2SC5702 [RENESAS]

Silicon NPN Epitaxial High Frequency Amplifier / Oscillator; NPN硅外延高频放大器/振荡器
2SC5702
型号: 2SC5702
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Silicon NPN Epitaxial High Frequency Amplifier / Oscillator
NPN硅外延高频放大器/振荡器

振荡器 放大器
文件: 总15页 (文件大小:272K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SC5702  
Silicon NPN Epitaxial  
High Frequency Amplifier / Oscillator  
REJ03G0752-0200  
(Previous ADE-208-1414)  
Rev.2.00  
Aug.10.2005  
Features  
High gain bandwidth product  
fT = 8 GHz typ.  
High power gain and low noise figure ;  
PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz  
Outline  
RENESAS Package code: PUSF0003ZA-A  
(Package name: MFPAK R  
)
3
. Emitter  
2. Base  
3. Collector  
Note: Marking is “ZS-”.  
trademark of Renesas Technology Corp.  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Collector to base voltage  
Collector to emitter volta
Emitter to base volta
Collector current  
bol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
15  
6
V
1.5  
50  
V
mA  
mW  
°C  
°C  
Collector power dissipatio
Junction temperature  
Pc  
80  
Tj  
150  
Storage temperature  
Tstg  
–55 to +150  
Rev.2.00 Aug 10, 2005 page 1 of 14  
2SC5702  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
V(BR)CBO  
ICBO  
Min  
Typ  
Max  
Unit  
V
Test Conditions  
IC = 10 µA, IE = 0  
VCB = 10 V, IE = 0  
Collector to base breakdown voltage  
Collector cutoff current  
15  
18.5  
1
1
µA  
Collector cutoff current  
ICEO  
mA VCE = 4 V, RBE = ∞  
Emitter cutoff current  
IEBO  
10  
160  
1.2  
mA VEB = 1.5V, IC = 0  
DC current transfer ratio  
Collector output capacitance  
hFE  
80  
120  
VCE = 1 V, IC = 5 mA  
Cob  
0.85  
pF  
VCB = 1 V, IE = 0  
f = 1 MHz  
Gain bandwidth product  
Power gain  
fT  
6.5  
11  
8.0  
13  
GHz VCE = 1 V, IC = 5 mA  
f = 1 MHz  
PG  
NF  
dB  
VCE = 1 V, IC = 5 mA  
f = 900 MHz  
Noise figure  
1.05  
1.9  
dB  
VCE = 1 V, IC = 5 mA  
f = 900 MHz  
Rev.2.00 Aug 10, 2005 page 2 of 14  
2SC5702  
Main Characteristics  
Collecter Voltage vs.  
Collecter to Emitter Voltege  
Maximum Collector Dissipation Curve  
160  
120  
80  
50  
40  
460 µA  
410 µA  
360 µA  
310 µA  
260 µA  
210 µA  
30  
20  
160 µA  
110 µA  
60 µA  
40  
10  
0
I
B
=10 µA  
1
0
50  
100  
150  
200  
3
4
2
5
Ambient Temperature Ta (°C)  
Citter Voltege VCE (V)  
Collecter Voltage vs.  
Base to Emitter Voltege  
Ratio vs.  
ent  
0  
50  
40  
30  
20  
10  
0
VCE = 1 V  
40  
0
0
0.2  
10  
20  
1
2
5
50  
100  
Ba
Collector Current IC (mA)  
Collector vs.  
Collector e  
Reverse Transfer capacitance vs.  
Collector To Base Voltage  
1.4  
1.2  
1.0  
0.8  
1.0  
0.8  
0.6  
0.4  
E: Guard pin  
f = 1 MHz  
IE = 0  
f = 1 MHz  
0.6  
0.4  
0.2  
0
0
1
10  
(V)  
0
1
10  
(V)  
Collector to Base Voltage  
V
Collector to Base Voltage  
V
CB  
CB  
Rev.2.00 Aug 10, 2005 page 3 of 14  
2SC5702  
Collector Input Capacitance vs.  
Emitter To Base Voltage  
Power Gain vs. Collector Current  
1.0  
0.8  
0.6  
0.4  
20  
16  
12  
8
f = 1 MHz  
f = 900 MHz  
VCE = 3 V  
2 V  
1 V  
0.2  
0
4
0
1
10  
20  
0.1  
10  
1
2
5
50 100  
Emitter to Base Voltage VEB (V)  
Colletor Current IC (mA)  
Gais. Collector Currnet  
Noise Figure vs. Collector Current  
f = 900 MHz  
5.0  
4.0  
3.0  
2.0  
V
= 3 V  
CE  
2 V  
1 V  
4
0
1.0  
0.0  
10  
20  
1
2
5
50 100  
1
2
5
Collector Current IC (mA)  
Collecto
S21 Paraent  
20  
16  
12  
8
V
= 1 V  
CE  
f = 1 GHz  
4
0
10  
20  
1
2
5
50 100  
Collector Current IC (mA)  
Rev.2.00 Aug 10, 2005 page 4 of 14  
2SC5702  
S11 Parameter vs. Frequency  
S21 Paramter vs. Frequency  
Scale: 10 / div.  
1
90°  
.8  
1.5  
60°  
.6  
120°  
2
.4  
3
30°  
4
150°  
.2  
5
10  
.2  
.4 .6 .8 1  
1.5 2 3 4 5 10  
0
180°  
0°  
10  
5  
4  
.2  
30°  
150°  
3  
.4  
2  
60°  
120°  
.6  
1.5  
.8  
1  
90°  
Condi
= 1 V, Zo = 50  
V
= 1 V, Zo = 50 Ω  
Condition :  
CE  
100 to 2000 MHz (100 MHz STEP)  
1000 MHz STEP)  
(I = 5mA)  
C
(I = 20mA)  
C
er vs. Frequency  
S12 Parameter vs. Frequency  
Scale: 10 / div.  
1
90°  
.8  
1.5  
6  
60°  
120°  
2
3
4
150°  
.2  
0
5
10  
.2  
.4 .6 .8 1  
1.5 2 3 4 5 10  
180°  
10  
5  
4  
.2  
°  
150°  
3  
.4  
2  
120°  
.6  
1.5  
.8  
1  
90
Condition :  
Condition : V  
CE  
= 1 V, Zo = 50 Ω  
V
= 1 VZo = 50 Ω  
CE  
100 to 2000 MHz (100 MHz STEP)  
(I = 5mA)  
C
100 to 2000 MHz (100 MHz STEP)  
(I = 5mA)  
C
(I = 20mA)  
C
(I = 20mA)  
C
Rev.2.00 Aug 10, 2005 page 5 of 14  
2SC5702  
S21 Paramter vs. Frequency  
S11 Parameter vs. Frequency  
Scale: 10 / div.  
1
90°  
.8  
1.5  
60°  
.6  
120°  
2
.4  
3
30°  
4
150°  
.2  
5
10  
.2  
.4 .6 .8 1  
1.5 2 3 4 5 10  
0
180°  
0°  
10  
5  
4  
.2  
30°  
150°  
3  
.4  
2  
60°  
120°  
.6  
1.5  
.8  
1  
90°  
Condition :  
Condition V  
= 2 V, Zo = 50  
V
= 2 V, Zo = 50 Ω  
CE  
CE  
100 to 2000 MHz (100 MHz STEP)  
100 to Hz (100 MHz STEP)  
5mA)  
(I = 5mA)  
C
mA)  
(I = 20mA)  
C
S12 Parameter vs. Frequency  
s. Frequency  
Scale: 10 / div.  
1
90°  
1.5  
60°  
120°  
2
3
150°  
4
5
0
10  
.2  
.4 .6 .8 1  
1.5 2 3 4 5 10  
180°  
10  
5  
4  
.2  
150°  
3  
.4  
2  
120°  
.6  
1.5  
.8  
1  
Condition :  
V
0 Ω  
Condition :V  
= 2 V, Zo = 50 Ω  
CE  
100 to 2000 MHz (100 MHz STEP)  
C
100 to 2000 MHz z STEP)  
(I = 5mA)  
C
(I = 5mA
C
(I = 20mA)  
C
(I = 20mA)  
C
Rev.2.00 Aug 10, 2005 page 6 of 14  
2SC5702  
S11 Parameter vs. Frequency  
S21 Paramter vs. Frequency  
Scale: 10 / div.  
1
90°  
.8  
1.5  
60°  
.6  
120°  
2
.4  
3
30°  
4
150°  
.2  
5
10  
.2  
.4 .6 .8 1  
1.5  
2
3 4  
5
10  
0
180°  
0°  
10  
5  
4  
.2  
30°  
150°  
3  
.4  
2  
60°  
120°  
.6  
1.5  
.8  
1  
90°  
Condition
V
= 3 V, Zo = 50  
Condition :  
V
= 3 V, Zo = 50 Ω  
CE  
100 to Hz (100 MHz STEP)  
CE  
100 to 2000 MHz (100 MHz STEP)  
(I = 5mA)  
C
5mA)  
A)  
(I = 20mA)  
C
S12 Parameter vs. Frequency  
Frequency  
Scale: 10 / div.  
1
90°  
1.5  
60°  
120°  
2
3
150°  
4
0
5
10  
.2  
.4 .6 .8 1  
1.5  
2
3 4  
5
10  
180°  
10  
5  
4  
.2  
150°  
3  
.4  
2  
120°  
.6  
1.5  
.8  
1  
Condition :  
V
0 Ω  
Condition :  
100 to 2000 MHz (100 MHz STEP)  
V
= 3 V, Zo = 50  
C
CE  
100 to 2000 MHz z STEP)  
(I = 5mA
C
(I = 5mA)  
C
(I = 20mA)  
C
(I = 20mA)  
C
Rev.2.00 Aug 10, 2005 page 7 of 14  
2SC5702  
Sparameter  
(VCE = 1V, IC = 5mA, Zo = 50)  
S11  
S21  
S12  
S22  
f (MHz)  
100  
MAG  
ANG  
-28.2  
MAG  
14.18  
12.19  
10.17  
8.43  
7.15  
6.15  
5.40  
4.84  
4.32  
3.94  
3.60  
3.33  
3.11  
2.87  
2.75  
2.57  
2.44  
2.34  
2.21  
2.13  
ANG  
159.9  
141.4  
127.5  
117.9  
110.6  
105.0  
100.2  
96.4  
MAG  
ANG  
74.2  
61.4  
52.8  
48.9  
46.8  
45.8  
46.0  
46.7  
47.6  
48.7  
49.5  
9  
8.6  
MAG  
0.927  
0.789  
0.644  
0.532  
0.447  
0.378  
0.327  
0.285  
0.250  
0.223  
0.200  
0.181  
0.163  
0.151  
0.138  
130  
0.124  
0.119  
0.116  
0.114  
ANG  
-20.7  
0.832  
0.723  
0.636  
0.559  
0.513  
0.473  
0.462  
0.443  
0.432  
0.435  
0.420  
0.438  
0.428  
0.442  
0.444  
0.448  
0.464  
0.460  
0.474  
0.481  
0.0347  
0.0624  
0.0806  
0.0920  
0.1001  
0.1065  
0.1124  
0.1182  
0.1236  
0.1294  
0.1351  
0.1410  
0.1471  
0.153
0.
200  
-55.3  
-38.8  
300  
-78.0  
-52.3  
400  
-95.2  
-61.8  
500  
-110.1  
-121.4  
-132.4  
-139.7  
-148.1  
-153.9  
-160.5  
-165.4  
-168.8  
-175.3  
-177.1  
177.3  
176.0  
172.7  
170.1  
168.3  
-69.1  
600  
-75.3  
700  
-79.8  
800  
-84.6  
900  
92.6  
-89.4  
1000  
1100  
1200  
1300  
1400  
1500  
1600  
1700  
1800  
1900  
2000  
89.6  
-93.3  
87.2  
-97.4  
84.5  
-102.3  
-107.4  
-111.4  
-117.3  
-121.8  
-128.5  
-135.6  
-142.0  
-148.5  
82.2  
80.0  
78.0  
76.1  
73.9  
72.7  
7
Rev.2.00 Aug 10, 2005 page 8 of 14  
2SC5702  
Sparameter  
(VCE = 1V, IC = 20mA, Zo = 50)  
S11  
S21  
S12  
S22  
f (MHz)  
100  
MAG  
ANG  
-68.4  
MAG  
30.97  
20.56  
14.57  
11.16  
9.02  
7.58  
6.52  
5.75  
5.09  
4.62  
4.22  
3.87  
3.62  
3.34  
3.16  
2.98  
2.81  
2.69  
2.54  
2.45  
ANG  
140.9  
119.2  
107.9  
101.6  
97.1  
93.7  
90.8  
88.3  
86.1  
84.0  
82.5  
80.5  
79.0  
77.7  
75.6  
74.5  
72.8  
72.0  
7
MAG  
ANG  
65.2  
57.4  
58.2  
60.5  
63.1  
65.0  
66.5  
67.7  
68.5  
69.5  
69.7  
2  
0.2  
MAG  
0.735  
0.489  
0.350  
0.276  
0.231  
0.201  
0.182  
0.170  
0.164  
0.158  
0.157  
0.158  
0.158  
0.162  
0.164  
168  
0.175  
0.181  
0.189  
0.195  
ANG  
-45.4  
0.534  
0.467  
0.451  
0.434  
0.438  
0.430  
0.441  
0.442  
0.451  
0.456  
0.452  
0.470  
0.462  
0.485  
0.483  
0.494  
0.505  
0.503  
0.525  
0.523  
0.0258  
0.0390  
0.0490  
0.0581  
0.0673  
0.0772  
0.0872  
0.0974  
0.1081  
0.1184  
0.1291  
0.1395  
0.1504  
0.160
0.
200  
-111.9  
-135.2  
-149.5  
-159.1  
-165.9  
-172.5  
-175.8  
178.4  
175.8  
171.2  
169.0  
166.2  
162.5  
162.0  
158.4  
157.3  
155.6  
152.6  
152.4  
-73.4  
300  
-91.3  
400  
-104.5  
-115.5  
-125.9  
-135.2  
-144.0  
-152.6  
-160.2  
-166.8  
-173.0  
-179.2  
176.1  
171.1  
167.2  
164.0  
160.4  
157.1  
154.1  
500  
600  
700  
800  
900  
1000  
1100  
1200  
1300  
1400  
1500  
1600  
1700  
1800  
1900  
2000  
Rev.2.00 Aug 10, 2005 page 9 of 14  
2SC5702  
Sparameter  
(VCE = 2V, IC = 5mA, Zo = 50)  
S11  
S21  
S12  
S22  
f (MHz)  
100  
MAG  
ANG  
-25.5  
MAG  
14.31  
12.50  
10.58  
8.85  
7.58  
6.56  
5.77  
5.17  
4.62  
4.22  
3.87  
3.57  
3.34  
3.08  
2.94  
2.75  
2.63  
2.50  
2.38  
2.28  
ANG  
161.2  
143.5  
129.9  
120.2  
112.7  
106.9  
102.1  
98.1  
MAG  
ANG  
75.8  
63.3  
55.0  
51.0  
48.7  
47.7  
48.0  
48.5  
49.2  
50.0  
51.2  
3  
0.2  
MAG  
0.938  
0.813  
0.674  
0.563  
0.476  
0.405  
0.351  
0.307  
0.269  
0.239  
0.215  
0.192  
0.171  
0.156  
0.139  
128  
0.117  
0.106  
0.097  
0.090  
ANG  
-18.2  
-34.5  
-46.5  
-54.9  
-61.1  
-66.1  
-69.5  
-72.7  
-76.1  
-78.3  
-80.7  
-84.0  
-86.6  
-88.9  
-92.9  
-95.6  
-100.4  
-105.7  
-112.2  
-118.3  
0.837  
0.739  
0.646  
0.565  
0.513  
0.466  
0.444  
0.429  
0.412  
0.411  
0.395  
0.410  
0.401  
0.413  
0.417  
0.415  
0.431  
0.426  
0.447  
0.450  
0.0306  
0.0559  
0.0736  
0.0848  
0.0928  
0.0996  
0.1055  
0.1106  
0.1162  
0.1214  
0.1276  
0.1331  
0.1387  
0.144
0.
200  
-50.1  
300  
-72.1  
400  
-88.6  
500  
-103.4  
-114.0  
-125.7  
-133.3  
-142.2  
-148.8  
-155.5  
-161.6  
-165.3  
-172.1  
-174.3  
-179.2  
177.8  
175.2  
171.4  
169.9  
600  
700  
800  
900  
94.1  
1000  
1100  
1200  
1300  
1400  
1500  
1600  
1700  
1800  
1900  
2000  
91.1  
88.6  
85.7  
83.6  
81.4  
79.1  
77.4  
75.0  
73.8  
7
Rev.2.00 Aug 10, 2005 page 10 of 14  
2SC5702  
Sparameter  
(VCE = 2V, IC = 20mA, Zo = 50)  
S11  
S21  
S12  
S22  
f (MHz)  
100  
MAG  
ANG  
-58.6  
MAG  
32.28  
22.20  
15.97  
12.32  
9.97  
8.41  
7.23  
6.39  
5.66  
5.13  
4.69  
4.29  
4.01  
3.70  
3.50  
3.30  
3.10  
2.97  
2.81  
2.71  
ANG  
143.9  
121.9  
110.2  
103.5  
98.7  
95.2  
92.0  
89.5  
87.1  
85.0  
83.4  
81.5  
79.9  
78.6  
76.8  
75.4  
73.6  
72.7  
7
MAG  
ANG  
67.8  
59.6  
60.1  
61.7  
63.8  
65.6  
67.1  
68.5  
69.2  
70.2  
70.6  
1  
1.1  
MAG  
0.777  
0.527  
0.373  
0.283  
0.226  
0.184  
0.155  
0.133  
0.117  
0.104  
0.097  
0.092  
0.091  
0.092  
0.093  
097  
0.103  
0.109  
0.117  
0.125  
ANG  
-38.8  
0.548  
0.451  
0.415  
0.390  
0.392  
0.382  
0.387  
0.387  
0.390  
0.399  
0.400  
0.412  
0.409  
0.433  
0.426  
0.435  
0.454  
0.446  
0.475  
0.473  
0.0231  
0.0363  
0.0464  
0.0545  
0.0632  
0.0726  
0.0823  
0.0914  
0.1019  
0.1114  
0.1213  
0.1309  
0.1411  
0.151
0.
200  
-99.9  
-62.6  
300  
-125.6  
-141.4  
-152.5  
-160.9  
-168.1  
-172.8  
-178.6  
178.2  
172.6  
170.4  
167.8  
163.6  
162.4  
158.8  
157.9  
155.5  
153.5  
152.7  
-76.9  
400  
-86.7  
500  
-95.1  
600  
-102.9  
-110.3  
-118.3  
-127.6  
-136.9  
-146.4  
-156.2  
-166.0  
-174.7  
176.8  
170.5  
165.0  
159.1  
155.2  
150.3  
700  
800  
900  
1000  
1100  
1200  
1300  
1400  
1500  
1600  
1700  
1800  
1900  
2000  
Rev.2.00 Aug 10, 2005 page 11 of 14  
2SC5702  
Sparameter  
(VCE = 3V, IC = 5mA, Zo = 50)  
S11  
S21  
S12  
S22  
f (MHz)  
100  
MAG  
ANG  
-24.1  
MAG  
14.25  
12.56  
10.71  
9.03  
7.75  
6.72  
5.92  
5.31  
4.75  
4.34  
3.97  
3.69  
3.44  
3.18  
3.03  
2.84  
2.70  
2.57  
2.44  
2.35  
ANG  
161.9  
144.7  
131.2  
121.3  
113.8  
108.0  
102.9  
99.0  
MAG  
ANG  
75.9  
64.3  
56.4  
52.0  
49.6  
48.6  
48.5  
49.0  
49.9  
50.7  
51.7  
2  
1.0  
MAG  
ANG  
-17.0  
-32.2  
-43.6  
-51.5  
-57.4  
-61.6  
-64.4  
-67.1  
-69.5  
-71.2  
-72.9  
-74.8  
-76.6  
-78.0  
-80.5  
-82.1  
-85.4  
-89.0  
-93.2  
-97.8  
0.846  
0.748  
0.656  
0.573  
0.516  
0.469  
0.442  
0.423  
0.404  
0.399  
0.382  
0.397  
0.385  
0.400  
0.401  
0.399  
0.415  
0.411  
0.430  
0.433  
0.0287  
0.0534  
0.0705  
0.0817  
0.0895  
0.0961  
0.1015  
0.1071  
0.1128  
0.1177  
0.1230  
0.1289  
0.1344  
0.140
0.
0.9420  
0.8245  
0.6904  
0.5802  
0.4932  
0.4224  
0.3680  
0.3229  
0.2856  
0.2535  
0.2285  
0.2052  
0.1839  
0.1680  
.1496  
381  
0.1251  
0.1122  
0.1018  
0.0914  
200  
-48.1  
300  
-69.0  
400  
-84.9  
500  
-99.3  
600  
-110.6  
-121.8  
-130.4  
-139.8  
-146.0  
-153.0  
-159.3  
-163.3  
-169.7  
-171.9  
-177.2  
179.5  
176.8  
173.0  
171.4  
700  
800  
900  
95.2  
1000  
1100  
1200  
1300  
1400  
1500  
1600  
1700  
1800  
1900  
2000  
92.0  
89.3  
86.5  
84.5  
81.8  
79.7  
77.8  
75.7  
74.4  
7
Rev.2.00 Aug 10, 2005 page 12 of 14  
2SC5702  
Sparameter  
(VCE = 3V, IC = 20mA, Zo = 50)  
S11  
S21  
S12  
S22  
f (MHz)  
100  
MAG  
ANG  
-54.4  
MAG  
32.56  
22.76  
16.50  
12.76  
10.36  
8.71  
7.52  
6.64  
5.87  
5.33  
4.87  
4.47  
4.16  
3.85  
3.64  
3.43  
3.24  
3.09  
2.93  
2.80  
ANG  
145.1  
123.2  
111.2  
104.4  
99.6  
95.8  
92.7  
90.0  
87.7  
85.4  
83.7  
81.8  
80.4  
78.9  
77.1  
75.7  
73.9  
73.2  
7
MAG  
ANG  
69.2  
60.3  
60.4  
62.0  
64.1  
65.9  
67.5  
68.4  
69.6  
70.1  
70.6  
1  
1.4  
MAG  
ANG  
-35.9  
0.564  
0.449  
0.408  
0.377  
0.370  
0.360  
0.365  
0.364  
0.366  
0.370  
0.373  
0.387  
0.379  
0.409  
0.399  
0.419  
0.427  
0.427  
0.446  
0.444  
0.0221  
0.0353  
0.0448  
0.0529  
0.0618  
0.0707  
0.0801  
0.0890  
0.0991  
0.1081  
0.1178  
0.1274  
0.1375  
0.147
0.
0.7913  
0.5457  
0.3871  
0.2929  
0.2311  
0.1861  
0.1524  
0.1274  
0.1061  
0.0893  
0.0768  
0.0685  
0.0630  
0.0603  
.0596  
631  
0.0681  
0.0757  
0.0829  
0.0914  
200  
-94.6  
-58.3  
300  
-119.2  
-136.7  
-148.4  
-157.6  
-165.0  
-170.4  
-176.1  
-179.9  
174.6  
172.5  
168.0  
164.7  
163.4  
159.1  
159.5  
156.2  
154.6  
153.5  
-71.0  
400  
-78.9  
500  
-85.4  
600  
-91.3  
700  
-96.6  
800  
-102.7  
-110.4  
-117.9  
-126.7  
-138.6  
-150.7  
-162.8  
-175.0  
174.3  
166.3  
157.4  
152.5  
146.9  
900  
1000  
1100  
1200  
1300  
1400  
1500  
1600  
1700  
1800  
1900  
2000  
Rev.2.00 Aug 10, 2005 page 13 of 14  
2SC5702  
Package Dimensions  
JEITA Package Code  
SC-89 Modified  
RENESAS Code  
Package Name  
MASS[Typ.]  
0.0016g  
PUSF0003ZA-A  
MFPAK / MFPAKV  
D
A
e
c
L
P
E
HE  
L
A
A
b
e
x
S
A
M
Dimension in Millimeters  
Reference  
Symbol  
Min  
0.55  
0
Nom  
Max  
0.6  
A
A1  
0.01  
0.59  
0.3  
A
2
1
A2  
0.55  
0.15  
A
b
0.22  
0.2  
b
1
c
0.1  
0.13  
0.11  
1.4  
0.15  
A
E
e
1.35  
0.7  
1.45  
0.9  
b
S
0.8  
0.45  
1.2  
b
1
I1  
c1  
H
E
1.15  
0.1  
1.25  
0.3  
L
0.2  
c
L
P
0.15  
0.45  
0.05  
0.35  
x
b
2
e
1
0.75  
A-A Section  
on areas  
I1  
0.5  
Ordering Information  
Part Name  
Shipping Container  
mm Reel, 8 mm Emboss Taping  
2SC5702ZS-TL-E  
9000  
Note: For some grades, prode contact the Renesas sales office to check the state of  
production before or
Rev.2.00 Aug 10, 2005 page 14 of 14  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary  
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technouct best suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other rights, belochnology Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-parthe use of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and on on products at the time of  
publication of these materials, and are subject to change by Renesas Technology Corp. without nr other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an authorized Rutor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other l
Please also pay attention to information published by Renesas Technology Corp. by vagy Corp. Semiconductor  
home page (http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including progorithms, please be sure to  
evaluate all information as a total system before making a final decision on the aenesas Technology Corp. assumes  
no responsibility for any damage, liability or other loss resulting from the inform
5. Renesas Technology Corp. semiconductors are not designed or manufacturnder circumstances in which human life  
is potentially at stake. Please contact Renesas Technology Corp. or an auistributor when considering the use of a  
product contained herein for any specific purposes, such as apparatus ol, aerospace, nuclear, or undersea repeater  
use.  
6. The prior written approval of Renesas Technology Corp. is necessarese materials.  
7. If these products or technologies are subject to the Japanese expunder a license from the Japanese government and  
cannot be imported into a country other than the approved dest
Any diversion or reexport contrary to the export control laws adestination is prohibited.  
8. Please contact Renesas Technology Corp. for further detaied therein.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/ormation.  
Renesas Technology America
450 Holger Way, San Jose, C
Tel: <1> (408) 382-7500, F
Renesas Technology
Dukes Meadow, Millboare, SL8 5FH, U.K.  
Tel: <44> (1628) 585-100
Renesas Technology Hong K
7th Floor, North Tower, World Finur City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong  
Tel: <852> 2265-6688, Fax: <852>
Renesas Technology Taiwan Co., Ltd
10th Floor, No.99, Fushing North Road, Tei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
Renesas Technology (Shanghai) Co., Ltd.  
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China  
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952  
Renesas Technology Singapore Pte. Ltd.  
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
Renesas Technology Korea Co., Ltd.  
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea  
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145  
Renesas Technology Malaysia Sdn. Bhd.  
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Tel: <603> 7955-9390, Fax: <603> 7955-9510  
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .3.0  

相关型号:

2SC5702ZS-TL-E

Silicon NPN Epitaxial High Frequency Amplifier / Oscillator
RENESAS

2SC5703

TOSHIBA Transistor Silicon NPN Epitaxial Type
TOSHIBA

2SC5703(TE85L)

TRANSISTOR,BJT,NPN,50V V(BR)CEO,4A I(C),SOT-346
TOSHIBA

2SC5703_06

Silicon NPN Epitaxial Type High-Speed Switching Applications
TOSHIBA
ETC

2SC5704-T3

TRANSISTOR | BJT | NPN | 3.3V V(BR)CEO | 35MA I(C) | TSOP
ETC

2SC5704-T3-FB

RF SMALL SIGNAL TRANSISTOR
RENESAS

2SC5704-T3FB

S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS, MINIMOLD PACKAGE-6
RENESAS

2SC5704-T3FB

RF Small Signal Bipolar Transistor, 0.035A I(C), S Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-6
NEC

2SC5704-T3FB-A

RF Small Signal Bipolar Transistor, 0.035A I(C), S Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-6
NEC

2SC5704FB

S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS, MINIMOLD PACKAGE-6
RENESAS