
Tc = 75°C
VGS = 3.5 V
– 25°C
0
2
4
6
8
10
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
50
5
4
3
2
1
Pulse Test
Pulse Test
VGS = 10 V
20
10
5
0.5 A
2
1
0.2 A
ID = 0.1 A
0.5
0.02 0.05 0.1 0.2
0.5
1
2
0
8
12
20
4
16
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.3.00 Nov 21, 2005 page 3 of 7
2SK1838(L), 2SK1838(S)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
5
25
20
15
10
5
Pulse Test
VDS = 10 V
Pulse Test
VGS = 10 V
2
1
Tc = – 25 C
25 C
0.5
ID = 0.5 A
75 C
0.2
0.1
0.1 A
0.2 A
0
– 40
0.05
0.02
0.05 0.1 0.2
0.5
1
2
0
40
80
120
160
Case Temperature TC (°C)
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
1000
500
1000
100
VGS = 0
f = 1 MHz
200
100
Ciss
Coss
50
10
1
µ
VGS = 0, Ta = 25 C
di / dt = 100 A /
s
20
10
Crss
0.05 0.1 0.2
0.5
1
2
5
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
20
500
400
300
200
100
100
50
V
= 10 V, V
= 30 V
GS
DD
PW = 2 µs, duty ≤ 1 %
ID = 0.5 A
16
12
VGS
t
f
20
10
t
d (off)
VDD = 200 V
100 V
50 V
VDS
8
4
0
t
d (on)
5
t
r
VDD = 200 V
2
1
100 V
50 V
0
4
8
12
16
20
0.05 0.1 0.2
0.5
1
2
5
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.3.00 Nov 21, 2005 page 4 of 7
2SK1838(L), 2SK1838(S)
Reverse Drain Current vs.
Source to Drain Voltage
1.0
0.8
0.6
Pulse Test
0.4
0.2
VGS = 10 V
0, – 5 V
1.2
0
0.4
0.8
1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D = 1
0.5
Tc = 25°C
1.0
0.2
0.3
0.1
0.1
γ
θch – c(t) = s(t)•θ ch – c
0.05
θch – c = 12.5°C / W. Tc = 25°C
PW
0.02
D =
T
PDM
0.03
0.01
0.01
PW
1
T
µ
100 m
µ
10 m
10
100
10
1 m
Pulse Width PW (S)
Switching Time Test Circuit
Waveforms
Vin Monitor
90 %
Vout Monitor
Vin
10 %
10 %
D.U.T
R L
10 %
Vout
Vin
50 Ω
10 V
.
.
VDD 30 V
90 %
t
d (off)
90 %
=
t
t
t
d (on)
f
r
Rev.3.00 Nov 21, 2005 page 5 of 7
2SK1838(L), 2SK1838(S)
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
0.42g
Unit: mm
PRSS0004ZD-A
DPAK(L)-(1) / DPAK(L)-(1)V
6.5 0.5
5.4 0.5
2.3 0.2
0.55 0.1
1.2 0.3
1.15 0.1
0.8 0.1
0.55 0.1
2.29 0.5
2.29 0.5
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Package Name
MASS[Typ.]
0.28g
Unit: mm
DPAK(S) / DPAK(S)V
2.3 0.2
6.5 0.5
5.4 0.5
(5.1)
0.55 0.1
(0.1)
(0.1)
0 – 0.25
(1.2)
0.55 0.1
1.0 Max.
0.8 0.1
2.29 0.5
2.29 0.5
Rev.3.00 Nov 21, 2005 page 6 of 7
2SK1838(L), 2SK1838(S)
Ordering Information
Part Name
Quantity
Shipping Container
2SK1838L-E
3200 pcs
3000 pcs
Box (Sack)
Taping
2SK1838STL-E
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00 Nov 21, 2005 page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .5.0
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