2SJ624
更新时间:2024-09-18 18:39:14
品牌:RENESAS
描述:4500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-96, 3 PIN
2SJ624 概述
4500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-96, 3 PIN 小信号场效应晶体管
2SJ624 规格参数
是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Not Recommended | 零件包装代码: | SC-96 |
包装说明: | SC-96, 3 PIN | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.14 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (Abs) (ID): | 4.5 A | 最大漏极电流 (ID): | 4.5 A |
最大漏源导通电阻: | 0.071 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 1.25 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
2SJ624 数据手册
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April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ624
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The 2SJ624 is a switching device which can be driven directly
by a 1.8 V power source.
+0.1
–0.05
0.4
+0.1
–0.06
0.16
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
3
0 to 0.1
FEATURES
• 1.8 V drive available
1
2
• Low on-state resistance
0.65
0.95 0.95
1.9
RDS(on)1 = 54 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A)
RDS(on)2 = 71 mΩ MAX. (VGS = –2.5 V, ID = –2.5 A)
RDS(on)3 = 108 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A)
0.9 to 1.1
2.9 ±0.2
1
: Gate
ORDERING INFORMATION
2 : Source
3 : Drain
PART NUMBER
PACKAGE
2SJ624
SC-96 (Mini Mold Thin Type)
Marking: XH
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
EQUIVALENT CIRCUIT
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
–20
m8.0
V
V
Drain
m4.5
A
Body
Diode
m18
A
Gate
0.2
W
W
°C
°C
Total Power Dissipation Note2
Gate
Protection
Diode
PT2
1.25
Channel Temperature
Tch
150
Source
Storage Temperature
Tstg
–55 to +150
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
Date Published June 2002 NS CP(K)
Printed in Japan
D15890EJ1V0DS00 (1st edition)
2002
©
2SJ624
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
IDSS
TEST CONDITIONS
VDS = –20 V, VGS = 0 V
MIN. TYP. MAX. UNIT
–10
m10
µA
µA
V
IGSS
VGS = m8.0 V, VDS = 0 V
VDS = –10 V, ID = –1.0 mA
VDS = –10 V, ID = –2.5 A
VGS = –4.5 V, ID = –2.5 A
VGS = –2.5 V, ID = –2.5 A
VGS = –1.8 V, ID = –1.5 A
VDS = –10 V
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
–0.45 –0.75 –1.5
Forward Transfer Admittance
Drain to Source On-state Resistance
5.0
9.5
43
S
54
71
mΩ
mΩ
mΩ
pF
pF
pF
ns
53
65
108
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
813
165
69
Coss
VGS = 0 V
Crss
f = 1.0 MHz
td(on)
VDD = –10 V, ID = –2.5 A
VGS = –4.0 V
14
tr
42
ns
Turn-off Delay Time
Fall Time
td(off)
RG = 10 Ω
80
ns
tf
92
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
QG
VDD = –16 V
8.1
1.3
2.8
0.90
nC
nC
nC
V
QGS
VGS = –4.0 V
ID = –4.5 A
QGD
VF(S-D)
IF = 4.5 A, VGS = 0 V
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
V
V
GS (−)
D.U.T.
D.U.T.
90%
VGS
V
GS
Wave Form
10%
I
G
= −2 mA
R
L
0
R
L
DS (−)
RG
PG.
V
DD
50 Ω
PG.
V
DD
90%
90%
VDS
0
10% 10%
V
DS
Wave Form
VGS (−)
0
td(on)
t
r
td(off)
tf
τ
ton
toff
τ = 1
µs
Duty Cycle ≤ 1%
2
Data Sheet D15890EJ1V0DS
2SJ624
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
100
80
60
40
20
0
1.5
1.25
1
0.75
0.5
0.25
0
Mounted on FR-4 board of
50 cm2 x 1.1 mm
0
25
50
75
100 125 150 175
0
25
50
75 100 125 150 175
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
RDS(on) Limited
-100
-10
(VGS = −4.5 V)
ID(pulse)
PW = 1 ms
ID(DC)
-1
10 ms
100 ms
5 s
-0.1
-0.01
Single Pulse
Mounted on FR-4 board of
50 cm2 x 1.1 mm
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
Single Pulse
Without board
Mounted on FR-4 board of
50 cm2 x 1.1 mm
1
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
3
Data Sheet D15890EJ1V0DS
2SJ624
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
-20
-16
-12
-8
-100
-10
Pulsed
VDS = −10 V
Pulsed
VGS = −4.5 V
-1
−2.5 V
TA = 125°C
75°C
-0.1
25°C
−25°C
-0.01
-0.001
-0.0001
−1.8 V
-4
0
0
-0.2 -0.4 -0.6 -0.8
-1
-1.2 -1.4
0
-0.4 -0.8 -1.2 -1.6
-2
-2.4
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
-1
-0.8
-0.6
-0.4
-0.2
100
10
1
VDS = −10 V
Pulsed
VDS = −10 V
ID = −1.0 mA
TA = −25°C
25°C
75°C
125°C
0.1
-50
0
50
100
150
-0.01
-0.1
-1
-10
ID - Drain Current - A
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
100
80
60
40
20
Pulsed
VGS = −1.8 V, ID = −1.5 A
Pulsed
80
60
40
20
ID = −2.5 A
VGS = −2.5 V, ID = −2.5 A
VGS = −4.5 V, ID = −2.5 A
-50
0
50
100
150
0
-2
-4
-6
-8
Tch - Channel Temperature - °C
VGS - Gate to Source Voltage - V
4
Data Sheet D15890EJ1V0DS
2SJ624
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
120
VGS = −2.5 V
Pulsed
VGS = −4.5 V
Pulsed
TA = 125°C
80
60
40
20
0
100
80
TA = 125°C
75°C
25°C
75°C
25°C
60
−25°C
−25°C
40
20
-0.01
-0.1
-1
-10
-100
-0.01
-0.1
-1
-10
-100
ID - Drain Current - A
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
SWITCHING CHARACTERISTICS
120
1000
100
10
VDD = −10 V
VGS = −1.8 V
Pulsed
VGS = −4.0 V
RG = 10 Ω
75°C
25°C
100
80
td(off)
tf
TA = 125°C
tr
td(on)
60
−25°C
40
1
-0.01
-0.1
-1
-10
-100
-0.1
-1
ID - Drain Current - A
-10
ID - Drain Current - A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
Pulsed
VGS = 0 V
f = 1.0 MHz
10
1
1000
100
10
Ciss
VGS = 0 V
Coss
Crss
0.1
0.01
-0.1
-1
-10
-100
0.4
0.6
0.8
1
1.2
1.4
VDS - Drain to Source Voltage - V
VF(S-D) - Source to Drain Voltage - V
5
Data Sheet D15890EJ1V0DS
2SJ624
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-6
ID = −4.5 A
-5
-4
-3
-2
-1
0
VDD = −16 V
−10 V
−4 V
0
2
4
6
8
10
QG - Gate Charge - nC
6
Data Sheet D15890EJ1V0DS
2SJ624
[MEMO]
7
Data Sheet D15890EJ1V0DS
2SJ624
•
The information in this document is current as of June, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
2SJ624 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
2SJ624-A | RENESAS | 4500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-96, 3 PIN | 获取价格 | |
2SJ624-L | RENESAS | 2SJ624-L | 获取价格 | |
2SJ624-L-AT | RENESAS | TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,4.5A I(D),SOT-346 | 获取价格 | |
2SJ624-T1B | RENESAS | 2SJ624-T1B | 获取价格 | |
2SJ624-T1B-A | RENESAS | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | 获取价格 | |
2SJ624-T1B-AT | RENESAS | 暂无描述 | 获取价格 | |
2SJ624-T2B-AT | RENESAS | TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,4.5A I(D),SOT-346 | 获取价格 | |
2SJ625 | NEC | MOS FIELD EFFECT TRANSISTOR | 获取价格 | |
2SJ625-L-A | RENESAS | TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,3A I(D),SOT-346 | 获取价格 | |
2SJ625-L-AT | RENESAS | TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,3A I(D),SOT-346 | 获取价格 |
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