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2SC3512TZ-E [RENESAS]

Silicon NPN Epitaxial; NPN硅外延

2SC3512TZ-E


元器件型号：	2SC3512TZ-E
生产厂家：	RENESAS TECHNOLOGY CORP
描述和应用：	Silicon NPN Epitaxial NPN硅外延晶体小信号双极晶体管射频小信号双极晶体管放大器
PDF文件：	总6页 (文件大小：158K)
下载文档：	下载PDF数据表文档文件
型号参数：2SC3512TZ-E参数

2SC3513

Silicon NPN Epitaxial

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19 KEXIN

2SC3513

Silicon NPN Epitaxial

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38 HITACHI

2SC3513

Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 11 V

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16 TYSEMI

2SC3513IS

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN

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0 HITACHI

2SC3513IS-01

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MPAK-3

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0 HITACHI

2SC3513IS-TL

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MPAK-3

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0 HITACHI

2SC3513IS-TR

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MPAK-3

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0 HITACHI

2SC3513IS-UL

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MPAK-3

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0 HITACHI

2SC3514

PNP/NPN SILICON EPITAXIAL TRANSISTOR

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58 ETC

2SC3514

Silicon NPN Power Transistor

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105 ISC

2SC3514Q

Transistor

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3 ISC

2SC3515

HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications

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15 TOSHIBA

2SC3515

High Voltage Control Applications

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11 KEXIN

2SC3515

NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS)

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57 TOSHIBA

2SC3515

High Voltage: VCBO = 300V , VCEO = 300V Low Saturation Voltage: VCE(sat) = 0.5V (max)

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9 TYSEMI

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