2SA1129-K-AZ [RENESAS]
Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, MP-25, 3 PIN;
| 型号： | 2SA1129-K-AZ |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, MP-25, 3 PIN 局域网 开关 晶体管 |
| 文件： | 总6页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SILICON POWER TRANSISTOR
2SA1129
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
ORDERING INFORMATION
The 2SA1129 is a mold power transistor developed for mid-speed
switching, and is ideal for use as a ramp driver.
Part No.
Package
2SA1129
TO-220AB
FEATURES
• Large current capacity with small package: IC(DC) = −7.0 A
• Low collector saturation voltage:
(TO-220AB)
VCE(sat) = −0.3 V MAX. @IC = −3.0 A, IB = −0.1 A
• Complementary transistor: 2SC2654
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
VCBO
Conditions
Ratings
−30
−30
−7.0
−7.0
−15
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
VCEO
V
VEBO
V
IC(DC)
A
PW ≤ 300 µs,
IC(pulse)
A
duty cycle ≤ 10%
−3.5
40
Base current (DC)
IB(DC)
PT
A
TC = 25°C
TA = 25°C
Total power dissipation
W
W
°C
°C
1.5
Junction temperature
Storage temperature
Tj
150
−55 to +150
Tstg
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14856EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
©
2SA1129
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −30 V, IE = 0 A
MIN.
TYP.
MAX.
−10
Unit
µA
µA
VEB = −5.0 V, IC = 0 A
−10
IEBO
VCE = −1.0 V, IC = −3.0 ANote
VCE = −1.0 V, IC = −5.0 ANote
IC = −3.0 A, IB = −0.1 ANote
IC = −5.0 A, IB = −0.5 ANote
IC = −3.0 A, IB = −0.1 ANote
IC = −5.0 A, IB = −0.5 ANote
hFE1
40
20
200
DC current gain
hFE2
−0.3
−0.6
−1.5
−2.0
1.0
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Base saturation voltage
Turn-on time
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
ton
V
V
V
V
IC = −5.0 A, RL = 4.0 Ω,
IB1 = −IB2 = −0.5 A, VCC ≅ −20 V
PW = 50 µs, duty cycle = 2%
µs
µs
µs
Storage time
tstg
2.5
Fall time
tf
1.0
Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
hFE1
M
L
K
40 to 80
60 to 120
100 to 200
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
2
Data Sheet D14856EJ2V0DS
2SA1129
TYPICAL CHARACTERISTICS (TA = 25°C)
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Data Sheet D14856EJ2V0DS
2SA1129
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Data Sheet D14856EJ2V0DS
2SA1129
PACKAGE DRAWING (UNIT: mm)
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Data Sheet D14856EJ2V0DS
2SA1129
•
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M8E 00. 4
相关型号：
2SA1129-L
Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, MP-25, 3 PIN
RENESAS
2SA1129-L-AZ
Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, MP-25, 3 PIN
NEC
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