2SC4226 [RENESAS]
NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold; NPN硅射频晶体管NPN外延硅晶体管RF高频低噪声放大3针超级Minimold
| 型号： | 2SC4226 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold |
| 文件： | 总8页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PreliminaryData Sheet
2SC4226
NPN Silicon RF Transistor
R09DS0022EJ0200
Rev.2.00
Jun 29, 2011
NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold
DESCRIPTION
The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.
It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold
package.
FEATURES
•
•
•
Low noise : NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
High gain : ⏐S21e⏐2 = 9 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
3-pin super minimold package
<R>
ORDERING INFORMATION
Part Number
2SC4226
Order Number
2SC4226-A
Package
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
3-pin super
Minimold
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side of the tape
2SC4226-T1
2SC4226-T1-A
(Pb-Free)
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
20
12
V
3
100
V
mA
mW
°C
°C
Note
Total Power Dissipation
Junction Temperature
Storage Temperature
Ptot
150
Tj
150
Tstg
−65 to +150
Note Free air
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0022EJ0200 Rev.2.00
Jun 29, 2011
Page 1 of 6
2SC4226
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
IEBO
VCB = 10 V, IE = 0
−
−
−
−
1.0
1.0
μA
μA
–
VEB = 1 V, IC = 0
Note 1
hFE
VCE = 3 V, IC = 7 mA
40
110
250
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
fT
VCE = 3 V, IC = 7 mA
3.0
7
4.5
9
–
GHz
dB
⏐S21e⏐2
NF
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCB = 3 V, IE = 0, f = 1 MHz
–
−
1.2
0.7
2.5
1.5
dB
Note 2
Reverse Transfer Capacitance
Cre
−
pF
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
<R>
hFE CLASSIFICATION
Rank
R23/Y23
R23
R24/Y24
R24
R25/Y25
R25
Marking
hFE Value
40 to 80
70 to 140
125 to 250
R09DS0022EJ0200 Rev.2.00
Jun 29, 2011
Page 2 of 6
2SC4226
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
250
200
150
100
50
5
f = 1 MHz
Free Air
2
1
0.5
0.2
0.1
0
25
50
75
100
125
(˚C)
150
1
2
5
10
20
50
Ambient Temperature T
A
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
20
25
20
15
10
5
VCE = 3 V
μ
μ
μ
μ
μ
10
μ
μ
μ
0
0.5
1
0
5
10
Base to Emitter Voltage VBE (V)
Collector to Emitter Voltage VCE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
200
100
50
20
10
5
V
CE = 3 V
VCE = 3 V
f = 1 GHz
20
10
2
1
0.5
1
5
10
(mA)
50
0.5
1
5
10
50
Collector Current I
C
Collector Current I (mA)
C
Remark The graphs indicate nominal characteristics.
R09DS0022EJ0200 Rev.2.00
Jun 29, 2011
Page 3 of 6
2SC4226
INSERTION POWER GAIN
vs. FREQUENCY
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
24
20
16
12
8
15
10
5
V
CE = 3 V
V
CE = 3 V
f = 1 GHz
IC = 7 mA
4
0
0
0.5
0.1
0.2
0.5
1
2
5
1
5
10
50 100
Frequency f (GHz)
Collector Current I
C
(mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
6
5
4
3
2
1
V
CE = 3 V
f = 1 GHz
0
0.5
1
5
10
50 100
Collector Current I
C
(mA)
Remark The graphs indicate nominal characteristics.
R09DS0022EJ0200 Rev.2.00
Jun 29, 2011
Page 4 of 6
2SC4226
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of
the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www2.renesas.com/microwave/en/download.html
R09DS0022EJ0200 Rev.2.00
Jun 29, 2011
Page 5 of 6
2SC4226
PACKAGE DIMENSIONS
3-PIN SUPER MINIMOLD (UNIT: mm)
2.1 0.1
1.25 0.1
2
1
3
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
(EIAJ : SC-70)
R09DS0022EJ0200 Rev.2.00
Jun 29, 2011
Page 6 of 6
Revision History
2SC4226 Data Sheet
Description
Summary
Rev.
Date
Dec 2003
Page
−
−
Previous No. :PU10450EJ01V0DS
2.00
Jun 29, 2011
p.1
p.2
Modification of ORDERING INFORMATION
Modification of hFE CLASSIFICATION
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Colophon 1.1
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