BA159 [RECTRON]
FAST RECOVERY RECTIFIER VOLTAGE RANGE 400 to 1000 Volts CURRENT 1.0 Ampere; 快速恢复整流电压范围400 〜1000伏电流1.0安培
| 型号： | BA159 |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | FAST RECOVERY RECTIFIER VOLTAGE RANGE 400 to 1000 Volts CURRENT 1.0 Ampere |
| 文件： | 总2页 (文件大小：29K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BA157
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
BA159
FAST RECOVERY RECTIFIER
VOLTAGE RANGE 400 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
* Fast switching
* Low leakage
* Low forward voltage drop
* High current capability
* High surge capability
* High reliability
DO-41
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
.034 (0.9)
DIA.
.028 (0.7)
1.0 (25.4)
MIN.
* Weight: 0.33 gram
.205 (5.2)
.166 (4.2)
.107 (2.7)
DIA.
.080 (2.0)
1.0 (25.4)
MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
BA157
400
BA158
BA159
SYMBOL
UNITS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
1000
600
V
V
RRM
RMS
Volts
Volts
Volts
280
420
600
700
400
Maximum DC Blocking Voltage
V
DC
O
1000
Maximum Average Forward Rectified Current
I
1.0
30
Amps
Amps
at TA
= 75oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
Typical Junction Capacitance (Note 2)
C
J
15
pF
0 C
Operating and Storage Temperature Range
T
J
, TSTG
-65 to + 150
ELECTRICAL CHARACTERISTICS (At TA
= 25oC unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 1.0A DC
Maximum DC Reverse Current
SYMBOL
UNITS
Volts
BA157
BA158
1.3
BA159
V
F
5.0
uAmps
uAmps
at Rated DC Blocking Voltage T
Maximum Full Load Reverse Current Full Cycle
Average, .375” (9.5mm) lead length at T
= 55oC
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: I = 0.5A, I = -1.0A, IRR = -0.25A
2. Measured at 1 MH and applied reverse voltage of 4.0 volts
A
= 25oC
I
R
100
250
L
trr
nSec
F
R
2002-3
Z
(
)
RATING AND CHARACTERISTIC CURVES BA157 THRU BA159
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
40
30
20
10
0
1.0
.8
8.3ms Single Half Sine-Wave
(JEDED Method)
.6
.4
Single Phase
Half Wave 60Hz
Resistive or
.2
0
Inductive Load
1
2
4
6
8 10
20
40 6080 100
0
25
50
75
100 125 150 175
AMBIENT TEMPERATURE, (
)
NUMBER OF CYCLES AT 60Hz
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
10
6
4
20
10
2
3.0
1.0
1.0
.6
.4
T
= 25
J
0.3
0.1
T
= 25
.2
.1
J
Pulse Width=300uS
1% Duty Cycle
.06
.04
.03
.01
.02
.01
0.4 0.6
0.8
1.0 1.2
1.4
1.6 1.8
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
FIG. 6 - TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTIC
200
100
50
10
trr
NONINDUCTIVE
NONINDUCTIVE
+0.5A
60
40
( - )
D.U.T
0
( + )
PULSE
GENERATOR
(NOTE 2)
25 Vdc
(approx)
( - )
-0.25A
20
1
OSCILLOSCOPE
(NOTE 1)
( + )
10
6
NON-
INDUCTIVE
T
= 25
J
-1.0A
1cm
SET TIME BASE FOR
50/100 ns/cm
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
4
2. Rise Time = 10ns max. Souce Impedance =
50 ohms.
2
1
.1 .2 .4
1.0
2
4
10 20 40 100
REVERSE VOLTAGE, ( V )
RECTRON
相关型号：
BA159-E2
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
VISHAY
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