1N4003 [RECTRON]
SILICON RECTIFIER; 硅整流
| 型号： | 1N4003 |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | SILICON RECTIFIER |
| 文件： | 总2页 (文件大小：227K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N4001
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N4007
SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
* Low cost
* Low leakage
* Low forward voltage drop
* High current capability
DO-41
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.33 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 UNITS
V
V
RRM
RMS
Volts
Volts
Volts
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
Maximum DC Blocking Voltage
V
DC
O
100
1000
Maximum Average Forward Rectified Current
I
1.0
Amps
Amps
at TA
= 75oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
30
15
Typical Junction Capacitance (Note)
Typical Thermal Resistance
CJ
pF
0C/ W
0 C
R θ J A
, TSTG
50
T
J
-65 to + 175
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (At TA
= 25oC unless otherwise noted)
SYMBOL
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 UNITS
CHARACTERISTICS
1.1
5.0
50
Volts
V
F
Maximum Instantaneous Forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
@T
A
A
= 25oC
= 100oC
uAmps
I
R
Maximum Full Load Reverse Current Average, Full Cycle
.375” (9.5mm) lead length at T
= 75oC
NOTES : Measured at 1 MH and applied reverse voltage of 4.0 volts
30
uAmps
1998-8
L
Z
Back
RECTRON
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