RM1A5N30S3E [RECTRON]
Small Signal Field-Effect Transistor,;
| 型号： | RM1A5N30S3E |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总8页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RM1A5N30S3E
N-Channel 30 V (D-S) MOSFET
Description
The RM1A5N30S3E uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
SOT-323
SC-70 (3-LEADS)
'
G
S
ꢀ
General Features
VDS =30V,ID =1.5A
*
ꢂ
D
RDS(ON) <132mΩ @ VGS=10V
ꢁ
R
DS(ON) <144mΩ @ VGS=4.5V
6
RDS(ON) <185mΩ @ VGS=2.5V
Top View
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Application
Power switching application
Hard switched and high frequency circuits
DC-DC Converter
Halogen-free
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
RM1A5N30S3E
SOT-323
-
-
-
1A5N30
(T = 25 °C, unless otherwise noted)
ABSOLUTE MAXIMUM RATINGS
Parameter
A
Symbol
VDS
Limit
30
12
Unit
V
Drain-Source Voltage
VGS
Gate-Source Voltage
TC = 25 °C
1.4
1.1
TC = 70 °C
ID
Continuous Drain Current (TJ = 150 °C)(Note 1)
TA = 25 °C
T$ = 70 °C
1.5
1.2
6
A
IDM
IS
Pulsed Drain Current (t = 300 μs)
TC = 25 °C
TA = 25 °C
TC = 25 °C
0.4
0.3
0.5
Continuous Source-Drain Diode Current
T
C = 70 °C
0.3
PD
W
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
0.4(Note 1)
0.3(Note 1)
TJ, Tstg
- 50 to 150
260
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
°C
2019-05/93
REV:O
Notes:
1. Surface mounted on 1" x 1" FR4 board.
2. Based on TC = 25 °C.
t = 10 s.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
Typ.
250
225
Max.
300
Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
t ꢀꢁ10 s
°C/W
Steady State
RthJF
270
Notes:
1.Surface mounted on 1" x 1" FR4 board.
2.Maximum under steady state conditions is 360 °C/W.
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
30
V
mV/°C
V
VGS = 0 V, ID = 250 μA
ID = 250 μA
ꢂVDS/TJ
ꢂVGS(th)/TJ
VGS(th)
32
- 3
V
DS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
0.6
1.5
1
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = 4.5 V
Gate-Source Leakage
IGSS
20
1
VDS = 0 V, VGS
=
12 V
μA
VDS = 30 V, VGS = 0 V
DS = 30 V, VGS = 0 V, TJ = 55 °C
VDS ꢃ 5 V, VGS = 10 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
10
V
ID(on)
2
A
ꢄ
S
0.110
0.120
0.142
5
0.132
0.144
0.185
VGS = 10 V, ID = 1.4 A
Drain-Source On-State Resistancea
RDS(on)
gfs
V
GS = 4.5 V, ID = 1 A
V
GS = 2.5 V, ID = 0.5 A
Forward Transconductancea
Dynamicb
VDS = 10 V, ID = 1.4 A
Input Capacitance
Ciss
Coss
Crss
105
23
11
2.7
1.4
0.3
0.5
7
Output Capacitance
Reverse Transfer Capacitance
V
DS = 15 V, VGS = 0 V, f = 1 MHz
pF
4.1
2.1
VDS = 15 V, VGS = 10 V, ID = 1.4 A
Total Gate Charge
Qg
nC
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Qgs
Qgd
Rg
VDS = 15 V, VGS = 4.5 V, ID = 1.4 A
f = 1 MHz
1.4
14
4
ꢄ
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
2
9
18
16
16
16
20
23
12
VDD = 15 V, RL = 13.6 ꢄ
ID ꢅ 1.1 A, VGEN = 10 V, Rg = 1 ꢄ
Turn-Off DelayTime
Fall Time
8
8
ns
Turn-On Delay Time
Rise Time
8
13
15
6
VDD = 15 V, RL = 13.6 ꢄ
ID ꢅ 1.1 A, VGEN = 4.5 V, Rg = 1 ꢄ
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
VSD
trr
0.4
6
TC = 25 °C
IF = 1.1 A
A
Body Diode Voltage
0.8
8
1.2
16
6
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Qrr
ta
3
IF = 1.1 A, dI/dt = 100 A/μs, TJ = 25 °C
5
ns
Reverse Recovery Rise Time
tb
3
Notes:
1. Pulse test; pulse width ꢀ 300 μs, duty cycle ꢀ 2 %.
2. Guaranteed by design, not subject to production testing.
(RM1A5N30S3E)
RATING AND CHARACTERISTICS CURVES
10-3
0.006
0.005
0.004
0.003
0.002
0.001
0.000
TJ = 25 °C
10-4
10-5
10-6
10-7
10-8
TJ = 150 °C
TJ = 25 °C
10-9
0
5
10
15
0
3
6
9
12
15
VGS - Gate-to-Source Voltage (V)
VGS - Gate-Source Voltage (V)
Gate Source Voltage vs. Gate Current
Current Derating*Gate Source Voltage vs. Gate Current
6
4.5
3
0.20
VGS = 10 V thru 3 V
0.17
VGS = 2.5 V
0.14
VGS = 2 V
VGS = 4.5 V
1.5
0
0.11
VGS = 10 V
0.08
0
0.5
1
1.5
2
0
1.5
3
4.5
6
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Output Characteristics
On-Resistance vs. Drain Current
2
1.5
1
10
8
ID = 1.4 A
VDS = 8 V
6
VDS = 15 V
4
VDS = 24 V
TC = 25 °C
0.5
0
2
TC = 125 °C
TC = - 55 °C
0
0
0.7
1.4
2.1
2.8
0
0.5
1
1.5
2
VGS - Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Transfer Characteristics
Gate Charge
(RM1A5N30S3E)
RATING AND CHARACTERISTICS CURVES
1.65
1.40
1.15
0.90
0.65
10
ID = 1.5 A
TJ = 150 °C
1
TJ = 25 °C
VGS = 10 V; 4.5 V
0.1
0.0
0.3
0.6
0.9
1.2
- 50 - 25
0
25
50
75
100 125 150
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
0.25
0.2
1.3
1.15
1
ID = 250 μA
ID = 1.5 A
TJ = 125 °C
TJ = 25 °C
0.15
0.1
0.85
0.7
0.05
0.55
0
2
4
6
8
10
- 50 - 25
0
25
50
75
100 125 150
VGS - Gate-to-Source Voltage (V)
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
10
8
10
Limited by RDS(on)
*
100 μs
1 ms
1
0.1
6
10 ms
4
100 ms
DC, 10 s, 1 s
0.01
0.001
2
TA = 25 °C
BVDSS Limited
10
0
0.1
1
100
0.001
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Time (s)
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
(RM1A5N30S3E)
RATING AND CHARACTERISTICS CURVES
1.8
1.35
0.9
0.45
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.45
0.36
0.27
0.18
0.09
0.00
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
TC - Case Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
(RM1A5N30S3E)
RATING AND CHARACTERISTICS CURVES
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
P
DM
0.05
0.02
t
1
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
= 360 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
-4
0.01
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT-323
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.900
0.000
0.900
0.200
0.080
2.000
1.150
2.150
Max.
1.100
0.100
1.000
0.400
0.150
2.200
1.350
2.450
Min.
0.035
0.000
0.035
0.008
0.003
0.079
0.045
0.085
Max.
A
A1
A2
b
0.043
0.004
0.039
0.016
0.006
0.087
0.053
0.096
c
D
E
E1
e
0.650 TYP.
0.525 REF.
0.026 TYP.
0.021 REF.
e1
L
1.200
1.400
0.047
0.055
L1
θ
0.260
0°
0.460
8°
0.010
0°
0.018
8°
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
Rectron products are not designed, intended or authorized for use in medical,
life-saving implant or other applications intended for life-sustaining or other rela-
ted applications where a failure or malfunction of component or circuitry may di-
rectly or indirectly cause injury or threaten a life without expressed written appr-
oval of Rectron Inc. Customers using or selling Rectron components for use in
such applications do so at their own risk and shall agree to fully indemnify Rect-
ron Inc and its subsidiaries harmless against all claims, damages and expendit-
ures.
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