1H6 [RECTRON]
HIGH EFFICIENCY RECTIFIER; 高效率整流型号: | 1H6 |
厂家: | RECTRON SEMICONDUCTOR |
描述: | HIGH EFFICIENCY RECTIFIER |
文件: | 总2页 (文件大小:30K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1H1
THRU
1H8
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
HIGH EFFICIENCY RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
* Low power loss, high efficiency
* Low leakage
* Low forward voltage
* High current capability
* High speed switching
* High surge capability
* High reliability
R-1
MECHANICAL DATA
* Case: Molded plastic
(
)
.025 0.65
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
DIA.
(
)
.021 0.55
(
)
.787 20.0
MIN.
* Weight: 0.12 gram
(
)
.126 3.2
(
)
.106 2.7
(
)
.102 2.6
DIA.
(
)
.091 2.3
(
)
.787 20.0
MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
1H1
50
1H2
100
1H3
200
1H4
300
1H5 1H5P 1H6
1H7
1H8 UNITS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Volts
Volts
Volts
V
V
RRM
RMS
400
400
600
800
560
800
1000
35
50
70
140
200
210
300
280
400
280
400
420
600
700
100
1000
Maximum DC Blocking Voltage
V
DC
Maximum Average Forward Rectified Current
I
O
1.0
25
Amps
Amps
at TA
= 25oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
Typical Junction Capacitance (Note 2)
C
J
15
12
pF
0 C
Operating and Storage Temperature Range
T
J
, TSTG
-65 to + 150
ELECTRICAL CHARACTERISTICS (At TA
= 25oC unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 1.0A DC
Maximum DC Reverse Current
SYMBOL
1H1
1H2
1.0
1H3
1H4
1H5 1H5P 1H6
1.0
1H7
1.7
1H8 UNITS
Volts
V
F
1.3
5.0
uAmps
uAmps
at Rated DC Blocking Voltage TA
= 25oC
I
R
Maximum Full Load Reverse Current
100
Average, Full Cycle .375” (9.5mm) lead length at TL
= 55oC
Maximum Reverse Recovery Time (Note 1)
trr
75
nSec
50
NOTES : 1. Test Conditions: I
F
= 0.5A, IR = -1.0A, IRR = -0.25A
2001-5
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
(
)
RATING AND CHARACTERISTIC CURVES 1H1 THRU 1H8
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
50
10
trr
NONINDUCTIVE
NONINDUCTIVE
+0.5A
2.0
1.0
0
( - )
PULSE
GENERATOR
(NOTE 2)
D.U.T
Single Phase
Half Wave 60Hz
Resistive or
0
( + )
25 Vdc
(approx)
( - )
-0.25A
Inductive Load
1
OSCILLOSCOPE
(NOTE 1)
( + )
NON-
INDUCTIVE
-1.0A
1cm
1
Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
NOTES:
SET TIME BASE FOR
10/20 ns/cm
0
25 50 75 100125150175
AMBIENT TEMPERATURE (
)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
10
10
T
= 150
= 100
J
1.0
T
J
300/400V
50/100/200V
1.0
.1
.1
600/800/1000V
T
= 25
J
T
= 25
J
.01
Pulse Width = 300uS
1% Duty Cycle
.01
.001
0
20
40
60
80
100
120 140
0
.2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
35
200
100
60
30
8.3ms Single Half Sine-Wave
(
)
JEDEC Method
25
20
15
10
40
20
1H1~1H5
10
T
= 25
J
6
4
1H6~1H8
5
0
2
1
.1 .2 .4
1.0
2
4
10 20 40 100
1
2
5
10
20
50
100
REVERSE VOLTAGE, ( V )
NUMBER OF CYCLES AT 60Hz
RECTRON
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