SF14-B [RECTRON]
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2;
| 型号： | SF14-B |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2 二极管 |
| 文件： | 总2页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SF11
THRU
SF17
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
GLASS PASSIVATED SUPER FAST RECTIFIER
VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere
FEATURES
* High reliability
* Low leakage
* Low forward voltage
* High current capability
* Super fast switching speed
* High surge capability
* Good for switching mode circuit
DO-41
MECHANICALDATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
.034 (0.9)
DIA.
.028 (0.7)
1.0 (25.4)
MIN.
* Weight: 0.33 gram
.205 (5.2)
.166 (4.2)
.107 (2.7)
DIA.
.080 (2.0)
1.0 (25.4)
MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA
= 25oC unless otherwise noted)
SYMBOL
RATINGS
UNITS
SF12
SF13
SF14
SF15
SF16
SF17
SF11
Maximum Recurrent Peak Reverse Voltage
V
V
RRM
RMS
Volts
Volts
Volts
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
600
420
600
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
V
DC
100
I
O
Amps
Amps
1.0
30
at TA
= 55oC
Peak Forward Surge Current IFM (surge):8.3 ms single half
sine-wave superimposed on rated load (JEDEC method)
I
FSM
Typical Junction Capacitance (Note 2)
C
J
pF
0 C
15
10
Operating and Storage Temperature Range
TJ, TSTG
-55 to + 150
SF14
ELECTRICAL CHARACTERISTICS (At T
A
= 25oC unless otherwise noted)
SYMBOL
UNITS
Volts
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
SF13
SF15
SF16
SF17
1.70
SF11
SF12
VF
0.95
1.25
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
@T
A
A
= 25oC
=100oC
5.0
I
R
uAmps
nSec
100
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: I =0.5A, I =-1.0A, IRR=-0.25A.
2. Measured at 1 MH and applied reverse voltage of 4.0 volts.
trr
35
50
F
R
2004-12
REV.A
Z
(
)
RATING AND CHARACTERISTIC CURVES SF11 THRU SF17
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
50
NONINDUCTIVE
10
trr
NONINDUCTIVE
2.0
1.0
0
+0.5A
Single Phase
Half Wave 60Hz
Resistive or
(-)
D.U.T
Inductive Load
( + )
0
PULSE
GENERATOR
(NOTE 2)
25 Vdc
(approx)
( - )
-0.25A
1
OSCILLOSCOPE
(NOTE 1)
( + )
NON-
INDUCTIVE
-1.0A
0
25 50 75 100 125150175
1cm
1
Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
NOTES:
SET TIME BASE FOR
10 ns/cm
AMBIENT TEMPERATURE (
)
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
10
100
10
T
= 150
= 100
J
1.0
SF17
T
J
SF15~SF16
SF11~SF14
1.0
.1
.1
T
= 25
J
T = 25
J
.01
Pulse Width = 300uS
1% Duty Cycle
.01
.001
0
20
40
60
80
100
120 140
0
.2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
35
200
100
60
30
8.3ms Single Half Sine-Wave
(JEDEC Method)
25
40
20
20
15
10
SF11~SF14
10
6
4
T
= 25
SF15~SF17
J
5
0
2
1
.1 .2 .4
1.0
2
4
10 20 40 100
1
2
5
10
20
50
100
REVERSE VOLTAGE, ( V )
NUMBER OF CYCLES AT 60Hz
RECTRON
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