P4FMAJ400C [RECTRON]
Trans Voltage Suppressor Diode, 400W, 324V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC PACKAGE-2;
| 型号： | P4FMAJ400C |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | Trans Voltage Suppressor Diode, 400W, 324V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC PACKAGE-2 瞬态抑制器 二极管 光电二极管 局域网 |
| 文件： | 总5页 (文件大小：1071K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TVS
RECTRON
TECHNICAL SPECIFICATION
P4FMAJ
SERIES
SEMICONDUCTOR
GPP TRANSIENT VOLTAGE SUPPRESSOR
400 WATT PEAK POWER 1.0 WATT STEADY STATE
FEATURES
* Plastic package has underwriters laboratory
* Glass passivated chip construction
* 400 watt surage capability at 1ms
* Excellent clamping capability
* Low zener impedance
DO-214AC
* Fast response time
Ratings at 25 oC ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Dimensions in inches and (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types P4FMAJ6.8 thru P4FMAJ400
Electrical characteristics apply in both direction
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
SYMBOL
VALUE
UNITS
Watts
RATINGS
Peak Power Dissipation at TA C, TP = 1mS ( Note 1 )
= 25o
P
PPM
Minimum 400
Peak Pulse Current with a 10/1000uS waveform
( Note 1, Fig.3 )
I
PPM
SEE TABLE 1
Amps
Watts
Amps
Steady State Power Dissipation at T
L
= 75oC ( Note 2 )
P
M
(
AV
)
1.0
40
Peak Forward Surge Current, 8.3mS single half sine wave-
superimposed on rated load ( JEDEC METHOD ) ( Note 3 )
I
FSM
Maximum Instantaneous Forward Voltage at 25A for
unidirectional only ( Note 4 )
V
F
3.5/6.5
Volts
0 C
Operating and Storage Temperature Range
T
J
, TSTG
-65 to + 175
1998-8
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25oC per Fig.2.
2. Mounted on 0.2 X 0.2” (5.0 X 5.0mm) copper pad to each terminal.
3. Measured on 8.3mS single half Sine-Wave or equivalent wave, duty cycle = 4 pulses per minute maximum.
4. V = 3.0V max. for devices of V(BR) < 200V and V = 5.0V max. for devices of V(BR) > 200V.
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F
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