BR352W [RECTRON]
Bridge Rectifier Diode, 1 Phase, 35A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, BR-35W, 4 PIN;
| 型号： | BR352W |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | Bridge Rectifier Diode, 1 Phase, 35A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, BR-35W, 4 PIN 二极管 |
| 文件： | 总2页 (文件大小：303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BR3505
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
BR3510
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 35 Amperes
FEATURES
* Superior thermal desing
* 400 amperes surge rating
* 1/4// universal faston terminal
* Hole thru for # 8 screw
BR-35
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
BR-35W
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
BR3505 BR351
BR352
200
BR354
400
BR356
600
BR358 BR3510 UNITS
V
RRM
RMS
50
100
800
1000
Volts
Maximum Recurrent Peak Reverse Voltage
V
35
50
70
140
200
280
400
35.0
420
600
560
800
700
Volts
Volts
Amps
Maximum RMS Bridge Input Voltage
V
DC
100
1000
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Output Current at Tc = 55oC
IO
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
400
Amps
0 C
T
J,
T
STG
-55 to + 175
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (At TA
= 25oC unless otherwise noted)
CHARACTERISTICS
SYMBOL
BR3505 BR351
BR352
BR354
BR356
BR358 BR3510 UNITS
Maximum Forward Voltage Drop per element at 17.5A DC
VF
1.1
10
Volts
= 25oC
uAmps
@T
A
C
Maximum Reverse Current at Rated
DC Blocking Voltage per element
I
R
@T
= 100oC
0.5
mAmps
1998-8
NOTE: Suffix ”W” for wire type
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RECTRON
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