2SC2946(1)-AZ [RENESAS]

Small Signal Bipolar Transistor, 0.002A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, MP-3, 3 PIN;
2SC2946(1)-AZ
型号: 2SC2946(1)-AZ
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Small Signal Bipolar Transistor, 0.002A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, MP-3, 3 PIN

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DATA SHEET  
SILICON TRANSISTORS  
2SC2885, 2946, 2946(1)  
NPN SILICON EPITAXIAL TRANSISTOR  
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING  
The 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a small  
package (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DC  
converters and switching regulators.  
There are three types of transistors selectable according to the reliability requirments: 2SC2946 and 2946(1) for  
industrial use, 2SC2885 for general use. The 2SC2946(1) is produced with leads so as to enable mounting directly in  
a hybrid IC.  
QUALITY GRADES  
• Standard  
Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC  
Corporation to know the specification of quality grade on the devices and its recommended applications.  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (pulse)  
Base current (DC)  
Symbol  
VCBO  
Ratings  
330  
Unit  
V
VCEO  
200  
V
VEBO  
7.0  
V
IC(DC)  
2.0  
A
IC(pulse)*  
IB(DC)  
4.0  
A
1.0  
A
PT (Tc = 25°C)  
PT (Ta = 25°C)  
Tj  
Total power dissipation  
Total power dissipation  
Junction temperature  
Storage temperature  
15  
W
mW  
°C  
°C  
600  
150  
55 to +150  
Tstg  
* PW 300 µs, duty cycle 10%  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D16135EJ2V0DS00 (2nd edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©
2SC2885, 2946, 2946(1)  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
Parameter  
Symbol  
VCEO(SUS)  
VCEX(SUS)  
Conditions  
MIN.  
200  
200  
TYP.  
MAX.  
Unit  
V
IC = 1.0 A, IB = 0.1 A, L = 500 µH*  
Collector to emitter voltage  
Collector to emitter voltage  
IC = 1.0 A, IB1 = IB2 = 0.1 A*  
V
Ta = 125°C, L = 180 µH, clamped  
µA  
µA  
mA  
µA  
Collector cutoff current  
Collector cutoff current  
Collector cutoff current  
Emitter cutoff current  
DC current gain  
ICBO  
ICEX1  
ICEX2  
IEBO  
hFE1  
hFE2  
VCE(sat)  
VBE(sat)  
ton  
VCB = 250 V, IE = 0  
10  
10  
VCE = 250 V, VBE(OFF) = 1.5 V  
VCE = 250 V, VBE(OFF) = 1.5 V, Ta = 125°C  
VEB = 5.0 V, IC = 0  
1.0  
1.0  
160  
VCE = 5.0 V, IC = 0.1 A*  
VCE = 5.0 V, IC = 1.0 A*  
IC = 1.0 A, IB = 0.1 A*  
20  
15  
60  
Collector saturation voltage  
Base saturation voltage  
Turn-on time  
1.0  
1.5  
1.0  
2.0  
1.0  
V
V
IC = 1.0 A, IB = 0.1 A*  
IC = 1.0 A, RL = 100 Ω  
IB1 = IB2 = 0.1 A, VCC 100 V  
Refer to the test circuit.  
µs  
µs  
µs  
Storage time  
tstg  
Fall time  
tf  
* Pulse test PW 350 µs, duty cycle 2%  
hFE CLASSIFICATION  
Marking  
hFE1  
N
M
L
K
20 to 50  
30 to 70  
50 to 100  
80 to 160  
PACKAGE DRAWING (UNIT: mm)  
Electrode Connection  
1. Base  
2. Collector  
3. Emitter  
4. Collector (fin)  
2
Data Sheet D16135EJ2V0DS  
2SC2885, 2946, 2946(1)  
TYPICAL CHARACTERISTICS (Ta = 25°C)  
???  
Without  
heatsink  
Ambient Temperature Ta ( C)  
°
Collector to Emitter Voltage VCE (V)  
Case Temperature TC ( C)  
°
Pulse Width PW (ms)  
Pulse test  
Collector to Emitter Voltage VCE (V)  
Collector Current IC (mA)  
3
Data Sheet D16135EJ2V0DS  
2SC2885, 2946, 2946(1)  
ꢜꢈꢂꢑꢃꢇꢅꢃꢑꢅ  
ꢜꢈꢂꢑꢃꢇꢅꢃꢑꢅ  
µ
µ
µ
ꢀꢁꢂꢂꢃꢄꢅꢁꢆꢇꢀꢈꢆꢆꢃꢉꢅꢇꢇꢊꢇꢇꢋꢌꢍꢎ  
ꢀꢁꢂꢂꢃꢄꢅꢁꢆꢇꢀꢈꢆꢆꢃꢉꢅꢇꢇꢊꢇꢇꢋꢌꢍꢎ  
ꢀꢁꢂꢃꢄꢅꢂꢆꢇꢈꢈꢃꢂꢉꢊꢈꢈꢋꢌꢍꢎꢏꢈꢈꢌꢐꢌꢑꢏꢈꢈꢌꢓꢈꢈꢃꢊꢀꢃꢈꢈꢄꢂꢔꢄꢕꢂꢃ  
ꢏꢐꢑꢃꢇꢄꢈꢆꢆꢃꢉꢅ  
ꢝꢐꢞꢃꢛꢁꢆꢌ  
ꢀꢁꢂꢂꢃꢄꢅꢁꢆꢇꢄꢈꢆꢆꢃꢉꢅ  
ꢝꢐꢞꢃꢛꢁꢆꢌ  
4
Data Sheet D16135EJ2V0DS  
2SC2885, 2946, 2946(1)  
[MEMO]  
5
Data Sheet D16135EJ2V0DS  
2SC2885, 2946, 2946(1)  
The information in this document is current as of July, 2001. The information is subject to change  
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data  
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products  
and/or types are available in every country. Please check with an NEC sales representative for  
availability and additional information.  
No part of this document may be copied or reproduced in any form or by any means without prior  
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.  
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of  
third parties by or arising from the use of NEC semiconductor products listed in this document or any other  
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of customer's equipment shall be done under the full  
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third  
parties arising from the use of these circuits, software and information.  
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize  
risks of damage to property or injury (including death) to persons arising from defects in NEC  
semiconductor products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-failure features.  
NEC semiconductor products are classified into the following three quality grades:  
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products  
developed based on a customer-designated "quality assurance program" for a specific application. The  
recommended applications of a semiconductor product depend on its quality grade, as indicated below.  
Customers must check the quality grade of each semiconductor product before using it in a particular  
application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4  

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