2SJ76 [RENESAS]
Silicon P Channel MOS FET; 硅P沟道MOS场效应晶体管
| 型号： | 2SJ76 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon P Channel MOS FET |
| 文件： | 总6页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SJ76, 2SJ77, 2SJ78, 2SJ79
Silicon P Channel MOS FET
REJ03G0122-0200
(Previous: ADE-208-1179)
Rev.2.00
Sep 07, 2005
Description
High frequency and low frequency power amplifier, high speed power switching
Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216
Features
•
•
•
•
Suitable for direct mounting
High forward transfer admittance
Excellent frequency response
Enhancement-mode
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
1. Gate
2. Source (Flange)
3. Drain
G
1
2
3
S
Rev.2.00 Sep 07, 2005 page 1 of 5
2SJ76, 2SJ77, 2SJ78, 2SJ79
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
–140
–160
–180
–200
±15
Unit
Drain to source voltage
2SJ76
2SJ77
2SJ78
2SJ79
VDSX
V
Gate to source voltage
Drain current
VGSS
ID
V
mA
mA
W
–500
–500
1.75
Body to drain diode reverse drain current
Channel dissipation
IDR
Pch
Pch Note 1
30
W
Channel temperature
Tch
150
°C
°C
Storage temperature
Tstg
–45 to +150
Note: 1. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
—
Max
—
Unit
Test Conditions
Drain to source breakdown
voltage
2SJ76
2SJ77
2SJ78
2SJ79
V (BR) DSX –140
–160
V
V
VGS = 2 V, ID = –1 mA
—
—
–180
—
—
V
–200
—
—
V
Gate to source breakdown voltage
Gate to source cutoff voltage
Drain to source saturation voltage
Forward transfer admittance
Input capacitance
V (BR) GSS
VGS (on)
VDS (sat)
|yfs|
±15
–0.2
—
—
—
V
IG = ±10 µA, VDS = 0
—
–1.5
–2.0
—
V
ID = –10 mA, VDS = –10 V Note 2
ID = –10 mA, VGS = 0 Note 2
ID = –10 mA, VDS = –20 V Note 2
—
V
20
35
120
4.8
mS
pF
pF
Ciss
—
—
VDS = –10 V, ID = –10 mA,
f = 1 MHz
Reverse transfer capacitance
Note: 2. Pulse test
Crss
—
—
Rev.2.00 Sep 07, 2005 page 2 of 5
2SJ76, 2SJ77, 2SJ78, 2SJ79
Main Characteristics
Power vs. Temperature Derating
Typical Output Characteristics
–500
–400
–300
–200
–100
0
60
40
20
–4.5
Tc = 25°C
–4.0
–3.5
–3.0
–2.5
–2.0
–1.5
–1.0
V
GS
= –0.5 V
0
0
50
100
150
0
–4
–8
–12
–16
–20
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
VDS = –20 V
–500
–400
–300
–200
–100
0
–50
–40
–30
–20
–10
0
–1.0
Tc = 25°C
–0.9
–0.8
–0.7
–0.6
Tc = –25°C
25°C
75°C
–0.5
–0.4
–0.3
–0.2
V
GS
= –0.1 V
0
–20
–40
–60
–80
–100
0
–1
–2
–3
–4
–5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Forward Transfer Admittance vs.
Drain Current
Typical Transfer Characteristics
VDS = –20 V
–100
–80
–60
–40
–20
0
200
100
50
Tc = –25°C
20
10
5
25°C
75°C
Tc = 25°C
VDS = –20 V
2
–2
–5 –10 –20
–50 –100 –200
0
–0.4
–0.8
–1.2
–1.6
–2.0
Drain Current ID (mA)
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 5
2SJ76, 2SJ77, 2SJ78, 2SJ79
Forward Transfer Admittance vs.
Frequency
500
100
10
1
Tc = 25°C
V
DS = –20 V
ID = –10 mA
0.1
0.05
5 k10 k
100 k
1 M
10 M 50 M
Frequency f (Hz)
Rev.2.00 Sep 07, 2005 page 4 of 5
2SJ76, 2SJ77, 2SJ78, 2SJ79
Package Dimensions
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AC-A
Package Name
MASS[Typ.]
1.8g
Unit: mm
TO-220AB / TO-220ABV
11.5 Max
10.16 0.2
4.44 0.2
9.5
8.0
+0.1
–0.08
1.26 0.15
φ 3.6
2.7 Max
1.5 Max
0.76 0.1
2.54 0.5
0.5 0.1
2.54 0.5
Ordering Information
Part Name
Quantity
Shipping Container
2SJ76-E
2SJ77-E
2SJ78-E
2SJ79-E
500 pcs
500 pcs
Box (Sack)
Box (Sack)
Box (Sack)
Box (Sack)
500 pcs
500 pcs
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 5 of 5
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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