1A4G-T [RECTRON]

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, PLASTIC, R-1, 2 PIN;
1A4G-T
型号: 1A4G-T
厂家: RECTRON SEMICONDUCTOR    RECTRON SEMICONDUCTOR
描述:

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, PLASTIC, R-1, 2 PIN

二极管
文件: 总2页 (文件大小:21K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1A1G  
THRU  
1A7G  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
GLASS PASSIVATED JUNCTION  
SILICON RECTIFIER  
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere  
FEATURES  
* High reliability  
* Low leakage  
* Low forward voltage drop  
* High current capability  
* Glass passivated junction  
R-1  
MECHANICAL DATA  
* Case: Molded plastic black body  
* Epoxy: Device hasUL flammability classification 94V-O  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
(
)
.025 0.65  
DIA.  
(
)
.021 0.55  
(
)
.787 20.0  
MIN.  
* Weight: 0.19 gram  
(
)
.126 3.2  
(
)
.106 2.7  
(
)
.102 2.6  
DIA.  
(
)
.091 2.3  
(
)
.787 20.0  
MIN.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
1A1G  
50  
1A2G  
100  
1A3G  
200  
1A4G  
400  
1A5G  
600  
1A6G  
800  
1A7G  
1000  
UNITS  
Volts  
Volts  
Volts  
V
V
RRM  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
RMS  
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
V
DC  
O
100  
1000  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
I
1.0  
25  
Amps  
Amps  
at TA  
= 25oC  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
C
J
15  
60  
pF  
0C/W  
0 C  
Typical Junction Capacitance (Note)  
Typical Thermal Resistance  
R θ J A  
, TSTG  
Operating and Storage Temperature Range  
T
J
-65 to + 175  
ELECTRICAL CHARACTERISTICS (At TA  
= 25oC unless otherwise noted)  
CHARACTERISTICS  
SYMBOL  
1A1G  
1A2G  
1A3G  
1A4G  
1.1  
1A5G  
1A6G  
1A7G UNITS  
Volts  
Maximum Instantaneous Forward Voltage at 1.0A DC  
VF  
@T  
A
A
= 25oC  
= 100oC  
5.0  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
@T  
uAmps  
50  
I
R
Maximum Full Load Reverse Current Full Cycle Average  
.375” (9.5mm) lead length at T  
= 75oC  
uAmps  
2001-5  
30  
L
NOTES : Measured at 1 MH and applied reverse voltage of 4.0 volts  
Z
(
)
RATING AND CHARACTERISTIC CURVES 1A1G THRU 1A7G  
FIG. 1 - TYPICAL FORWARD CURRENT  
DERATING CURVE  
FIG. 2 - TYPICAL INSTANTANEOUS FORWARD  
CHARACTERISTICS  
1.0  
.8  
20  
10  
4
2
1.0  
.6  
.4  
.4  
.2  
.1  
T
= 25  
J
Single Phase  
Half Wave 60Hz  
Resistive or  
Pulse Width=300uS  
1% Duty Cycle  
.2  
0
.04  
.02  
.01  
Inductive Load  
0
25 50 75 100 125 150 175  
.6  
.8  
1.0  
1.2  
1.4 1.5  
AMBIENT TEMPERATURE, (  
)
INSTANTANEOUS FORWARD VOLTAGE, (V)  
FIG. 3 - MAXIMUM NON-REPETITIVE FORWARD  
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS  
SURGE CURRENT  
50  
10  
8.3ms Single Half Sine-Wave  
(JEDED Method)  
T
= 25  
J
40  
1.0  
0.1  
30  
20  
10  
0
.01  
6
1
2
4
810 20 40 6080100  
0
20  
40 60  
80 100 120 140  
NUMBER OF CYCLES AT 60Hz  
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)  
FIG. 5 - TYPICAL JUNCTION CAPACITANCE  
200  
100  
60  
T
= 25  
J
40  
20  
10  
6
4
2
1
.1 .2 .4  
1.0  
2
4
10 20 40 100  
REVERSE VOLTAGE, ( V )  
RECTRON  

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