EFM103-W [RECTRON]
Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC PACKAGE-2;
| 型号： | EFM103-W |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC PACKAGE-2 二极管 光电二极管 |
| 文件： | 总2页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EFM101
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
EFM106
SURFACE MOUNT GLASS PASSIVATED
SUPER FAST SILICON RECTIFIER
VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere
FEATURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.057 gram
DO-214AC
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
(
)
0.067 1.70
(
)
)
0.110 2.79
(
)
0.051 1.29
(
0.086 2.18
(
)
0.180 4.57
(
)
0.160 4.06
(
)
0.012 0.305
(
)
0.006 0.152
(
)
0.091 2.31
(
)
)
0.067 1.70
(
0.059 1.50
(
)
)
0.008 0.203
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
(
)
0.035 0.89
(
0.004 0.102
(
)
)
0.209 5.31
(
0.185 4.70
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
EFM101 EFM102 EFM103 EFM104 EFM105 EFM106
UNITS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
V
V
RRM
RMS
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
Volts
Volts
Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
V
DC
O
100
I
1.0
30
Amps
Amps
at TA
= 55oC
Peak Forward Surge Current IFM (surge): 8.3 ms single half
sine-wave superimposed on rated load (JEDEC method)
I
FSM
Typical Junction Capacitance (Note 2)
C
J
15
10
pF
0 C
Operating and Storage Temperature Range
T
J
, TSTG
-65 to + 175
ELECTRICAL CHARACTERISTICS (At T
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
A
= 25oC unless otherwise noted)
SYMBOL
EFM101 EFM102 EFM103 EFM104 EFM105 EFM106
0.95 1.25
UNITS
Volts
V
F
Maximum DC Reverse Current
@T
@T
A
A
= 25oC
=150oC
5.0
50
35
I
R
uAmps
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 1)
trr
nSec
NOTES : 1. Test Conditions: I
F
=0.5A, I
R=-1.0A, IRR=-0.25A.
2001-4
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts.
(
)
RATING AND CHARACTERISTIC CURVES EFM101 THRU EFM106
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
10
50
trr
NONINDUCTIVE
NON-INDUCTIVE
2.0
1.0
0
+0.5A
Single Phase
Half Wave 60Hz
Resistive or
( - )
PULSE
GENERATOR
(NOTE 2)
D.U.T
Inductive Load
( + )
0
25 Vdc
(approx)
( - )
-0.25A
1
OSCILLOSCOPE
(NOTE 1)
( + )
NON-
INDUCTIVE
-1.0A
0
25 50 75 100 125150175
1cm
1
Rise Time = 7ns max. Input Impedance =
1 megohm. 22 pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
NOTES:
SET TIME BASE FOR
5/10 ns/cm
AMBIENT TEMPERATURE (
)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
100
10
T
= 150
J
1.0
.1
T
= 100
= 25
60
J
T
= 25
J
1.0
EFM101~EFM104
Pulse Width = 300uS
1% Duty Cycle
T
J
.01
.1
.01
.001
0
20
40
80 100 120 140
0
.2
.4
.6
.8
1.0
1.2 1.4
INSTANTANEOUS FORWARD VOLTAGE, (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
70
60
50
40
100
60
40
20
T
= 25
J
30
20
10
0
10
6
T
= 25
J
4
2
1
.1
.5
1
2
5
10 20 50 100200 400
.1 .2 .4
1.0
2
4
10 20 40 100
REVERSE VOLTAGE, ( V )
NUMBER OF CYCLES AT 60Hz
RECTRON
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