BC859 [RECTRON]
SOT-23 Silicon Planar Epitaxial Transistors TRANSISTORS(PNP); SOT- 23硅平面外延晶体管晶体管（ PNP ）
| 型号： | BC859 |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | SOT-23 Silicon Planar Epitaxial Transistors TRANSISTORS(PNP) |
| 文件： | 总4页 (文件大小：309K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC859
SOT-23 Silicon Planar Epitaxial Transistors
TRANSISTORS(PNP)
FEATURES
* Ideally suited for automatic insertion
* For switching and AF amplifier applications
SOT-23
COLLECTOR
3
MECHANICAL DATA
BASE
0.055(1.40)
0.047(1.20)
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
1
2
EMITTER
0.005(0.14)
0.003(0.09)
0.045(1.15)
0.035(0.90)
* Marking: BC859=4D
0.027(0.70)
0.020(0.50)
0.004(0.12)
0.000(0.02)
0.102(2.60)
0.094(2.40)
0.018(0.48)
0.014(0.38)
1
2
0.019(2.00)
0.071(1.80)
0.118(3.00)
0.110(2.80)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
3
Dimensions in inches and (millimeters)
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
Collector–emitter voltage (+VBE = 1V)
Collector–emitter voltage (open base)
Collector current (peak value)
SYMBOL
VALUE
UNITS
-V
max. 30
max. 30
V
V
CEX
-V
CEO
-I
max. 200
max. 250
max. 150
mA
mW
CM
P
Total power dissipation up to Tamb= 60 °C
Junction Temperature
tot
O
T
C
J
Small–signal current gain
>125
h
f
-IC= 2 mA; –VCE= 5 V; f = 1 kHz
fe
< 900
Transition frequency
>100
MHz
T
-IC=10 mA；-VCE = 5 V；f = 100 MHz
Noise figure at Rs = 2kΩ
-IC=200 µA；-VCE = 5 V；f = 30 Hz to 15 kHz
F
F
typ. 1,2
dB
dB
<
<
4
4
f = 1 KHz; B = 200 Hz
dB
VD 2009-11
REV:O
RATINGS (at T = 25°C unless otherwise specified)
A
Limiting values
CHARACTERISTICS
SYMBOL
MIN
-
MAX
30
UNITS
-VCBO
-VCEX
-VCEO
-VEBO
-IC
Collector–base voltage (open emitter)
Collector–emitter voltage (+VBE= 1 V)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
V
V
-
-
-
-
30
30
5
V
V
100
mA
-ICM
IEM
Collector current (peak value)
Emitter current (peak value)
Base current (peak value)
-
-
200
200
mA
mA
mA
mW
oC
-IBM
Ptot
-
-
200
250
Total power dissipation up to Tamb = 60 °C**
Storage temperature
Tstg
TJ
-55 to +150
Junction temperature
-
150
oC
THERMAL CHARACTERISTICS
Tj= Px(Rth j–t+ Rh t–s+ Rth s–a) + Tamb
Thermal resistance
60
From junction to tab
Rth j–t
Rth t–s
K/W
K/W
K/W
280
90
From tab to soldering points
Rth s–a
From soldering points to ambient**
CHARACTERISTICS
T
= 25 °C unless otherwise specified
j
Collector cut–off current
-ICBO
-ICBO
IE= 0; -VCB = 30V; Tj= 25°C
typ.
<
<
1
15
4
nA
nA
mA
Tj= 150°C
Base–emitter voltage
-IC= 2 mA; -VCE = 5 V
-VBE
-VBE
typ. 650
mV
600 to 750
< 820
mV
mV
-IC= 10 mA; -VCE = 5 V
Saturation voltages
-IC= 10 mA; -IB = 0,5 mA
-VCEsat
typ. 75
300
typ. 700
mV
mV
mV
<
-VBEsat
-VCEsat
-IC= 100 mA; -IB = 5 mA
typ. 250
mV
mV
mV
<
650
-VBEsat
Cc
typ. 850
Collector capacitance at f = 1 MHz
-IE = Ie = 0 ; -VCB = 10 V
typ. 4.5
pF
CHARACTERISTICS
(T = 25 °C unless otherwise specified)
j
CHARACTERISTICS
SYMBOL
UNITS
MHz
Transition frequency at f = 100 MHz
-IC = 10 mA ; -VCE = 5 V
fT
>
100
Small–signal current gain at f = 1 kHz
-IC= 2 mA; -VCE = 5 V
hfe
125 to 800
Noise figure at RS= 2 kΩ
-IC= 200 µA; -VCE = 5 V
f = 30 Hz to 15 kHz
F
F
typ. 1.2
dB
dB
dB
dB
<
4
f = 1 kHz; B = 200 Hz
typ. 1
<
4
D.C. current gain
hFE
hFE
-IC= 2 mA; -VCE = 5 mA ; total range
A selections
B selections
125 to 800
125 to 250
220 to 475
420 to 800
hFE
hFE
C selections
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
Rectron products are not designed, intended or authorized for use in medical,
life-saving implant or other applications intended for life-sustaining or other rela-
ted applications where a failure or malfunction of component or circuitry may di-
rectly or indirectly cause injury or threaten a life without expressed written appr-
oval of Rectron Inc. Customers using or selling Rectron components for use in
such applications do so at their own risk and shall agree to fully indemnify Rect-
ron Inc and its subsidiaries harmless against all claims, damages and expendit-
ures.
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