RM2N650LD [RECTRON]
N-Channel Super Junction Power MOSFET;
| 型号： | RM2N650LD |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | N-Channel Super Junction Power MOSFET |
| 文件： | 总9页 (文件大小：677K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RM2N650IP
RM2N650LD
N-Channel Super Junction Power MOSFET ĊĊ
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
V
DS@Tjmax
710
2.2
2
V
RDS(ON) TYP
Ω
ID
A
Features
ƽNew technology for high voltage device
ƽLow on-resistance and low conduction losses
ƽSmall package
ƽUltra Low Gate Charge cause lower driving requirements
ƽ100% Avalanche Tested
ƽROHS compliant
Application
ƽꢀ Power factor correction˄PFC˅
ƽꢀ Switched mode power supplies(SMPS)
ƽ
Uninterruptible Power Supply˄UPS˅
Package Marking And Ordering Information
Device
Device Package
Marking
RM2N650IP
TO-251
2N650
TO-252
RM2N650LD
2N650
TO-251
TO-252
Table 1. Absolute Maximum Ratings (TC=25ć)
Parameter
Symbol
Value
Unit
V
650
f30
2
Drain-Source Voltage (
VGS 0V˅
VDS
V
Gate-Source Voltage (VDS 0V)
VGS
Continuous Drain Current at Tc=25°C
A
ID (DC)
ID (DC)
IDM (pluse)
PD
Continuous Drain Current at Tc=100°C
1.3
6
A
(Note 1)
A
Pulsed drain current
Maximum Power Dissipation(Tc=25ć)
23
W
Derate above 25°C
0.184
45
W/°C
mJ
A
Single pulse avalanche energy (Note2)
E
AS
Avalanche current(Note 1)
1
IAR
Repetitive Avalanche energy ˈtAR limited by Tjmax
0.06
EAR
mJ
(Note 1)
2016-09
REV:O15
Parameter
Symbol
dv/dt
Value
50
Unit
V/ns
V/ns
°C
Drain Source voltage slope, VDS İ480 V,
Reverse diode dv/dtˈVDS İ480 V,ISD<ID
Operating Junction and Storage Temperature Range
Table 2. Thermal Characteristic
Parameter
15
dv/dt
-55...+150
TJ,TSTG
Symbol
RthJC
Value
5.4
Unit
°C /W
°C /W
Thermal ResistanceˈJunction-to-Case˄Maximum˅
RthJA
75
Thermal ResistanceˈJunction-to-Ambient ˄Maximum˅
Table 3. Electrical Characteristics (TA=25ćunless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max
Unit
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25ć)
Zero Gate Voltage Drain Current(Tc=125ć)
Gate-Body Leakage Current
Gate Threshold Voltage
BVDSS
IDSS
VGS=0V ID=250μA
VDS=650V,VGS=0V
VDS=650V,VGS=0V
VGS= 30V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=1A
650
V
μA
μA
nA
V
1
IDSS
10
IGSS
100
3.5
VGS(th)
RDS(ON)
2.5
3
Drain-Source On-State Resistance
Dynamic Characteristics
Forward Transconductance
Input Capacitance
2200 2500
mΩ
gFS
Clss
Coss
Crss
Qg
VDS = 20V, ID = 1A
2
S
190
13
PF
PF
PF
nC
nC
nC
Ω
VDS=50V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
1.1
3.2
0.6
1.2
9
10
VDS=480V,ID=2A,
Gate-Source Charge
Qgs
Qgd
RG
VGS=10V
Gate-Drain Charge
Intrinsic gate resistance
f = 1 MHz open drain
Switching times
Turn-on Delay Time
td(on)
tr
td(off)
tf
6
3
nS
nS
nS
nS
Turn-on Rise Time
VDD=380V,ID=1A,
RG=50Ω,VGS=10V
Turn-Off Delay Time
65
11
Turn-Off Fall Time
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
Forward On Voltage
ISD
ISDM
VSD
trr
2
6
A
A
TC=25°C
Tj=25°C,ISD=2A,VGS=0V
1
140
0.65
9
1.3
V
Reverse Recovery Time
nS
uC
A
Reverse Recovery Charge
Peak reverse recovery current
Qrr
Irrm
Tj=25°C,IF=2A,di/dt=100A/μs
Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25ć,VDD=50V,VG=10V, RG=25Ω
RATING AND CHARACTERISTICS CURVES (RM2N650IP/RM2N650LD)
Figure1. Safe operating area
Figure2. Source-Drain Diode Forward Voltage
Figure3. Output characteristics
Figure4. Transfer characteristics
Figure5. Static drain-source on resistance
Figure6. RDS(ON) vs Junction Temperature
RATING AND CHARACTERISTICS CURVES (RM2N650IP/RM2N650LD)
Figure7. BVDSS vs Junction Temperature
Figure8. Maximum ID vs Junction Temperature
Figure9. Gate charge waveforms
Figure10. Capacitance
Figure11. Transient Thermal Impedance
Test circuit
1˅Gate charge test circuit & Waveform
2˅Switch Time Test Circuit˖ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
3˅Unclamped Inductive Switching Test Circuit & Waveforms
RECTRON
Marking on the body
Rectron Logo
Part No.
2 N 6 5 0
1 6 X X
Year – Code
Week – code
(WW:01~52)
(Y:16-----2016
17-----2017.....)
TO-251 Package Information
TO-252 Package Information
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
2.400
0.127
0.860
0.580
6.700
5.460
Min.
0.087
0.000
0.026
0.018
0.256
0.201
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
2.200
0.000
0.660
0.460
6.500
5.100
c
D
D1
D2
E
4.830 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
0.236
0.086
0.386
0.244
0.094
0.409
e
L
10.400
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
ꢁe
1.000
1.300
ꢂe
0.024
0.043
ꢁe
0.039
0.051
ꢂe
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
Rectron products are not designed, intended or authorized for use in medical,
life-saving implant or other applications intended for life-sustaining or other rela-
ted applications where a failure or malfunction of component or circuitry may di-
rectly or indirectly cause injury or threaten a life without expressed written appr-
oval of Rectron Inc. Customers using or selling Rectron components for use in
such applications do so at their own risk and shall agree to fully indemnify Rect-
ron Inc and its subsidiaries harmless against all claims, damages and expendit-
ures.
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