DB102S [RECTRON]
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER; 单相玻璃钝化硅桥式整流器
| 型号： | DB102S |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
| 文件： | 总2页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DB101S
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
DB107S
SINGLE-PHASE GLASS PASSIVATED
SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
* Surge overload rating - 50 amperes peak
* Ideal for printed circuit board
* Reliable low cost construction utilizing molded
* Glass passivated device
* Polarity symbols molded on body
* Mounting position: Any
DB-S
* Weight: 1.0 gram
(
)
)
.310 7.9
MECHANICAL DATA
(
.290 7.4
(
)
)
.255 6.5
*
Epoxy : Device has UL flammability classification 94V-0
(
.245 6.2
* UL listed the recognized component directory, file #E94233
.009
(
)
)
)
.013 .330
(
)
9.4
(
.003 .076
(
)
)
.042 1.1
(
.410 10.4
(
.038 1.0
(
)
.360 9.4
(
)
)
.060 1.524
(
.040 1.016
(8.51)
(8.13)
.335
.320
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
(
)
)
.135 3.4
(
.115 2.9
(
)
)
.205 5.2
(
.195 5.0
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
DB101S DB102S DB103S DB104S DB105S DB106S DB107S UNITS
V
RRM
RMS
50
35
50
100
70
200
140
200
400
280
600
420
600
800
560
800
1000
700
Volts
Volts
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
V
Maximum DC Blocking Voltage
V
DC
100
400
1.0
1000
Volts
Maximum Average Forward Output Current at T
A
=
40oC
I
O
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
50
Amps
0 C
T
J,
T
STG
-55 to + 150
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (At TA
= 25oC unless otherwise noted)
CHARACTERISTICS
SYMBOL
DB101S DB102S DB103S DB104S DB105S DB106S DB107S UNITS
Maximum Forward Voltage Drop per Bridge
Element at 1.0A DC
V
F
1.1
Volts
uAmps
mAmps
2001-4
Maximum Reverse Current at rated
DC Blocking Voltage per element
@T
A
A
= 25oC
= 125oC
5.0
0.5
I
R
@T
NOTE: Suffix “-s” Surface Mount for Dip Bridge.
(
)
RATING AND CHARACTERISTIC CURVES DB101S THRU DB107S
FIG. 1 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG. 2 - TYPICAL FORWARD CURRENT
DERATING CURVE
60
50
40
30
20
10
0
1.0
8.3ms Single Half Sine-Wave
(JEDED Method)
.5
Single Phase Half Wave
60Hz Inductive or
Resistive Load
0
20
40
60
80
100
120 140
160
0
2
4
6
10
20 40 60 100
AMBIENT TEMPERATURE, (
)
NUMBER OF CYCLES AT 60Hz
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
10
1.0
0.1
.01
10
1.0
0.1
.01
Pulse Width = 300us
1% Duty Cycle
T
= 25
J
T
= 25
J
0
20
40
60
80
100
120 140
.4
.6
.8
1.0
1.2
1.4
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
INSTANTANEOUS FORWARD VOLTAGE, (V)
RECTRON
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