1N4448W [RECTRON]
SMALL SIGNAL DIODE VOLTAGE RANGE 75 Volts CURRENT 250 mAmpere; 小信号二极管电压范围75伏特电流250 mAmpere
| 型号： | 1N4448W |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | SMALL SIGNAL DIODE VOLTAGE RANGE 75 Volts CURRENT 250 mAmpere |
| 文件： | 总2页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
REECCTTRROONN
TECHNICAL SPECIFICATION
SEMICONDUCTOR
1N4448W
SMALL SIGNAL DIODE
VOLTAGE RANGE 75 Volts CURRENT 250 mAmpere
FEATURES
* Fast Switching Speed
* Surface Mount Package ldeally Suited for
Automatic Insertion
* For General Purpose Switching Applicationgs
* High Conductance
SOD-123
MECHANICAL DATA
* Case: Molded plastic
.110(2.800)
.102(2.600)
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
.067(1.700)
.059(1.500)
* Weight: 0.01 gram
.152(3.850)
.140(3.550)
.049(1.250)
.041(1.050)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.004(.100)
.000(0.00)
REF .020(0.500)
Dimensions in inches and (millimeters)
O
MAXIMUM RATINGS (@ T
A
=25 C unless otherwise noted)
SYMBOL
VRM
1N4448W
100
UNITS
RATINGS
Volts
Non-Repetitive Peak Reverse Voltage
Maximum Repetitive Peak Reverse Voltage
Maximum Working Peak reverse Voltage
Maximum DC Blocking Voltage
VRRM
VRWM
VR
75
Volts
VRMS
IFM
Volts
Maximum RMS Voltage
53
Maximum Forward Comtinuous Current
Maximum Average Forward Rectified Current
Non-Repetitive Peak Forward Surge Current
500
250
4.0
2.0
mAmps
mAmps
IO
@t=1.0uS
@t=1.0S
IFSM
Amps
Typical Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Maximum Power Dissipation (Note 3)
Typical Thermal Resistance
Trr
CJ
PD
4
nS
pF
4
400
mW
OC/W
OC
R
ΘJA
315
Operating and Storage Temperature Range
TJ, TSTG
-65 to + 150
O
ELECTRICAL CHARACTERISTICS (@T
A
=25 C unless otherwise noted)
SYMBOL
1N4448W
UNITS
Volts
CHARACTERISTICS
@IF=1.0mA
@IF=10mA
@IF=50mA
@IF=150mA
0.715
0.855
1.0
Maximum Instantaneous Forward Voltage
VF
25
@VR=20V
@VR=75V
25
nAmps
uAmps
Maximum Instantaneous Reverse Current
IR
2.5
.
NOTES : 1. Measured at I
F
=I
R
=10mA, IRR=0.1I
R
And R
L
=100
.
2006-3
2. Measured at 1MHz and applied reverse voltage of 0 volts.
3. Part mounted on FR-4 PC board with minimunm recommended pad layout.
RATING AND CHARACTERISTICS CURVES ( 1N4448W )
100
300
200
Ta=25OC
10
Ta=50OC
Ta=85OC
Ta=0OC
Ta=30OC
1
100
0.1
0
0
1000
400
V , FORWARD VOLTAGE (mV)
F
600
800
0
25
50
75
100
125
150
200
T
, AMBIENT TEMPERATURE (OC)
A
FIG.1 Power Derating Curve
FIG.2 Typical Forward Chatacteristics
10.0
2.5
2.0
1.5
Ta=100OC
Ta=75OC
1.0
0.10
Ta=50OC
Ta=25OC
1.0
0.5
0
Ta=0OC
0.01
Ta=-30OC
0.001
0
40
60
80
20
0
2
4
6
8
10
V
, REVERSE VOLTAGE (V)
I , FORWARD CURRENT (mA)
R
F
FIG.3 Typical Reverse Characteristics
FIG.4 Reverse Recovery Time vs.Forward Current
4
3
2
1
0
f=1 MHz
5
3
0
1
2
4
6
I
, FORWARD CURRENT (mA)
F
FIG.5 Total Capacicance vs.Reverse Voltage
RECTRON
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