TFMAJ110A-W [RECTRON]
Trans Voltage Suppressor Diode,;型号: | TFMAJ110A-W |
厂家: | RECTRON SEMICONDUCTOR |
描述: | Trans Voltage Suppressor Diode, 瞬态抑制器 二极管 光电二极管 局域网 |
文件: | 总4页 (文件大小:990K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TVS
RECTRON
TECHNICAL SPECIFICATION
TFMAJ
SERIES
SEMICONDUCTOR
GPP TRANSIENT VOLTAGE SUPPRESSOR
400 WATT PEAK POWER 1.0 WATT STEADY STATE
FEATURES
* Plastic package has underwriters laboratory
* Glass passivated chip construction
* 400 watt surage capability at 1ms
* Excellent clamping capability
* Low zener impedance
DO-214AC
* Fast response time
Ratings at 25 oC ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Dimensions in inches and (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types TFMAJ5.0 thru TFMAJ170
Electrical characteristics apply in both direction
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
SYMBOL
VALUE
UNITS
Watts
Amps
RATINGS
P
PPM
Minimum 400
SEE TABLE 1
Peak Power Dissipation with a 10/1000uS (Note 1,2,5 Fig.1)
Peak Pulse Current with a 10/1000uS waveform ( Note 1, Fig.2 )
I
PPM
Steady State Power Dissipation (Note 3)
P
M
(
AV
)
1.0
Watts
I
FSM
40
Amps
Volts
Peak Forward Surge Current per Fig.5 (Note 3)
V
F
3.5
Maximum Instantaneous Forward Voltage at 25A (Note 4)
T
J
, TSTG
-55 to + 150
0 C
Operating and Storage Temperature Range
1998-8
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25oC per Fig.2.
2. Mounted on 0.2 X 0.2”( 5.0 X 5.0mm ) copper pad to each terminal.
3. Lead temperature at TL = 25oC
4. Measured on 8.3mS single half sine-wave duty cycle = 4 pules per minute maximum.
5. Peak pulse power waveform is 10/1000uS.
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