2SB624ABV1 [RENESAS]
Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOLD PACKAGE-3;
| 型号： | 2SB624ABV1 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOLD PACKAGE-3 放大器 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：245K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SILICON TRANSISTOR
2SB624A
AUDIO FREQUENCY POWER AMPLIFIER
PNP SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
PACKAGE DRAWING
(Unit: mm)
• Complementary to NEC 2SD596A NPN Transistor.
High DC Current Gain: hFE = 200 TYP. (VCE 1.0 V, I = −100 mA)
•
=
−
C
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Total Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
PT
Tj
−30
−25
−5.0
−700
200
V
V
V
mA
mW
°C
150
Storage Temperature Range
Tstg
−55 to +150 °C
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
SYMBOL
ICBO
MIN.
TYP.
MAX.
−100
−100
400
UNIT
nA
TEST CONDITIONS
VCB = −30 V, IE = 0 A
VEB = −5.0 V, IC = 0 A
VCE = −1.0 V, IC = −100 mA Note
VCE = −1.0 V, IC = −700 mA Note
IC = −700 mA, IB = −70 mA Note
VCE = −6.0 V, IC = −10 mA Note
VCE = −6.0 V, IE = 10 mA
IEBO
nA
hFE1
110
50
200
hFE2
Collector Saturation Voltage
Base to Emitter Voltage
Gain Bandwidth Product
Output Capacitance
VCE(sat)
VBE
−0.25
−640
160
−0.6
V
−600
−700
mV
MHz
pF
fT
Cob
17
VCB = −6.0 V, IE = 0 A, f = 1.0 MHz
Note Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2%
hFE1 CLASSIFICATION
Marking
BV1
BV2
BV3
170 to 270
BV4
BV5
250 to 400
hFE1
110 to 180
135 to 220
200 to 320
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18029EJ1V0DS00 (1st edition)
Date Published April 2006 NS CP(K)
Printed in Japan
c
2006
2SB624A
TYPICAL CHARACTERISTICS (TA = 25°C)
2
Data Sheet D18029EJ1V0DS
2SB624A
3
Data Sheet D18029EJ1V0DS
2SB624A
•
The information in this document is current as of April, 2006. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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appear in this document.
•
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Descriptions of circuits, software and other related information in this document are provided for illustrative
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customers or third parties arising from the use of these circuits, software and information.
•
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and visual equipment, home electronic appliances, machine tools, personal electronic equipment
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"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
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The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
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(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
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