2SC5180-T1-FB [RENESAS]
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-4;
| 型号： | 2SC5180-T1-FB |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-4 |
| 文件： | 总9页 (文件大小：270K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 1010
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DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5180
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
4-PIN SUPER MINIMOLD
FEATURES
•
Low current consumption and high gain
S21e2 = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
S21e2 = 11 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
4-pin super minimold Package
•
ORDERING INFORMATION
Part Number
Quantity
2SC5180
50 pcs (Non reel)
3 kpcs/reel
• 8 mm wi
• Pin perforation side of the tape
2SC5180-T1
Remark To order evaluation samples, conta
The unit sample quantity is 50 p
ABSOLUTE MAXIMUM RATIN
Parameter
Collector to Base Voltage
Collector to Emitter Volta
Emitter to Base Voltage
Collector Current
gs
Unit
5
V
V
3
2
V
10
30
mA
mW
°C
°C
Note
Total Power Dissipation
Junction Temperature
Storage Temperature
Ptot
Tj
150
−65 to +150
Tstg
Note Free air
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10517EJ01V0DS (1st edition)
(Previous No. P12104EJ2V0DS00)
Date Published August 2004 CP(K)
The mark shows major revised points.
©
NEC Compound Semiconductor Devices, Ltd. 1994 , 2004
Printed in Japan
2SC5180
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
−
−
−
−
−
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
IEBO
VCB = 5 V, IE = 0 mA
100
100
140
nA
nA
−
VEB = 1 V, IC = 0 mA
VCE = 2 V, IC = 7 mA
Note 1
hFE
70
RF Characteristics
−
−
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
fT
VCE = 2 V, IC = 7 mA, f = 2.0 GHz
VCE = 1 V, IC = 5 mA, f = 2.0 GHz
VCE = 2 V, IC = 7 mA, f = 2.0 GHz
VCE = 1 V, IC = 5 mA, f = 2.0 GHz
VCE = 2 V, IC = 3 mA, f = 2.0 GHz
VCE = 1 V, IC = 3 mA, f = 2.0 GHz
VCB = 2 V, IE = 0 mA, f = 1.0
12
10
10
8.5
−
15.5
13
GHz
GHz
dB
fT
S21e2
S21e2
−
12
−
11
dB
NF
NF
1.5
1.5
0.3
2.0
2.0
0.5
dB
Noise Figure (2)
dB
Note 2
Reverse Transfer Capacitance
Cre
pF
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter g
hFE CLASSIFICATION
Rank
FB
T84
Marking
hFE Value
70 to 140
2
Data Sheet PU10517EJ01V0DS
2SC5180
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
200
100
0.5
0.4
0.3
0.2
f = 1 MHz
Free Air
30 mW
0.1
0
0
50
100
150
2.0
3.0
4.0
5.0
Ambient Temperature T
A
(˚C)
o Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
RENT vs.
MITTER VOLTAGE
50
40
30
20
10
10
5
VCE = 2 V
200
180
160
140
120
µ
µ
µ
µ
µ
A
A
A
A
A
100
µ
A
80
60
40
µ
A
A
A
µ
µ
IB = 20 A
µ
0
0
1.0
2.0
3.0
Base to
Collector to Emitter Voltage VCE (V)
DC CURRE
COLLECTOR NT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
500
18
16
14
12
10
8
f = 2 GHz
V
CE = 2 V
200
100
50
V
CE = 2 V
V
CE = 1 V
VCE = 1 V
20
10
6
4
1
1
2
5
10
20
(mA)
50
100
2
5
10
Collector Current I
C
Collector Current I (mA)
C
Remark The graphs indicate nominal characteristics.
3
Data Sheet PU10517EJ01V0DS
2SC5180
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE vs.
COLLECTOR CURRENT
14
12
10
8
4
3
2
f = 2 GHz
f = 2 GHz
VCE = 2 V
VCE = 1 V
VCE = 1 V
VCE = 2 V
1
0
6
4
1
2
10
1
2
5
10
20
100
5
Collector Current IC (mA)
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Coices Web site in a form
(S2P) that enables direct import to a microwave circuit simul
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/
4
Data Sheet PU10517EJ01V0DS
2SC5180
PACKAGE DIMENSIONS
4-PIN SUPER MINIMOLD (UNIT: mm)
2.1 0.2
1.25 0.1
tter
5
Data Sheet PU10517EJ01V0DS
2SC5180
•
The information in this document is current as of August, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
No part of this document may be copied or reproduced in any forany means without prior
written consent of NEC. NEC assumes no responsibility for any errors ear in this document.
NEC does not assume any liability for infringement of patents, copyrictual property rights of
third parties by or arising from the use of NEC semiconductor pument or any other
liability arising from the use of such products. No license, exgranted under any
patents, copyrights or other intellectual property rights of NE
•
•
•
•
•
Descriptions of circuits, software and other related infoprovided for illustrative
purposes in semiconductor product operation ane incorporation of these
circuits, software and information in the design shall be done under the full
responsibility of customer. NEC assumes no rincurred by customers or third
parties arising from the use of these circuits,
While NEC endeavours to enhance the quaEC semiconductor products, customers
agree and acknowledge that the possibot be eliminated entirely. To minimize
risks of damage to property or o persons arising from defects in NEC
semiconductor products, customent safety measures in their design, such as
redundancy, fire-containment,
NEC semiconductor productwing three quality grades:
"Standard", "Special" anquality grade applies only to semiconductor products
developed based on lity assurance program" for a specific application. The
recommended applproduct depend on its quality grade, as indicated below.
Customers must ceach semiconductor product before using it in a particular
application.
"Standard": Computers, nt, communications equipment, test and measurement equipment, audio
and visual equome electronic appliances, machine tools, personal electronic equipment
and industrial rob
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4-0110
6
Data Sheet PU10517EJ01V0DS
2SC5180
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
http://www.ncsd.necel.com/
E-mail: salesinfo@ml.ncsd.necel.com (sales and general)
techinfo@ml.ncsd.necel.com (technical)
Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
TEL: +852-3107-7303
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
TEL: +82-2-558-2120
FAX: +82-2-558-5209
FAX: +852-3107-7309
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
NEC Electronics (Europe) GmbH
http://www.ee.nec.de/
TEL: +49-211-6503-0 FAX: +49-211-6503-1327
California Eastern Laboratories, Inc.
TEL: +1-408-988-3500 FAX: +1-408-988-0279
http://www.cel.com/
0406
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