1F7 [RECTRON]
FAST RECOVERY RECTIFIER; 快速恢复整流
| 型号： | 1F7 |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | FAST RECOVERY RECTIFIER |
| 文件： | 总2页 (文件大小：29K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1F1
THRU
1F7
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FAST RECOVERY RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
* Fast switching
* Low leakage
* Low forward voltage drop
* High current capability
* High currenf surge
* High reliability
R-1
MECHANICAL DATA
* Case: Molded plastic
(
)
.025 0.65
DIA.
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
(
)
.021 0.55
(
)
.787 20.0
MIN.
* Weight: 0.19 gram
(
)
.126 3.2
(
)
.106 2.7
(
)
.102 2.6
DIA.
(
)
.091 2.3
(
)
.787 20.0
MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
1F1
50
1F2
100
1F3
200
1F4
400
1F5
600
1F6
800
1F7
UNITS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
RRM
RMS
1000
Volts
Volts
Volts
35
50
70
140
200
280
400
420
600
560
800
700
100
1000
Maximum DC Blocking Voltage
V
DC
Maximum Average Forward Rectified Current
I
O
1.0
25
Amps
Amps
at TA
= 25oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
Typical Junction Capacitance (Note 2)
C
J
15
pF
0 C
Operating and Storage Temperature Range
T
J
, TSTG
-55 to + 150
ELECTRICAL CHARACTERISTICS (At TA
= 25oC unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 1.0A DC
Maximum DC Reverse Current
SYMBOL
1F1
1F2
1F3
1F4
1.3
1F5
250
1F6
1F7
UNITS
Volts
V
F
5.0
uAmps
uAmps
at Rated DC Blocking Voltage T
Maximum Full Load Reverse Current Full Cycle Average,
.375” (9.5mm) lead length at T
= 55oC
A
= 25oC
I
R
100
L
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Reverse Recovery Test Conditions: I
trr
150
500
nSec
F
= 0.5A, IR = -1.0A, IRR = -0.25A
2002-11
2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts
(
)
RATING AND CHARACTERISTIC CURVES 1F1 THRU 1F7
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
1.0
.8
.6
.4
.2
0
200
100
8.3ms Single Half Sine-Wave
(JEDED Method)
50
30
20
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
10
1
5
10
50
100
0
25
50
75 100 125 150 175
NUMBER OF CYCLES AT 60Hz
AMBIENT TEMPERATURE, (
)
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
20
10
10
6
4
2
T
= 50
= 25
J
J
T
= 25
J
3.0
1.0
0.3
0.1
1.0
.6
.4
T
.2
.1
.06
.04
Pulse Width=300uS
1% Duty Cycle
.03
.01
.02
.01
0.4 0.6
0.8 1.0
1.2
1.4 1.6 1.8
0
20
40
60
80
100 120 140
INSTANTANEOUS FORWARD VOLTAGE, (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
FIG. 6 - TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTIC
200
50
10
NONINDUCTIVE
trr
NONINDUCTIVE
+0.5A
100
60
( - )
D.U.T
0
40
( + )
PULSE
25 Vdc
(approx)
( - )
GENERATOR
-0.25A
20
(NOTE 2)
1
OSCILLOSCOPE
(NOTE 1)
( + )
NON-
INDUCTIVE
10
6
T
= 25
J
-1.0A
1cm
SET TIME BASE FOR
50/100 ns/cm
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
4
2. Rise Time = 10ns max. Souce Impedance =
50 ohms.
2
1
.1 .2 .4
1.0
2
4
10 20 40 100
REVERSE VOLTAGE, ( V )
RECTRON
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