2SC1472 [RENESAS]
Silicon NPN Epitaxial, Darlington; 硅NPN外延，达林顿
| 型号： | 2SC1472 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon NPN Epitaxial, Darlington |
| 文件： | 总6页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC1472(K)
Silicon NPN Epitaxial, Darlington
REJ03G0688-0200
(Previous ADE-208-1054)
Rev.2.00
Aug.10.2005
Application
High gain amplifier
Outline
RENESAS Packagcode: PRSS0003DA-A
(Package name: 2 (1))
1. Emitter
2. Collector
3. Base
3
2
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
S
VC
VCEO
VEBO
IC
Unit
V
Collector to emitter voltage
Emitter to base voltage
Collector current
V
V
mA
mA
mW
°C
°C
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
iC(peak)
PC
Tj
0
Tstg
–55 to +150
Rev.2.00 Aug 10, 2005 page 1 of 5
2SC1472(K)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)CEO
ICBO
Min
30
Typ
—
Max
—
Unit
V
Test conditions
IC = 1 mA, RBE = ∞
Collector to emitter breakdown voltage
Collector cutoff current
—
—
100
nA
nA
VCB = 30 V, IE = 0
VEB = 10 V, IC = 0
Emitter cutoff current
IEBO
—
—
100
1
DC current transfer ratio
hFE1
hFE2
*
*
2000
3000
—
100000
—
IC = 10 mA, VCE = 5 V
1
—
IC = 100 mA, VCE = 5 V
(Pulse Test)
1
hFE3
*
3000
—
—
IC = 400 mA, VCE = 5 V
(Pulse Test)
Collector to emitter saturation voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
Turn on time
VCE(sat)
VBE(sat)
fT
—
—
50
—
—
—
—
—
—
60
1.5
2.0
—
V
V
IC = 100 mA, IB = 0.1 mA
IC = 100 mA, IB = 0.1 mA
MHz VCE = 5 V, IC = 10 mA
Cob
ton
10
—
pF
ns
VCB = 10 V, IE = 0, f = 1 MHz
VCC = 11 V
IC = 100 IB1 = 100 mA
IB2 = –IB1
Turn off time
Storage time
—
—
800
350
—
—
ns
ns
Note: 1. The 2SC14ws.
A
hFE1
hFE2
hFE3
2000 to 10000
3000 min
3000 min
100
Switching Time Test Circuit
Response Waveform
C
D.U.T.
6 k
90%
100
6 k
0.002
0%
%
0.002
50
P.G.
tr, tf ≤ 15 ns
PW 10 µs
duty ratio ≤ 10%
90%
10%
– +
50
– +
50
11 V
–6 V
tstg
toff
Unit R : Ω
C : µF
Rev.2.00 Aug 10, 2005 page 2 of 5
2SC1472(K)
Main Characteristics
Typical Output Characteristics
Maximum Collector Dissipation Curve
500
600
400
200
400
300
200
100
6
4
2 µA
IB = 0
0
50
100
150
0
2.0
4.0
6.0
8.0
10
Collector to Emitter Voltage VCE (V)
Ambient TemTa (°C)
Collector Cutoff Current vs.
Collector to Emitter Voltage
Ty
200
10,000
100
RBE = ∞
1,000
100
10
160
120
80
75
50
TC = 25°C
40
IB = 0
40 50
0
30
10
20
30
Collector to Emitter Voltage VCE (V)
VCE (V)
DC Current Transfer Ratio vs.
Collector Current
r Saturation
lector Current
1.1
80
70
60
50
40
30
20
10
0
VCE = 5 V
Pulse
IC = 1,0 IB
1.0
0.9
0.8
0.7
0.6
0.5
Pulse
0.4
0.3
2.0
1
2
5.0 10 20
50 100 200 500
5
10 20
50 100 200 500
Collector Current IC (mA)
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 3 of 5
2SC1472(K)
Collector to Emitter Saturation
Voltage vs. Base Current
Base to Emitter Saturation
Voltage vs. Collector Current
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2.4
Pulse
IC = 1,000 IB
Ta = 25°C
Pulse
2.0
1.6
1.2
0.8
0.4
0
IC = 500 mA
20 50 100 200
1
2
5
10 20
50 100 200 500
1
3
10
30
100 300 1,000
Collector Current IC (mA)
Base CurrenIB (mA)
Input and OVoltage
10
Switching Time vs. Collector Current
30
IC = 100 IB1 = –100 IB2
VCC = 10.5 V
10
8
3
toff
6
Cib(IC = 0)
1.0
tstg
4
ton
td
2
0
10 30
100 300
0.1
0.3
1.0
3
10
30
nt IC (mA)
Collector to Base Voltage VCB (V)
Emitter to Base Voltage VEB (V)
Response Waveform
Switching Time Test Circuit
D.U.T.
CRT
13 V
Input
90%
10%
90%
0
0.002
0.002
50
P.G.
90%
10%
Unit R : Ω
C : µF
Output
0
tr, tf ≤ 15 ns
– +
50
– +
50
10%
PW ³ 10 µs
10.5 V
–6 V
tstg
toff
td
duty ratio ≤ 10%
ton
Rev.2.00 Aug 10, 2005 page 4 of 5
2SC1472(K)
Package Dimensions
JEITA Package Code
SC-43A
RENESAS Code
PRSS0003DA-A
Package Name
MASS[Typ.]
0.25g
Unit: mm
TO-92(1) / TO-92(1)V
4.8 0.3
3.8 0.3
0.60 Max
0Max
0.5 Max
Ordering Information
Part Name
Quantity
pping Container
2SC1472KATZ-E
2SC1472KBTZ-E
2500
Note: For some grades, production may be terminated. Pleafice to check the state of
production before ordering the product.
Rev.2.00 Aug 10, 2005 page 5 of 5
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Colophon .3.0
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