2SC3583-T1B-A [RENESAS]
2SC3583-T1B-A;
| 型号： | 2SC3583-T1B-A |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 2SC3583-T1B-A |
| 文件： | 总10页 (文件大小：315K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Old Company Name in Catalogs and Other Documents
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Renesas Electronics document. We appreciate your understanding.
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April 1st, 2010
Renesas Electronics Corporation
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DATA SHEET
SILICON TRANSISTOR
2SC3583
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
PACKAGE DIMENSIONS
The 2SC3583 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. Low-
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This is achieved by direct nitride
passivated base surface process (DNP process) which is an NEC
proprietary new fabrication technique.
(Units: mm)
2.8±0.2
1.5
+0.1
−0.15
0.65
2
1
FEATURES
3
•
•
NF
Ga
1.2 dB TYP.
13 dB TYP.
@f = 1.0 GHz
@f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Marking
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
20
10
V
V
1.5
V
65
mA
mW
C
Total Power Dissipation
Junction Temperature
Storage Temperature
PT
200
PIN CONNECTIONS
1. Emitter
2. Base
Tj
150
Tstg
65 to +150
C
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
SYMBOL
MIN.
TYP.
MAX.
UNIT
A
TEST CONDITIONS
VCB = 10 V, IE = 0
ICBO
1.0
1.0
250
IEBO
A
VEB = 1 V, IE = 0
hFE *
fT
50
100
9
VCE = 8 V, IC = 20 mA
VCE = 8 V, IC = 20 mA
Gain Bandwidth Product
Feed-Back Capacitance
Insertion Power Gain
Maximum Available Gain
Noise Figure
GHz
pF
Cre **
0.35
13
0.9
VCB = 10 V, IE = 0, f = 1.0 MHz
2
S21e
11
dB
VCE = 8 V, IC = 20 mA, f = 1.0 GHz
VCE = 8 V, IC = 20 mA, f = 1.0 GHz
VCE = 8 V, IE = 7 mA, f = 1.0 GHz
MAG
NF
15
dB
1.2
2.5
dB
*
Pulse Measurement PW 350 s, Duty Cycle 2 %
** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.
hFE Classification
Class
Marking
hFE
R33/Q *
R33
R34/R *
R34
R35/S *
R35
50 to 100
80 to 160
125 to 250
* Old Specification / New Specification
Document No. P10360EJ4V1DS00 (4th edition)
Date Published March 1997 N
Printed in Japan
©
1984
2SC3583
TYPICAL CHARACTERISTICS (TA = 25 C)
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
3
2
f = 1.0 MHz
Free air
200
1
0.7
0.5
100
0.3
0.2
0
50
100
150
TA-Ambient Temperature-°C
0.1
1
2
3
5
7
10
20 30
VCB-Collector to Base Voltage-V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
INSERTION GAIN vs.
COLLECTOR CURRENT
200
15
VCE = 8 V
100
50
10
5
0
20
10
VCE = 8 V
f = 1.0 GHz
0.5
1
5
10
50
0.5
1
5
10
50 70
IC-Collector Current-mA
IC-Collector Current-mA
GAIN BANDWIDTH PRODUUT vs.
COLLECTOR CURRENT
INSERTION GAIN, MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
30
20
20
16
VCE = 8 V
VCE = 8 V
IC = 20 mA
MAG
|S21e|2
10
7
12
8
5
3
2
4
0
1
1
2
3
5
7
10
20 30
0.1
0.2 0.3
0.5 0.7. 1.0
2.0 3.0
IC-Collector Current-mA
f-Frequency-GHz
2
2SC3583
NOISE FIGURE vs.
COLLECTOR CURRENT
7
6
5
4
3
2
VCE = 8 V
f = 1.0 GHz
1
0
0.5
1
5
10
50 70
IC-Collector Current-mA
S-PARAMETER
VCE = 8.0 V, IC = 5.0 mA, ZO = 50
f (MHz)
200
S11
S11
45.3
S21
S21
138.7
114.2
102.3
90.1
S12
S12
66.2
61.6
61.6
61.2
61.3
60.8
60.0
59.8
59.1
58.9
S22
S22
0.728
0.490
0.343
0.253
0.202
0.176
0.176
0.179
0.186
0.211
12.107
8.097
6.260
4.623
4.004
3.250
3.021
2.575
2.520
2.183
0.036
0.065
0.079
0.090
0.101
0.125
0.144
0.160
0.188
0.202
0.825
0.675
0.582
0.529
0.500
0.470
0.448
0.427
0.406
0.386
21.6
26.6
29.0
28.6
30.1
31.4
33.4
34.8
37.5
44.5
400
74.5
600
93.2
800
110.1
131.1
148.9
162.8
173.9
163.3
151.1
1000
1200
1400
1600
1800
2000
83.6
75.8
69.4
63.4
58.9
53.4
VCE = 8.0 V, IC = 20 mA, ZO = 50
f (MHz)
200
S11
S11
66.8
S21
19.757
10.502
7.591
5.446
4.653
3.754
3.460
2.934
2.870
2.479
S21
116.9
98.8
91.1
82.0
77.6
71.6
66.5
61.9
58.2
53.4
S12
S12
62.6
70.6
74.6
73.2
72.1
72.1
70.1
69.6
66.3
64.0
S22
S22
22.5
23.8
24.3
23.2
24.2
26.4
29.9
32.2
34.3
42.1
0.366
0.194
0.124
0.077
0.063
0.065
0.074
0.108
0.116
0.134
0.033
0.055
0.072
0.095
0.107
0.135
0.164
0.178
0.205
0.221
0.587
0.485
0.453
0.419
0.413
0.392
0.369
0.347
0.333
0.312
400
88.9
600
104.3
132.0
156.4
179.5
168.0
147.0
137.6
131.2
800
1000
1200
1400
1600
1800
2000
3
2SC3583
S-PARAMETER
S11e, S22e-FREQUENCY
CONDITION VCE = 8 V
200 MHz Step
0.15
0.10
0.40
90
80
110
1.4
120
0.2
N
40
E
M
CO
E
30
)
A
E
+JX
R
––––
(
E
V
Z
I
T
1.0
I
20
2.0 GHz
IC = 20 mA
50
S22e
REACTANCE COMPONENT
R
––––
0.2
(
)
ZO
2.0 GHz
IC = 20 mA
0.4
0.1
IC = 5 mA
0.6
0.2 GHz
0.8
0.2
T
N
1.0
IC = 5 mA
0.2 GHz
O
P
S11e
O M
C
3 . 0
R
E
I V
G
0.6
0.7
9 − 0
S21e-FREQUENCY
CONDITION VCE = 8 V
S12e-FREQUENCY
CONDITION VCE = 8 V
2.0 GHz
60°
90°
90°
120°
120°
60°
IC = 20 mA
0.2 GHz
IC = 20 mA
150°
30°
150°
30°
IC = 5 mA
IC = 5 mA
S12e
0.2 GHz
0.2 GHz
180°
0° 180°
20
0°
0
4
8
12
16
0
0.04 0.08 0.12 0.16 0.20
S21e
−150°
−30°
−150°
−30°
−60°
−60°
−120°
−120°
−90°
−90°
4
2SC3583
[MEMO]
5
2SC3583
[MEMO]
6
2SC3583
[MEMO]
7
2SC3583
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
相关型号：
2SC3583-T2B
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SC-59, 3 PIN
NEC
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