概述
规格参数
数据手册2SB861 概述
Silicon PNP Triple Diffused PNP硅三重扩散 功率双极晶体管
2SB861 规格参数
| 生命周期： | Obsolete | 零件包装代码： | TO-220AB |
| 包装说明： | TO-220AB, 3 PIN | 针数： | 3 |
| Reach Compliance Code： | compliant | ECCN代码： | EAR99 |
| HTS代码： | 8541.29.00.95 | 风险等级： | 5.4 |
| 外壳连接： | COLLECTOR | 最大集电极电流 (IC)： | 2 A |
| 集电极-发射极最大电压： | 150 V | 配置： | SINGLE |
| 最小直流电流增益 (hFE)： | 60 | JEDEC-95代码： | TO-220AB |
| JESD-30 代码： | R-PSFM-T3 | 元件数量： | 1 |
| 端子数量： | 3 | 最高工作温度： | 150 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | FLANGE MOUNT | 极性/信道类型： | PNP |
| 认证状态： | Not Qualified | 表面贴装： | NO |
| 端子形式： | THROUGH-HOLE | 端子位置： | SINGLE |
| 晶体管应用： | AMPLIFIER | 晶体管元件材料： | SILICON |
| Base Number Matches： | 1 |
2SB861 数据手册
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April 1, 2003
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2SB861
Silicon PNP Triple Diffused
ADE-208-862 (Z)
1st. Edition
September 2000
Application
Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD1138
Outline
TO-220AB
1. Base
2. Collector
(Flange)
3. Emitter
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Rating
–200
–150
–6
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
V
V
–2
A
Collector peak current
Collector power dissipation
IC(peak)
–5
A
PC
1.8
W
W
°C
°C
PC*1
Tj
30
Junction temperature
150
Storage temperature
Tstg
–45 to +150
Note: 1. Value at TC = 25°C
2SB861
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown V(BR)CBO
voltage
–150
—
—
V
IC = –50 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
–6
—
—
V
IE = –5 mA, IC = 0
Collector cutoff current
DC current transfer ratio
ICBO
—
60
60
—
—
—
—
—
–1
200
—
µA
VCB = –120 V, IE = 0
1
hFE1
hFE2
*
VCE = –4 V, IC = –50 mA
VCE = –10 V, IC = –500 mA*2
IC = –500 mA, IB = –50 mA
Collector to emitter saturation VCE(sat)
voltage
–3
V
Base to emitter voltage
VBE
—
—
—
–1
—
V
VCE = –4 V, IC = –50 mA
Collector output capacitance
Cob
30
pF
VCB = –100 V, IE = 0,
f = 1 MHz
Notes: 1. The 2SB861 is grouped by hFE1 as follows.
2. Pulse test
B
C
60 to 120
100 to 200
Maximum Collector Dissipation Curve
40
30
20
10
Area of Safe Operation
–10
–5
IC (max) (Continuous)
(–15 V, –2 A)
–2
–1.0
–0.5
TC
(–60 V, –0.4 A)
–0.2
–0.1
1.8 W
Ta
(–150 V, –65 mA)
200
150
100
50
0
–0.05
–2
–5 –10 –20 –50 –100–200
Ambient temperature Ta (°C)
Case temperature TC (°C)
Collector to emitter Voltage VCE (V)
2SB861
Typical Output Characteristics
Typical Transfer Characteristics
VCE = –4 V
TC = 75°C
–1.0
–0.8
–0.6
–0.4
–0.2
–1,000
–500
TC = 25°C
25
–25
–200
–100
–50
–20
–10
–5
–1 mA
IB = 0
–8
0
–4
–12
–16
–20
–0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1.0
Collector to emitter Voltage VCE (V)
Base to emitter voltage VBE (V)
Collector to Emitter Saturation
Voltage vs. Collector Current
DC Current Transfer Ratio vs.
Collector Current
–10
500
IC = 10 IB
VCE = –4 V
TC = 75°C
–5
200
100
50
25
–2
–1.0
–0.5
–25
TC = 75°C
25
–25
20
10
5
–0.2
–0.1
–10 –20
–50 –100 –200 –500–1,000
–10 –20
–50 –100 –200 –500–1,000
Collector current IC (mA)
Collector current IC (mA)
2SB861
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of
this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual
property claims or other problems that may result from applications based on the examples described
herein.
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Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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U S A
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Tel: 0628-585000
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Tel: 27359218
Fax: 27306071
2SB861 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2SB861-B | MCC | PNP Silicon Power Transistors | 获取价格 |
|
| 2SB861-B-BP-HF | MCC | Power Bipolar Transistor, | 获取价格 |
|
| 2SB861-C | MCC | PNP Silicon Power Transistors | 获取价格 |
|
| 2SB861B | ETC | TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-220AB | 获取价格 |
|
| 2SB861C | HITACHI | Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN | 获取价格 |
|
| 2SB861C-E | RENESAS | 2A, 150V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN | 获取价格 |
|
| 2SB861_15 | JMNIC | Silicon PNP Power Transistors | 获取价格 |
|
| 2SB861_2014 | JMNIC | Silicon PNP Power Transistors | 获取价格 |
|
| 2SB862 | ETC | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-220AB | 获取价格 |
|
| 2SB863 | ISC | Silicon PNP Power Transistors | 获取价格 |
|
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