4N38.SD [QT]
Transistor Output Optocoupler, 1-Element, 5300V Isolation,;型号: | 4N38.SD |
厂家: | QT OPTOELECTRONICS |
描述: | Transistor Output Optocoupler, 1-Element, 5300V Isolation, |
文件: | 总6页 (文件大小:90K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
H11D1
H11D2
H11D3
H11D4
4N38
DESCRIPTION
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting
diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
FEATURES
• High Voltage
- H11D1, H11D2, BVCER = 300 V
- H11D3, H11D4, BVCER = 200 V
• High isolation voltage
- 5300 VAC RMS - 1 minute
- 7500 VAC PEAK - 1 minute
• Underwriters Laboratory (UL) recognized File# E90700
ANODE
CATHODE
N/C
1
6
BASE
2
3
5
4
COLLECTOR
EMITTER
APPLICATIONS
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
• Appliance sensor systems
• Industrial controls
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Units
TOTAL DEVICE
TSTG
-55 to +150
°C
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
TOPR
TSOL
-55 to +100
260 for 10 sec
260
°C
°C
mW
PD
IF
3.5
mW/°C
EMITTER
80
mA
*Forward DC Current
*Reverse Input Voltage
*Forward Current - Peak (1µs pulse, 300pps)
*LED Power Dissipation @ TA = 25°C
Derate above 25°C
VR
6.0
3.0
V
A
IF(pk)
150
1.41
mW
mW/°C
PD
8/9/00
200046A
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
H11D1, H11D2, H11D3, H11D4, 4N38
ABSOLUTE MAXIMUM RATINGS (Cont.)
Parameter
Symbol
Value
Units
mW
DETECTOR
300
*Power Dissipation @ TA = 25°C
Derate linearly above 25°C
PD
4.0
300
200
80
mW/°C
H11D1 - H11D2
H11D3 - H11D4
4N38
*Collector to Emitter Voltage
*Collector Base Voltage
VCER
H11D1 - H11D2
H11D3 - H11D4
4N38
300
200
80
V
VCBO
H11D1 - H11D2
H11D3 - H11D4
*Emitter to Collector Voltage
Collector Current (Continuous)
VECO
7
100
mA
ELECTRICAL CHARACTERISTICS (T = 25 Unless otherwise specified.)
°C
A
INDIVIDUAL COMPONENT CHARACTERISTICS
Characteristic
EMITTER
Test Conditions Symbol
Device
Min
Typ**
Max
Unit
(IF = 10 mA)
VF
ALL
1.15
1.5
V
*Forward Voltage
Forward Voltage Temp.
Coefficient
!VF
!TA
BVR
ALL
-1.8
mV/°C
Reverse Breakdown Voltage
(IR = 10 µA)
(VF = 0 V, f = 1 MHz)
(VF = 1 V, f = 1 MHz)
(VR = 6 V)
ALL
ALL
6
25
50
V
pF
pF
µA
Junction Capacitance
CJ
IR
ALL
65
*Reverse Leakage Current
DETECTOR
ALL
0.05
10
(RBE = 1 M")
H11D1/2
H11D3/4
4N38
300
200
80
BVCER
BVCEO
*Breakdown Voltage
Collector to Emitter
(IC = 1.0 mA, IF = 0)
(No RBE) (IC = 1.0 mA)
H11D1/2
H11D3/4
4N38
300
200
80
V
*Collector to Base
(IC = 100 µA, IF = 0)
BVCBO
Emitter to Base
BVEBO
BVECO
4N38
7
(IE = 100 µA , IF = 0)
Emitter to Collector
ALL
7
10
(VCE = 200 V, IF = 0, TA = 25°C)
(VCE = 200 V, IF = 0, TA = 100°C)
(VCE = 100 V, IF = 0, TA = 25°C)
(VCE = 100 V, IF = 0, TA = 100°C)
100
250
100
250
50
nA
µA
nA
µA
nA
H11D1/2
*Leakage Current
Collector to Emitter
(RBE = 1 M")
ICER
H11D3/4
4N38
(No RBE) (VCE = 60 V, IF = 0, TA = 25°C)
ICEO
Notes
* Parameters meet or exceed JEDEC registered data (for 4N38 only)
** All typical values at TA = 25°C
8/9/00
200046A
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
H11D1, H11D2, H11D3, H11D4, 4N38
TRANSFER CHARACTERISTICS
DC Characteristic
Test Conditions Symbol
Device
H11D1
H11D2
H11D3
H11D4
4N38
Min
Typ**
Max
Unit
EMITTER
(IF = 10 mA, VCE = 10 V)
2 (20)
Current Transfer Ratio
Collector to Emitter
(RBE = 1 M")
CTR
mA (%)
1 (10)
2 (20)
(IF = 10 mA, VCE = 10 V)
(IF = 10 mA, IC = 0.5 mA)
H11D1/2/3/4
4N38
0.1
0.40
1.0
*Saturation Voltage
(RBE = 1 M") VCE (SAT)
(IF = 20 mA, IC = 4 mA)
V
TRANSFER CHARACTERISTICS
Characteristic
Test Conditions Symbol Device
Min
Typ**
Max
Unit
SWITCHING TIMES
(VCE =10 V, ICE = 2 mA)
(RL = 100 ")
ton
toff
ALL
ALL
5
5
Non-Saturated Turn-on Time
Turn-off Time
µs
ISOLATION CHARACTERISTICS
Characteristic
Test Conditions Symbol Device
Min
5300
7500
1011
Typ**
Max
Unit
(VACRMS)
(VACPEAK)
"
Isolation Voltage
(II-O #$1 µA, 1 min.)
VISO
ALL
Isolation Resistance
Isolation Capacitance
(VI-O = 500 VDC)
(f = 1 MHz)
RISO
CISO
ALL
ALL
0.5
pF
Notes
* Parameters meet or exceed JEDEC registered data (for 4N38 only)
** All typical values at TA = 25°C
Fig.1 LED Forward Voltage vs. Forward Current
Fig.2 Normalized Output Characteristics
1.8
Normalized to:
V
= 10 V
= 10 mA
6
= 10 Ω
BE
CE
1.7
I
F
10
R
T
= 25˚C
1.6
A
I
I
= 50 mA
= 10 mA
F
F
1.5
1
1.4
T
T
= 55˚C
= 25˚C
A
A
I
= 5 mA
F
1.3
1.2
1.1
1.0
0.1
0.01
T
= 100˚C
A
0.1
1
10
100
1
10
100
I
- LED FORWARDCURRENT (mA)
V
- COLLECTOR VOLTAGE (V)
CE
F
8/9/00
200046A
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
H11D1, H11D2, H11D3, H11D4, 4N38
Fig.3 Normalized Output Current vs. LED Input Current
Fig.4 Normalized Output Current vs.Temperature
10
Normalized to:
Normalized to:
= 10 V
V
CE
= 10 V
V
CE
I
R
= 10 mA
6
= 10 Ω
F
I
R
= 10 mA
6
= 10 Ω
F
BE
BE
I
I
= 20 mA
= 10 mA
F
F
T
= 25˚C
A
T
= 25˚C
A
1
1
I
= 5 mA
F
0.1
0.01
0.1
-60
1
10
-40
-20
0
20
40
60
80
100
I
- LED INPUT CURRENT (mA)
T - AMBIENT TEMPERATURE (˚C)
A
F
Fig.5 Normalized Dark Current vs. Ambient Temperature
Normalized Collector-Base Current vs.Temperature
10
9
8
7
6
5
4
3
2
1
0
Normalized to:
Normalized to:
V
= 100 V
V
I
R
= 10 V
10000
1000
100
10
CE
CE
6
R
T
= 10
Ω
= 10 mA
BE
F
6
= 25˚C
= 10
Ω
A
I
= 50 mA
BE
F
T
= 25˚C
A
V
CE
= 300 V
V
CE
= 100 V
V
CE
= 50 V
I
I
= 10 mA
F
F
1
= 5 mA
-40
0.1
10
20
30
T
40
50
60
70
80
90
100
110
-60
-20
T
0
20
40
60
80
100
- AMBIENT TEMPERATURE (˚C)
- AMBIENT TEMPERATURE (˚C)
A
A
8/9/00
200046A
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
H11D1, H11D2, H11D3, H11D4, 4N38
Package Dimensions (Through Hole)
Package Dimensions (Surface Mount)
0.350 (8.89)
0.330 (8.38)
3
2
1
PIN 1
ID.
PIN 1
ID.
3
2
1
0.270 (6.86)
0.240 (6.10)
0.270 (6.86)
0.240 (6.10)
4
5
6
0.350 (8.89)
0.330 (8.38)
4
5
6
0.070 (1.78)
0.045 (1.14)
0.300 (7.62)
TYP
0.070 (1.78)
0.045 (1.14)
0.200 (5.08)
0.135 (3.43)
0.200 (5.08)
0.165 (4.18)
0.016 (0.41)
0.008 (0.20)
0.020 (0.51)
MIN
0.154 (3.90)
0.100 (2.54)
0.020 (0.51)
MIN
0.016 (0.40) MIN
0.016 (0.40)
0.008 (0.20)
0.022 (0.56)
0.016 (0.41)
0.100 (2.54)
TYP
0.315 (8.00)
MIN
0.300 (7.62)
TYP
0.022 (0.56)
0.016 (0.41)
0° to 15°
0.405 (10.30)
MAX
0.100 (2.54)
TYP
Lead Coplanarity : 0.004 (0.10) MAX
Package Dimensions (0.4”Lead Spacing)
Recommended Pad Layout for
Surface Mount Leadform
3
2
1
PIN 1
ID.
0.270 (6.86)
0.240 (6.10)
0.070 (1.78)
0.060 (1.52)
4
5
6
0.350 (8.89)
0.330 (8.38)
0.415 (10.54)
0.100 (2.54)
0.070 (1.78)
0.045 (1.14)
0.295 (7.49)
0.030 (0.76)
0.004 (0.10)
MIN
0.200 (5.08)
0.135 (3.43)
0.154 (3.90)
0.100 (2.54)
0.016 (0.40)
0.008 (0.20)
0° to 15°
0.022 (0.56)
0.016 (0.41)
0.400 (10.16)
TYP
0.100 (2.54) TYP
NOTE
All dimensions are in inches (millimeters)
Call QT Optoelectronics for more information or the phone number of your nearest distributor.
United States 800-533-6786 • France 33 [0] 1.45.18.78.78 • Germany 49 [0] 89/96.30.51 • United Kingdom 44 [0] 1296 394499 • Asia/Pacific 603-7248193
www.qtopto.com
8/9/00
200046A
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
H11D1, H11D2, H11D3, H11D4, 4N38
ORDERING INFORMATION
Order Entry Identifier
Option
Description
S
.S
Surface Mount Lead Bend
Surface Mount; Tape and reel
0.4” Lead Spacing
SD
W
.SD
.W
300
300W
3S
.300
.300W
.3S
VDE 0884
VDE 0884, 0.4” Lead Spacing
VDE 0884, Surface Mount
VDE 0884, Surface Mount, Tape & Reel
3SD
.3SD
QT Carrier Tape Specifications (“D” Taping Orientation)
12.0 ± 0.1
4.0 ± 0.1
4.85 ± 0.20
Ø1.55 ± 0.05
0.30 ± 0.05
4.0 ± 0.1
1.75 ± 0.10
7.5 ± 0.1
16.0 ± 0.3
13.2 ± 0.2
9.55 ± 0.20
Ø1.6 ± 0.1
10.30 ± 0.20
User Direction of Feed
0.1 MAX
NOTE
All dimensions are in millimeters
Call QT Optoelectronics for more information or the phone number of your nearest distributor.
United States 800-533-6786 • France 33 [0] 1.45.18.78.78 • Germany 49 [0] 89/96.30.51 • United Kingdom 44 [0] 1296 394499 • Asia/Pacific 603-7248793
www.qtopto.com
8/9/00
200046A
相关型号:
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