FR104G-T [RECTRON]
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2;
| 型号： | FR104G-T |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2 二极管 |
| 文件： | 总2页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FR101G
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FR107G
FAST RECOVERY GLASS PASSIVATED RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
* High reliability
* Low leakage
* Low forward voltage drop
* High current capability
* Glass passivated junction
* High switching capability
DO-41
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
.034 (0.9)
DIA.
.028 (0.7)
1.0 (25.4)
MIN.
* Weight: 0.33 gram
.205 (5.2)
.166 (4.2)
.107 (2.7)
DIA.
.080 (2.0)
1.0 (25.4)
MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
FR106G
800
FR101G FR102G FR103G FR104G FR105G FR105PG
FR107G
UNITS
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
RRM
RMS
Volts
Volts
Volts
50
100
200
400
600
600
1000
560
800
35
50
70
140
200
280
400
420
600
420
600
700
Maximum DC Blocking Voltage
VDC
100
1000
Maximum Average Forward Rectified Current
I
O
1.0
Amps
Amps
at TA
= 75oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
30
15
Typical Junction Capacitance (Note 2)
C
J
pF
0 C
Operating and Storage Temperature Range
T
J
, TSTG
-55 to + 150
ELECTRICAL CHARACTERISTICS (At TA
= 25oC unless otherwise noted)
FR101G FR102G FR103G FR104G FR105G
1.3
FR106G FR107G
FR105PG
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 1.0A DC
Maximum DC Reverse Current
SYMBOL
UNITS
Volts
V
F
5.0
uAmps
uAmps
at Rated DC Blocking Voltage T
Maximum Full Load Reverse Current Average,
Full Cycle .375” (9.5mm) lead length at T
= 55oC
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: I = 0.5A, I = -1.0A, IRR = -0.25A
2. Measured at 1 MH and applied reverse voltage of 4.0 volts
3.”Fully ROHS compliant”,”100% Sn plating(Pb-free)”.
A
= 25oC
IR
100
L
trr
nSec
250
150
150
500
F
R
2004-8
Z
(
)
RATING AND CHARACTERISTIC CURVES FR101G THRU FR107G
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
10
NONINDUCTIVE
NONINDUCTIVE
trr
+0.5A
( - )
PULSE
GENERATOR
(NOTE 2)
D.U.T
( + )
0
25 Vdc
(approx)
( - )
-0.25A
1
OSCILLOSCOPE
(NOTE 1)
( + )
NON-
INDUCTIVE
-1.0A
1
Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
NOTES:
SET TIME BASE FOR
50/100 ns/cm
1cm
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 1 - TYPICAL FORWARD
CURRENT DERATING CURVE
1.50
10
1.0
.1
1.25
1.00
.75
.50
.25
0
T
= 25
J
Pulse Width = 300us
1% Duty Cycle
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
.01
.4
.6
.8
1.0 1.2 1.4 1.6
25
50
75
100
125 150
175
INSTANTANEOUS FORWARD VOLTAGE, (V)
AMBIENT TEMPERATURE, (
)
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
FIG. 3 - MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT
50
200
100
40
30
20
10
60
40
20
10
T
= 25
J
6
4
8.3ms Single Half Sine-Wave
(JEDED Method)
2
1
0
6
8 10 20 40 6080100
.1 .2 .4
1.0
2
4
10 20 40 100
1
2
4
REVERSE VOLTAGE, ( V )
NUMBER OF CYCLES AT 60Hz
RECTRON
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