2SA1836-M4 [RENESAS]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon;
| 型号： | 2SA1836-M4 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
PNP SILICON EPITAXIAL TRANSISTOR
2SA1836
PNP SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SA1836 is PNP silicon epitaxial transistor.
PACKAGE DRAWING (Unit: mm)
+0.1
–0.05
0.1
0.3 ± 0.05
FEATURES
• High DC current gain: hFE2 = 200 TYP.
• High voltage: VCEO = −50 V
3
0 to 0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
2
1
Collector to Base Voltage
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
PT
−60
−50
V
V
+0.1
0.2
–0
Collector to Emitter Voltage
Emitter to Base Voltage
0.6
0.5
0.5
0.75 ± 0.05
−5.0
−100
−200
200
V
1.0
1.6 ± 0.1
Collector Current (DC)
mA
mA
mW
°C
Collector Current (pulse) Note1
Total Power Dissipation (TA = 25°C) Note2
Junction Temperature
1: Emitter
2: Base
3: Collector
Tj
150
Storage Temperature Range
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
Tstg
–55 to + 150 °C
2. When mounted on ceramic substrate of 3.0 cm2 x 0.64 mm
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Collector Cut-off Current
SYMBOL
ICBO
TEST CONDITIONS
VCB = −60 V, IE = 0
MIN. TYP. MAX. UNIT
−100
−100
nA
nA
−
Emitter Cut-off Current
IEBO
VEB = −5.0 V, IC = 0
Note
DC Current Gain
hFE1
VCE = −6.0 V, IC = −0.1 mA
VCE = −6.0 V, IC = −1.0 mA
VCE = −6.0 V, IC = −1.0 mA
IC = −100 mA, IB = −10 mA
IC = −100 mA, IB = −10 mA
VCE = −6.0 V, IE = 10 mA
VCE = −6.0 V, IE = 0, f = 1.0 MHz
50
90
hFE2
200
600
−
Note
Base to Emitter Voltage
VBE
−0.62
V
Note
Collector Saturation Voltage
VCE(sat)
VBE(sat)
fT
−0.18 −0.3
−0.86 −1.0
180
V
Note
Base Saturation Voltage
Gain Bandwidth Product
Output Capacitance
V
50
MHz
pF
Cob
4.5
6.0
Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%
hFE CLASSFICATION
Marking
hFE2
M4
M5
M6
M7
300 to 600
90 to 180
135 to 270
200 to 400
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
Date Published July 2001 NS CP(K)
Printed in Japan
D15615EJ1V0DS00 (1st edition)
2001
©
2SA1836
TYPICAL CHARACTERISTICS (TA = 25°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
−100
V
CE = −6.0 V
Free air
−30
−10
−3
250
When mounted on ceramic substrate of 3.0 cm x 0.64 mm
200
150
100
C
˚
−1
C
˚
C
= 75
˚
A
25
T
25
–
−0.3
−0.1
2
50
−0.03
−0.01
0
25
50
75
100
125
150
−0.4 −0.5
−0.6
−0.7
−0.8
−0.9
−1.0
T
A - Ambient Temperature - ˚C
V
BE - Base to Emitter Voltage - V
COLLECTOR CURRENT vs. COLLECTOR TO
EMITTER VOLTAGE
COLLECTOR CURRENT vs. COLLECTOR TO
EMITTER VOLTAGE
−8
−6
−100
2.0
−
−
1.8
1.6
−
1.4
−
−
45
40
35
30
25
20
15
10
5.0 µA
−80
−60
1.2
−
−
1.0
−
0.8
−
−
−0.6
−0.4
−
−
−4
−2
−40
−20
−
−
I
B
= −0.2 mA
−
I = −
B
0
−0.2
−0.4
−0.6
−0.8
−1.0
0
−10
−20
−30
−40
VCE - Collector to Emitter Voltage - V
V
CE - Collector to Emitter Voltage - V
COLLECTOR AND BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
OUTPUT CAPACITANCE vs. REVERSE VOLTAGE
−1
10
V
BE(sat)
f = 1.0 MHz
−0.5
5
−0.2
−0.1
2
1
V
CE(sat)
−0.05
0.5
−0.02
−0.01
0.2
0.1
.
I
C
= 10
I
B
−1
−2
−5
−10
−20
−50 −100
−1
−2
−5
−10
−20
−50 −100
I
C
- Collector Current - mA
VCB - Collector to Base Voltage - V
2
Data Sheet D15615EJ1V0DS
2SA1836
DC CURRENT GAIN vs. COLLECTOR CURRENT
1000
DC CURRENT GAIN vs. COLLECTOR CURRENT
1000
500
V
CE = −6.0 V
T
A
= 75˚C
25˚C
500
−25˚C
V
CE = −6 V
−1 V
200
100
50
200
100
50
20
10
20
10
−0.1 −0.3
−1
−3
−10
−30
−100
−0.1 −0.3
−1
−3
−10
−30
−100
IC - Collector Current - mA
I
C
- Collector Current - mA
GAIN BANDWIDTH PRODUCT vs.
EMITTER CURRENT
1000
500
200
100
50
V
CE = −6 V
−1 V
20
10
1
2
5
10
20
50
100
I
E
- Emitter Current - mA
3
Data Sheet D15615EJ1V0DS
2SA1836
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
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patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
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M8E 00. 4
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