BC847C [RECTRON]

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN); SOT- 23双极晶体管晶体管( NPN )
BC847C
型号: BC847C
厂家: RECTRON SEMICONDUCTOR    RECTRON SEMICONDUCTOR
描述:

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)
SOT- 23双极晶体管晶体管( NPN )

晶体 小信号双极晶体管 光电二极管 放大器
文件: 总2页 (文件大小:452K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BC847C  
SOT-23 BIPOLAR TRANSISTORS  
TRANSISTOR(NPN)  
FEATURES  
* Power dissipation  
PCM :  
0.225  
W (Tamb=25OC) Note1  
Collector current  
ICM :  
Collector-base voltage  
*
*
*
0.1  
50  
A
V
:
V
CBO  
SOT-23  
Operating and storage junction temperature range  
T ,Tstg: -55OC to +150OC  
J
COLLECTOR  
3
BASE  
0.055(1.40)  
0.047(1.20)  
MECHANICAL DATA  
* Case: Molded plastic  
1
2
EMITTER  
* Epoxy: UL 94V-O rate flame retardant  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
0.006(0.15)  
0.003(0.08)  
0.043(1.10)  
0.035(0.90)  
0.020(0.50)  
0.012(0.30)  
0.004(0.10)  
0.000(0.00)  
* Weight: 0.008 gram  
0.100(2.55)  
0.089(2.25)  
0.020(0.50)  
0.012(0.30)  
1
2
0.019(2.00)  
0.071(1.80)  
0.118(3.00)  
0.110(2.80)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25OC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
3
Dimensions in inches and (millimeters)  
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )  
CHARACTERISTICS  
SYMBOL  
MIN  
MAX  
UNITS  
Collector - base breakdown voltage (I = 10µA, I =0)  
V
50  
45  
6
-
-
V
V
C
E
CBO  
Collector - emitter breakdown voltage (I = 10mA, I =0)  
V
CEO  
C
B
Emitter - base breakdown voltage (I = 10µA, I =0)  
V
-
V
E
C
EBO  
Collector cut - off current (V = 50V, I =0)  
I
-
0.1  
µA  
CB  
E
CBO  
Collector cut - off current (V = 45V, I =0)  
I
-
-
0.1  
0.1  
µA  
µA  
CE  
B
CEO  
Emitter cut - off current (V = 5V, I =0)  
I
EB  
C
EBO  
DC current gain (V = 5V, I = 2mA)  
h
420  
800  
0.5  
1.1  
-
-
CE  
C
FE(1)  
Collector - emitter saturation voltage (I = 100mA, I = 5mA)  
V
-
-
V
V
C
B
CE(sat)  
Base - emitter saturation voltage (I = 100mA, I = 5mA)  
V
C
B
BE(sat)  
Transition frequency (V = 5V, I = 10mA, f= 100MHZ)  
f
T
CE  
C
100  
MHZ  
DEVICE MARKING  
BC847C  
1G  
2007-3  
Notes: 1. Transistor mounted on an FR4 Printed-circuit board.  
2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.  
DISCLAIMER NOTICE  
Rectron Inc reserves the right to make changes without notice to any product  
specification herein, to make corrections, modifications, enhancements or other  
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-  
lity for any errors or inaccuracies. Data sheet specifications and its information  
contained are intended to provide a product description only. "Typical" paramet-  
ers which may be included on RECTRON data sheets and/ or specifications ca-  
n and do vary in different applications and actual performance may vary over ti-  
me. Rectron Inc does not assume any liability arising out of the application or  
use of any product or circuit.  
Rectron products are not designed, intended or authorized for use in medical,  
life-saving implant or other applications intended for life-sustaining or other rela-  
ted applications where a failure or malfunction of component or circuitry may di-  
rectly or indirectly cause injury or threaten a life without expressed written appr-  
oval of Rectron Inc. Customers using or selling Rectron components for use in  
such applications do so at their own risk and shall agree to fully indemnify Rect-  
ron Inc and its subsidiaries harmless against all claims, damages and expendit-  
ures.  

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