SU2L [RECTRON]

SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 200 Volts CURRENT 1.0 Ampere; 表面安装玻璃钝化超快速硅整流电压范围50到200伏特电流1.0安培
SU2L
型号: SU2L
厂家: RECTRON SEMICONDUCTOR    RECTRON SEMICONDUCTOR
描述:

SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 200 Volts CURRENT 1.0 Ampere
表面安装玻璃钝化超快速硅整流电压范围50到200伏特电流1.0安培

整流二极管 光电二极管 瞄准线
文件: 总5页 (文件大小:374K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SU1L  
THRU  
SU4L  
SURFACE MOUNT GLASS PASSIVATED  
SUPER FAST SILICON RECTIFIER  
VOLTAGE RANGE 50 to 200 Volts CURRENT 1.0 Ampere  
FEATURES  
* Glass passivated device  
* For surface mounted applications  
* Ultrafast recovery times dor high efficiency  
* Low forward voltage, low power loss  
* Low leakage current  
SOD-123FL  
MECHANICAL DATA  
* Epoxy: Device has UL flammability classification 94V-O  
* Metallurgically bonded construction  
* Mounting position: Any  
.114 (2.9)  
.106 (2.7)  
.077 (1.95)  
.035 (0.90)  
.028 (0.70)  
* Weight: 0.016 gram  
.069 (1.75)  
.008 (0.20)  
.039 (1.00)  
.035 (0.90)  
.150 (3.8)  
.142 (3.6)  
.052 (1.32)  
.050 (1.28)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
.033 (0.85)  
.030 (0.75)  
.033 (0.85)  
.030 (0.75)  
.044 (1.12)  
.043 (1.08)  
Dimensions in inches and (millimeters)  
O
MAXIMUM RATINGS (@ T  
A
=25 C unless otherwise noted)  
SYMBOL  
SU1L  
50  
SU2L  
100  
70  
SU3L  
150  
SU4L  
200  
UNITS  
Volts  
Volts  
Volts  
RATINGS  
VRRM  
VRMS  
VDC  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
35  
105  
140  
50  
100  
150  
Maximum DC Blocking Voltage  
200  
Maximum Average Forward Rectified Current  
IO  
1.0  
20  
Amps  
Amps  
O
at T = 55 C  
A
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
IFSM  
Typical Thermal Resistance (Note 1)  
Typical Thermal Resistance (Note 1)  
Typical Junction Capacitance (Note 2)  
Operating Temperature Range  
R
R
120  
20  
0C/W  
0C/W  
pF  
θ
θ
J A  
J L  
CJ  
TJ  
18  
0 C  
150  
Storage Temperature Range  
TSTG  
-55 to + 150  
0 C  
O
ELECTRICAL CHARACTERISTICS(@T  
A
=25 C unless otherwise noted)  
CHARACTERISTICS  
SYMBOL  
VF  
SU1L  
SU2L  
SU3L  
SU4L  
UNITS  
Volts  
µA  
Maximum Instantaneous Forward Voltage at 1.0A DC  
0.95  
5
@TA = 25oC  
Maximum Average Reverse Current  
IR  
at Rated DC Blocking Voltage  
@TA = 100oC  
350  
µA  
Maximum Reverse Recovery Time (Note 4)  
20  
nSec  
trr  
2006-12  
NOTES : 1. Thermal Resistance :Mounted on PCB.  
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.  
3. "Fully ROHS compliant","100% Sn plating (Pb-free)".  
4. Test Conditions: I = 0.5A, I = -1.0A, I = -0.25A.  
RR  
F
R
RATING AND CHARACTERISTICS CURVES ( SU1L THRU SU4L )  
trr  
+0.5A  
50  
NONINDUCTIVE  
10 Ω  
NONINDUCTIVE  
( - )  
PULSE  
GENERATOR  
(NOTE 2)  
D.U.T  
0
( + )  
25 Vdc  
(approx)  
( - )  
-0.25A  
1
( + )  
OSCILLOSCOPE  
(NOTE 1)  
NON-  
INDUCTIVE  
NOTES:  
1
Rise Time = 7ns max. Input Impedance =  
1 megohm. 22pF.  
-1.0A  
2. Rise Time = 10ns max. Source Impedance =  
50 ohms.  
1cm  
SET TIME BASE FOR 8/1 ns/cm  
FIG.1 TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC  
1.0  
1000  
T
= 100 OC  
A
0.8  
0.6  
0.4  
100  
10  
T
= 75 OC  
A
T
= 25 OC  
A
Single Phase  
Half Wave 60Hz  
Resistive or  
1.0  
0.1  
0.2  
0
Inductive Load  
0
25  
50  
75  
100  
125  
150  
175  
0
20  
40  
60  
80  
100  
120  
140  
AMBIENT TEMPERATURE, (OC)  
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)  
FIG.2 TYPICAL FORWARD CURRENT  
DERATING CURVE  
FIG.3 TYPICAL REVERSE  
CHARACTERISTICS  
RATING AND CHARACTERISTICS CURVES ( SU1L THRU SU4L )  
20  
10  
20  
10  
8.3ms Single Half Sine-Wave  
(JEDED Method)  
T
= 25 OC  
J
3.0  
1.0  
5
0.3  
0.1  
3
2
0.03  
0.01  
Pulse Width=300uS  
1% Duty Cycle  
1
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
1
5
10  
50  
100  
INSTANTANEOUS FORWARD VOLTAGE, (V)  
NUMBER OF CYCLES AT 60Hz  
FIG.4 TYPICAL INSTANTANEOUS FORWARD  
CHARACTERISTICS  
FIG.5 MAXIMUM NON-REPETITIVE FORWARD  
SURGE CURRENT  
200  
100  
T
= 25 OC  
J
60  
40  
20  
10  
6
4
2
1
0.1 0.2  
0.4  
1.0  
2
4
10  
20  
40  
100  
REVERSE VOLTAGE, (V)  
FIG.6 TYPICAL JUNCTION CAPACITANCE  
Mounting Pad Layout  
.052 MIN.  
(1.32 MIN.)  
.033 MIN.  
(0.85 MIN.)  
.044 MIN.  
(1.12 MIN.)  
.033 MIN.  
(0.85 MIN.)  
0.165  
(4.19) REF  
Dimensions in inches and (millimeters)  
DISCLAIMER NOTICE  
Rectron Inc reserves the right to make changes without notice to any product  
specification herein, to make corrections, modifications, enhancements or other  
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-  
lity for any errors or inaccuracies. Data sheet specifications and its information  
contained are intended to provide a product description only. "Typical" paramet-  
ers which may be included on RECTRON data sheets and/ or specifications ca-  
n and do vary in different applications and actual performance may vary over ti-  
me. Rectron Inc does not assume any liability arising out of the application or  
use of any product or circuit.  
Rectron products are not designed, intended or authorized for use in medical,  
life-saving implant or other applications intended for life-sustaining or other rela-  
ted applications where a failure or malfunction of component or circuitry may di-  
rectly or indirectly cause injury or threaten a life without expressed written appr-  
oval of Rectron Inc. Customers using or selling Rectron components for use in  
such applications do so at their own risk and shall agree to fully indemnify Rect-  
ron Inc and its subsidiaries harmless against all claims, damages and expendit-  
ures.  

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