C1815L [RECTRON]

Small Signal Bipolar Transistor, 0.00015A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3;
C1815L
型号: C1815L
厂家: RECTRON SEMICONDUCTOR    RECTRON SEMICONDUCTOR
描述:

Small Signal Bipolar Transistor, 0.00015A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

文件: 总2页 (文件大小:450K)
中文:  中文翻译
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C1815  
SOT-23 BIPOLAR TRANSISTORS  
TRANSISTOR(NPN)  
FEATURES  
* Power dissipation  
PCM :  
0.2  
0.15  
60  
W (Tamb=25OC)  
Collector current  
ICM :  
Collector-base voltage  
*
*
*
mA  
V
:
V
(BR)CBO  
SOT-23  
Operating and storage junction temperature range  
TJ,Tstg: -55OC to +150OC  
COLLECTOR  
3
0.055(1.40)  
0.047(1.20)  
BASE  
MECHANICAL DATA  
* Case: Molded plastic  
1
2
EMITTER  
* Epoxy: UL 94V-O rate flame retardant  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
0.006(0.15)  
0.003(0.08)  
0.043(1.10)  
0.035(0.90)  
0.020(0.50)  
0.012(0.30)  
0.004(0.10)  
0.000(0.00)  
* Weight: 0.008 gram  
0.100(2.55)  
0.089(2.25)  
0.020(0.50)  
0.012(0.30)  
1
2
0.019(2.00)  
0.071(1.80)  
0.118(3.00)  
0.110(2.80)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25OC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
3
Dimensions in inches and (millimeters)  
O
ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted )  
TYP  
CHARACTERISTICS  
SYMBOL  
MIN  
60  
MAX  
-
UNITS  
V
Collector-base breakdown voltage (I = 100µA, I =0)  
(BR)CBO  
(BR)CEO  
-
-
-
-
-
V
C
E
V
-
Collector-emitter breakdown voltage (I = 0.1mA, I =0)  
50  
-
V
C
B
I
0.1  
0.1  
0.1  
Collector cut-off current (V = 60V, I =0)  
CBO  
µA  
µA  
CB  
E
I
-
Collector cut-off current (V = 50V, I =0)  
CEO  
CB  
B
-
I
Emitter cut-off current (V = 5V, I =0)  
EBO  
µA  
EB  
C
-
-
-
-
-
h
DC current gain (V = 6V, I = 2mA)  
FE(1)  
130  
400  
CE  
C
Collector-emitter saturation voltage (I = 100mA, I = 10mA)  
V
V
0.25  
C
B
CE(sat)  
BE(sat)  
-
-
V
Base-emitter voltage (I = 100mA, I = 10mA)  
1
-
C
B
V
80  
Transition frequency (V = 10V, I = 1mA, f= 30MHZ)  
f
T
MHz  
CE  
C
CLASSIFICATION OF h  
FE(1)  
RANK  
Range  
L
H
130 - 200  
200 - 400  
DEVICE MARKING  
Note : "Fully ROHS compliant", "100% Sn plating (Pb-free)".  
HF  
2007-3  
DISCLAIMER NOTICE  
Rectron Inc reserves the right to make changes without notice to any product  
specification herein, to make corrections, modifications, enhancements or other  
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-  
lity for any errors or inaccuracies. Data sheet specifications and its information  
contained are intended to provide a product description only. "Typical" paramet-  
ers which may be included on RECTRON data sheets and/ or specifications ca-  
n and do vary in different applications and actual performance may vary over ti-  
me. Rectron Inc does not assume any liability arising out of the application or  
use of any product or circuit.  
Rectron products are not designed, intended or authorized for use in medical,  
life-saving implant or other applications intended for life-sustaining or other rela-  
ted applications where a failure or malfunction of component or circuitry may di-  
rectly or indirectly cause injury or threaten a life without expressed written appr-  
oval of Rectron Inc. Customers using or selling Rectron components for use in  
such applications do so at their own risk and shall agree to fully indemnify Rect-  
ron Inc and its subsidiaries harmless against all claims, damages and expendit-  
ures.  

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