BAT54 [RECTRON]
SCHOTTKY BARRIER DIODE; 肖特基二极管
| 型号： | BAT54 |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | SCHOTTKY BARRIER DIODE |
| 文件： | 总2页 (文件大小：20K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
BAT54
SCHOTTKY BARRIER DIODE
FEATURES
* Very low turn-on voltage
* Fast switching
* For protecting the P/N junction guard ringagainst excessive
voltage, such as electrostatic dis-charges
* Surface mounting device
SOT-23
MECHANICAL DATA
(C)
* Epoxy : Device has UL flammability classification 94V-0
* Weight : apporx. 0.008g
(B)
(A)
(A)
(C)
(A).NC
(B).ANODE
(C).CATHODE
(
)
)
(
)
)
.055 1.40
.028 0.70
(
(
.020 0.50
.047 1.20
(
)
.102 2.60
.094 (2.40)
R0.05
(
)
.002
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
(
)
)
.045 1.15
(
.033 0.85
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
UNITS
Volts
mA
BAT54
30
V
RRM
IF
Repetitive Peak Reverse Voltage
Forward Continuous Current
200
Repetitive Peak Forward Current
IFRM
300
mA
IFSM
600
230
mA
Surge Forward Current
Total Power Dissipation
PD
m W
0 C
T J
125
Junction Temperature
-65 to + 150
0 C
Storage Temperature Range
T
STG
2001-12
ELECTRICAL CHARACTERISTICS (At T
A
= 25oC unless otherwise noted)
SYMBOL
V(BR)R
Value
Unit
V
Testing Condition
CHARACTERISTICS
Reverse Breakdown Voltage
30
Ir=10uA
240
VF(1)
VF(2)
mV
If=0.1mA
If=1mA
320
400
mV
mV
IF=10mA
Forward Voltage
Reverse Current
VF(3)
VF(4)
500
mV
mV
If=30mA
1000
If=100mA
VF(5)
IR
2.0
10
5
uA
pF
nS
Vr=25V
Total Capacitance
Vr=1V,f=1MHZ
CT
Trr
Reverse Recovery Time
If=Ir=10mA,RL=100 ohm, measured at ir=1mA
CHARACTERISTIC CURVES
FIG. 1 - FORWARD CURRENT
& FORWARD VOLTAGE
FIG. 2 -
200
DIODE CAPACITANCE
250
200
150
100
60
40
20
10
6
4
100
50
0
2
1
.1
.2 .4
1.0
2
4
10 20 40 100
REVERSE VOLTAGE, ( V )
800
FORWARD VOLTAGE,VF (mV )
0
200
400
600
1000
RECTRON
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