VTO-SK-S-4P [QUARTZCOM]

SMD VC-TCXO Sine wave Wide frequency range up to 400 MHz; SMD VC- TCXO正弦波宽的频率范围高达400 MHz
VTO-SK-S-4P
型号: VTO-SK-S-4P
厂家: QUARTZCOM THE COMMUNICATIONS COMPANY    QUARTZCOM THE COMMUNICATIONS COMPANY
描述:

SMD VC-TCXO Sine wave Wide frequency range up to 400 MHz
SMD VC- TCXO正弦波宽的频率范围高达400 MHz

石英晶振 温度补偿晶振
文件: 总1页 (文件大小:159K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
VTO-SK-S-4p  
SMD VC-TCXO  
Sine wave  
ƒ
ƒ
ƒ
ƒ
Applications: telecom infrastructure, broadband access, navigation  
Output signal sine wave  
Wide frequency range up to 400 MHz  
Low phase noise  
Features  
Specification  
Parameter  
VTO-SK-3S-4p  
VTO-SK-5S-4p  
Frequency range  
10 ~ 400 MHz  
Standard frequencies  
Frequency stability:  
vs. temperature  
10.000, 13.000, 19.440, 20.000, 26.000, 50.400 & 80.000MHz  
≤ ±0.5 ~ ±5.0 ppm  
vs. supply & load change  
vs. aging  
≤ ±0.2 ppm  
≤ ±1.0 ppm  
≤ ±1.0 ppm  
±5 %  
1st year  
@ +25 °C  
Frequency tolerance ex. factory  
Supply voltage  
+3.3 V ±5 %  
+5.0 V ±5 %  
Supply current  
10 ~ 60 mA  
Output signal  
sine wave  
Output level  
0 dBm  
3 ~ 7 dBm  
Output load  
50  
Frequency pulling range  
Voltage control  
±5 ~ ±15 ppm  
+1.65 V ±1.35 V  
+2.5 V ±2.0 V  
Phase noise @ 50 MHz carrier frequency  
-142 dBc/Hz  
-150 dBc/Hz  
@
@
1 kHz  
10 kHz  
-20 ~ +70 °C  
-40 ~ +85 °C  
commercial application  
industrial application  
Operating temperature range  
Storage temperature range  
Packaging units  
-55 ~ +125 °C  
tape & reel  
tray  
500 pieces  
50 pieces  
Customer specifications on request  
Pin function  
Example for solder pattern  
# 1 Vc Voltage control  
# 7 GND  
# 8 Output  
# 14 Vdc  
Do not design any conductive path between the pattern  
Example for IR reflow soldering temperature  
2002/95/EC RoHS compliant  
02 May. 10  
QuartzCom AG  
sales@quartzcom.com  
QuartzCom Asia  
sales-asia@quartzcom.com  
QuartzCom USA  
sales-usa@quartzcom.com  
www.quartzcom.com  

相关型号:

VTO-SW-S-8P

SMD VC-TCXO Sine wave Wide frequency range up to 500 MHz
QUARTZCOM

VTO110

Three Phase Full Controlled Rectifier Bridge
IXYS

VTO110-12IO7

Silicon Controlled Rectifier, 58A I(T)RMS, 110000mA I(T), 1200V V(DRM), 1200V V(RRM), 6 Element, MODULE-11
IXYS

VTO110-14IO7

THYRISTOR MODULE|3-PH FULL-WAVE|FULLY CNTLD|1.4KV V(RRM)|110A I(T)
ETC

VTO110-16IO7

THYRISTOR MODULE|3-PH FULL-WAVE|FULLY CNTLD|1.6KV V(RRM)|110A I(T)
ETC

VTO175

Three Phase Full Controlled Rectifier Bridge
IXYS

VTO175-12IO7

THYRISTOR MODULE|3-PH FULL-WAVE|FULLY CNTLD|1.2KV V(RRM)|167A I(T)
ETC

VTO175-14IO7

THYRISTOR MODULE|3-PH FULL-WAVE|FULLY CNTLD|1.4KV V(RRM)|167A I(T)
ETC

VTO175-16IO7

THYRISTOR MODULE|3-PH FULL-WAVE|FULLY CNTLD|1.6KV V(RRM)|167A I(T)
ETC

VTO39

Three Phase Rectifier Bridge
IXYS

VTO39-06IO7

Silicon Controlled Rectifier, 25.12A I(T)RMS, 16000mA I(T), 600V V(DRM), 600V V(RRM), 6 Element,
LITTELFUSE

VTO39-08HO7

Silicon Controlled Rectifier, 25.12A I(T)RMS, 16000mA I(T), 800V V(DRM), 800V V(RRM), 6 Element,
LITTELFUSE