2SK1070PIETR-E [RENESAS]
50mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, MPAK-3;
| 型号： | 2SK1070PIETR-E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 50mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, MPAK-3 晶体 小信号场效应晶体管 光电二极管 放大器 |
| 文件： | 总5页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK1070
Silicon N-Channel Junction FET
REJ03G0574-0200
(Previous ADE-208-1175 (Z))
Rev.2.00
Mar.14.2005
Application
•
Low frequency / High frequency amplifier
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
1. Drain
2. Source
3. Gate
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Gate to drain voltage
Gate to source voltage
Drain current
Symbol
VGDO
VGSO
ID
Ratings
–22
Unit
V
V
–22
50
mA
mA
mW
°C
Gate current
IG
10
Channel power dissipation
Channel temperature
Storage temperature
Pch
Tch
150
150
Tstg
–55 to +150
°C
Rev.2.00, Mar.14.2005, page 1 of 4
2SK1070
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
—
Typ
—
—
—
—
30
9
Max
–10
—
Unit
nA
V
Test conditions
Gate cutoff current
IGSS
VGS = –15 V, VDS = 0
Gate to source breakdown voltage
Drain current
V(BR)GSS
–22
12
0
IG = –10 µA, VDS = 0
1
IDSS
*
40
mA
V
VDS = 5 V, VGS = 0, Pulse test
VDS = 5 V, ID = 10 µA
Gate to source cutoff voltage
Forward transfer admittance
Input capacitance
VGS(off)
|yfs|
–2.5
—
20
—
mS
pF
VDS = 5 V, VGS = 0, f = 1 kHz
VDS = 5 V, VGS = 0, f = 1 MHz
Ciss
—
Notes: 1. The 2SK1070 is grouped by IDSS as follows.
Grade
Mark
IDSS
C
D
E
PIC
PID
PIE
12 to 22
18 to 30
27 to 40
Main Characteristics
Maximum Channel Dissipation Curve
Typical Output Characteristics
20
16
12
8
150
100
50
4
0
2
4
6
8
10
0
50
100
150
Ambient Temperature Ta (ºC)
Drain to Source Voltage VDS (V)
Forward Transfer Admittance
vs. Drain Current
Typical Transfer Characteristics
20
16
12
8
100
VDS = 5 V
VDS = 5 V
f = 1 kHz
10
1.0
0.1
4
0
–1.25 –1.0 –0.75 –0.5 –0.25
0
0.1
1.0
10
100
Gate to Source Voltage VGS (V)
Drain Current ID (mA)
Rev.2.00, Mar.14.2005, page 2 of 4
2SK1070
Forward Transfer Admittance
vs. Gate to Source Voltage
Gate Cutoff Current
vs. Gate to Source Voltage
50
40
30
20
10
0
1,000
100
10
VDS = 5 V
f = 1 kHz
VDS = 0
1.0
0.1
–1.25 –1.0 –0.75 –0.5 –0.25
0
0
–10
–20
–30
–40
–50
Gate to Source Voltage VGS (V)
Gate to Source Voltage VGS (V)
Reverse Transfer Capacitance
vs. Drain to Source Voltage
Input Capacitance vs.
Drain to Source Voltage
100
50
100
50
f = 1 MHz
VGS = 0
f = 1 MHz
GS = 0
V
20
10
5
20
10
5
2
1
2
1
0.1 0.2
0.5 1.0
2
5
10
0.1 0.2
0.5
1.0
2
5
10
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Noise Figure vs.
Noise Figure vs. Frequency
Signal Source Resistance
12
10
8
12
10
8
VDS = 5 V
D = 1 mA
Rg = 1 kΩ
VDS = 5 V
ID = 1 mA
f = 1 kHz
I
6
6
4
4
2
2
0
10
0
10
100
1 k
10 k
100 k
100
1 k
10 k
100 k
Frequency f (Hz)
Signal Source Resistance Rg (Ω)
Rev.2.00, Mar.14.2005, page 3 of 4
2SK1070
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
0.011g
MPAK(T) / MPAK(T)V,
MPAK / MPAKV
SC-59A
PLSP0003ZB-A
D
A
Q
c
e
E
HE
L
LP
L1
Dimension in Millimeters
Reference
Symbol
A
A
A3
Min
1.0
0
Nom
Max
1.3
0.1
1.2
b
A
x
S
A
M
e
A1
A2
A3
1.0
1.1
0.25
0.42
0.4
b
0.35
0.1
0.5
A
A
2
1
A
b
1
c
0.13
0.11
0.15
c1
D
E
e
2.7
3.1
e1
1.35
1.5
0.95
2.8
1.65
S
HE
2.2
3.0
b
L
0.35
0.15
0.25
0.75
0.55
0.65
0.05
0.55
L
1
b
1
c1
I
1
LP
x
c
b
e
2
1
1.95
0.3
b
2
I
1
1.05
A-A Section
Pattern of terminal position areas
Q
Ordering Information
Part Name
Quantity
Shipping Container
2SK1070PICTL-E
2SK1070PIDTL-E
2SK1070PIETL-E
3000
φ178 mm reel, 8 mm Emboss Taping
φ178 mm reel, 8 mm Emboss Taping
φ178 mm reel, 8 mm Emboss Taping
3000
3000
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00, Mar.14.2005, page 4 of 4
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .2.0
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