2SC2855 [RENESAS]
Silicon NPN Epitaxial; NPN硅外延
| 型号： | 2SC2855 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon NPN Epitaxial |
| 文件： | 总12页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 1, 2003
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2SC2855, 2SC2856
Silicon NPN Epitaxial
ADE-208-1079 (Z)
1st. Edition
Mar. 2001
Application
•
•
Low frequency low noise amplifier
Complementary pair with 2SA1190 and 2SA1191
Outline
TO-92 (1)
. Emitter
2. Collector
3. Base
1
2SC2855, 2SC2856
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
2SC2855
2SC2856
120
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
90
90
120
V
5
5
V
100
100
mA
mA
mW
°C
°C
Emitter current
IE
–100
–100
400
Collector power dissipation
Junction temperature
Storage temperature
PC
400
Tj
150
150
Tstg
–55 to +150
150
2SC2855, 2SC2856
Electrical Characteristics (Ta = 25°C)
2SC2855
2SC2856
Item
Symbol Min Typ Max Min Typ Max Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO 90
—
—
—
—
—
—
120
120
5
—
—
—
—
—
—
V
V
V
IC = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO 90
IC = 1 mA, RBE =
Emitter to base
V(BR)EBO
5
IE = 10 µA, IC = 0
breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio hFE*1
ICBO
IEBO
—
—
—
—
0.1
0.1
—
—
—
—
—
0.1 µA
0.1 µ
800
VCB = 70 V, IE = 0
—
VEB = 2 V, IC = 0
250
—
800 250
= 12 V, IC = 2 mA*2
mA, IB = 1 mA*2
Collector to emitter
saturation voltage
VCE(sat)
0.05 0.10 —
0.05
Base to emitter saturation VBE(sat)
voltage
—
0.7 1.0
—
Gain bandwidth product
fT
—
—
310
3
—
CE = 6 V, IC = 10 mA
Collector output
capacitance
Cob
VCB = 10 V, IE = 0,
f = 1 MHz
Noise figure
NF
—
dB
2.0 dB
VCE = 6 V, IC = 0.1 mA,
Rg = 10 kΩ, f = 1 kHz
VCE = 6 V, IC = 0.1 mA,
Rg = 10 kΩ, f = 10 Hz
Noise voltage referred to e
input
0.7
—
nV/√Hz VCE = 6 V, IC = 10 mA,
Rg = 0, f = 1 kHz
Notes: 1. The 2SC28y hFE as follows.
2. Pulse te
D
E
250 to 500
4
2SC2855, 2SC2856
Typical Output Characteristics
Maximum Collector Dissipation Curve
20
16
12
8
600
400
200
4
IB = 0
80 100
2
60
0
50
100
150
0
Cololtage VCE (V)
Ambient Temperature Ta (°C)
eristics
Typical Output Characteristics
10
8
6
4
2
= 75°C
25°C
–25°C
.0
0.1
0
0.2
0.4
0.6
0.8
1.0
0
Base to Emitter Voltage VBE (V)
Co
2SC2855, 2SC2856
Collector Cut-Off Current vs.
Collector to Base Voltage
Collector Cut-Off Current vs. Collector to
Emitter Voltage
1,000
100
10
1,000
100
10
1.0
1.0
0.1
0.1
0
20
40
60
80
100
0
60
80
100
Collector to Base Voltage VCB (V)
age VCE (V)
Emitter Cut-Off Current vs.Emitter to
Base Voltage
Breakdown
mitter Resistance
1,000
100
10
160
150
140
Typical Value
IC = 1 mA
1.0
0.1
10
100
1 k
10 k
100 k
0
10
Base to Emitter Resistance RBE (Ω)
2SC2855, 2SC2856
DC Current Transfer Ratio vs.
Collector to Emitter Saturation Voltage vs.
Collector Current
Collector Current
1,000
1.0
Pulse
IC = 10 IB
Ta = 75°C
25
–25
300
100
0.3
0.1
Ta = 75°C
25
–25
30
10
0.03
0.01
VCE = 12 V
Pulse
1
3
10
30
100
1
30
100
Collector Current IC (mA)
IC (mA)
oduct vs.
urrent
Base to Emitter Saturation Voltage vs.
Collector Current
10
Pulse
IC = 10 IB
3
50
1.0
75
0.3
0.1
20
10
0.5 1.0
2
5
10 20
50
1
100
Collector Current IC (mA)
2SC2855, 2SC2856
Collector Output Capacitance vs.
Collector to Base Voltage
Noise Voltage Referred to Input vs.
Collector Current
100
10
IE = 0
f = 1 MHz
VCE = 6 V
Rg = 0
f = 1 kHz
30
10
3
1.0
0.3
0.1
3
1
1
3
10
30
100
0.1
0
3
10
Collector to Base Voltage VCB (V)
IC (mA)
Noise Voltage Referred to Input vs.
Signal Source Resistance
d to Input vs.
itter Voltage
1,000
100
0.7
0.6
0.5
VCE = 6 V
f = 1 kHz
10
1.0
IC = 1 mA
Rg = 0
f = 1 kHz
0.1
10
00 k
1
3
10
30
100
Ω)
Collector to Emitter Voltage VCE (V)
2SC2855, 2SC2856
Noise Voltage Referred to Input vs.
Frequency
2.0
1.6
1.2
0.8
0.4
VCE = 6 V
Rg = 0
IC = 1 mA
10
0
10
100
1 k
10 k
Frequency f (Hz)
2SC2855, 2SC2856
Package Dimensions
As of January, 2001
Unit: mm
4.8 ± 0.4
3.8 ± 0.4
0.60 Max
0.55Max
Hitachi Code
JEDEC
EIAJ
TO-92 (1)
Conforms
Conforms
Mass (reference value)
0.25 g
2SC2855, 2SC2856
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combusntrol, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranitachi particularly
for maximum rating, operating supply voltage range, heat radlation
conditions and other characteristics. Hitachi bears no respwhen used
beyond the guaranteed ranges. Even within the guaranforeseeable
failure rates or failure modes in semiconductor devires such as fail-
safes, so that the equipment incorporating Hitachinjury, fire or other
consequential damage due to operation of the
5. This product is not designed to be radiatio
6. No one is permitted to reproduce or dor part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office fdocument or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor &
Nippon Bldg., 2-6-0004, Japan
Tel: Tokyo (03) 3270
URL
NorthAmer
Europe
Asia
nductor.hitachi.com/
.hitachi-eu.com/hel/ecg
apac.hitachi-asia.com
Japan
www.hitachi.co.jp/Sicd/indx.htm
For further information write
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive, Dornacher Straβe 3
Hitachi Europe GmbH
Electronic Components Group
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
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Group III (Electronic Components)
7/F., North Tower,
San Jose,CA 95134
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World Finance Centre,
Tel: <1> (408) 433-1990 Germany
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0
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Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
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Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
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Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
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