QPA3055PS2 [QORVO]
100 W S-Band GaN Power Amplifier;
| 型号： | QPA3055PS2 |
| 厂家： | 
Qorvo |
| 描述： | 100 W S-Band GaN Power Amplifier |
| 文件： | 总26页 (文件大小：821K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPA3055P
100 W S-Band GaN Power Amplifier
Product Overview
Qorvo’s QPA3055P is a packaged, high-power S-band
amplifier fabricated on Qorvo’s production 0.25 um GaN
on SiC process (QGaN25). Covering 2.9ꢀ–ꢀ3.5 GHz, the
QPA3055P provides 100 W of saturated output power and
25 dB of large-signal gain while achieving 53% power-
added efficiency.
The QPA3055P is packaged in a 10-lead 15.2 x 15.2 mm
bolt-down package with a Cu base for superior thermal
management. It can support a variety of operating
conditions to best support system requirements. With
good thermal properties, it can support a range of bias
voltages and will perform well under both short and long
pulse operations.
Key Features
• Frequency Range: 2.9ꢀ–ꢀ3.5 GHz
• PSAT (PIN=25 dBm): 50 dBm
• PAE (PIN=25 dBm): > 53 %
The QPA3055P MMIC has DC blocking capacitors on
both RF ports, which are matched to 50 ohms. The
QPA3055P is ideal for both commercial and military radar
systems.
• Power Gain (PIN=25 dBm): 25 dB
• Bias: VD = 30 V, IDQ = 300 mA, PIN = 25 dBm
• Alt. Bias: VD = 30 V, IDQ = 1500 mA, PIN = 22 dBm
• Characterized at PW = 15 ms, DC = 30%, and PW =
100 us, DC = 10%
Lead-free and RoHS compliant.
• Package Dimensions: 15.2 x 15.2 x 3.5 mm
Evaluation board available on request.
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Functional Block Diagram
Applications
• Radar
1
10
2
3
9
8
4
5
7
6
Ordering Information
Part No.
Description
100 W S-Band GaN Power Amplifier (10
Pcs.)
QPA3055P
QPA3055PS2
Samples (2 pcs.)
Evaluation Board for QPA3055P
QPA3055PEVB1
Data Sheet Rev. B, June 2018
1 of 26
www.qorvo.com
QPA3055P
100 W S-Band GaN Power Amplifier
Absolute Maximum Ratings
Recommended Operating Conditions
Valueꢀ/ꢀRang
40 V
Parameter
Parameter
Valueꢀ/ꢀRange
30 V
Drain Voltage (VD)
Drain Voltage (VD)
Drain Current (IDQ
)
300 mA
Gate Voltage Range (VG)
Peak Drain Current (ID)
Average Drain Current (ID)
Duty Cycle
−8 to +1 V
11.7 A
Gate Voltage (VG), Typical
Operating Temperature
−2.5 V
−40 to +85 °C
5.7 A
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
50%
Gate Current (IG)
300 mA
150 W
Power Dissipation (PDISS), 85 °C
Input Power (PIN), Pulsed (15 ms, 30%),
50 ꢁ, VD=28 V, IDQ=300 mA, 85 °C
Input Power (PIN), Pulsed (15 ms, 30%),
31 dBm
31 dBm
3:1 VSWR, VD=28 V, IDQ=300 mA, 85 °C
Channel Temperature (TCH)
Soldering Temperature (30 seconds)
Storage Temperature
275 °C
260 °C
−65 to 150 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.
Electrical Specifications
Parameter
Operational Frequency Range
Min
2.9
Typ
Max
3.6
Units
GHz
Output Power (PIN = 25 dBm)
Power Added Efficiency (PIN = 25 dBm)
Small Signal Gain (CW)
2.9 GHz
3.2 GHz
3.5 GHz
50
50
50
dBm
dBm
dBm
2.9 GHz
3.2 GHz
3.5 GHz
53.5
57.5
56.5
%
%
%
2.9 GHz
3.2 GHz
3.5 GHz
30.0
32.0
29.5
dB
dB
dB
Input Return Loss (CW)
2.9 GHz
3.2 GHz
3.5 GHz
19
17
22
dB
dB
dB
Output Return Loss (CW)
2.9 GHz
3.2 GHz
3.5 GHz
7
6
14
dB
dB
dB
POUT Temp. Coeff. (85ꢀ–ꢀ25 °C, PIN = 25 dBm))
0.001
dB/°C
dB/°C
Sm. Sig. Gain Temp. Coefficient (85 to ꢀ−40 °C, CW)
-0.059
Test conditions, unless otherwise noted: T = 25 °C, VD = 28 V, IDQ = 300 mA, VG = −2.5 V Typical, PW = 15 ms, Duty Cycle = 30%
Data Sheet Rev. B, June 2018
2 of 26
www.qorvo.com
QPA3055P
100 W S-Band GaN Power Amplifier
Performance Plots – Large Signal (IDQ=300 mA, PW=15 ms, DC=30%)
Test conditions unless otherwise noted: VD = 28 V, IDQ = 300 mA, T= +25ꢂ°C
Output Power vs. Freq. vs. VD
Power Added Eff. vs. Freq. vs. VD
52
51
50
49
48
47
70
60
50
40
30
20
PIN = 25 dBm
PIN = 25 dBm
28 V
3.0
30 V
3.2
32 V
3.4
28 V
3.0
30 V
3.2
32 V
3.4
2.6
2.8
3.6
3.8
2.6
2.8
3.6
3.8
Frequency (GHz)
Frequency (GHz)
Drain Current vs. Freq. vs. VD
9
PIN = 25 dBm
8
7
6
5
4
3
28 V
3.0
30 V
3.2
32 V
2.6
2.8
3.4
3.6
3.8
Frequency (GHz)
Data Sheet Rev. B, June 2018
3 of 26
www.qorvo.com
QPA3055P
100 W S-Band GaN Power Amplifier
Performance Plots – Large Signal (IDQ=300 mA, PW=15 ms, DC=30%)
Test conditions unless otherwise noted: VD = 28 V, IDQ = 300 mA, T= +25ꢂ°C
Output Power vs. Freq. vs. PIN
Output Power vs. Freq. vs. Temp.
PIN = 25 dBm
52
51
50
49
48
47
52
51
50
49
48
47
-40 C
3.0
+25 C
3.2
+85 C
3.4
25 dBm
2.8
26 dBm
3.2
Frequency (GHz)
27 dBm
3.4
28 dBm
3.6
2.6
2.8
3.6
3.8
3.8
3.8
2.6
3.0
3.8
3.8
3.8
Frequency (GHz)
Power Added Eff. vs. Freq. vs. Temp.
Power Added Eff. vs. Freq. vs. PIN
70
60
50
40
30
20
70
60
50
40
30
20
PIN = 25 dBm
25 dBm 26 dBm
2.8 3.0 3.2
27 dBm
3.4
28 dBm
3.6
-40 C
3.0
+25 C
3.2
+85 C
3.4
2.6
2.8
3.6
2.6
Frequency (GHz)
Frequency (GHz)
Drain Current vs. Freq. vs. Temp.
Drain Current vs. Freq. vs. PIN
9
8
7
6
5
4
3
9
8
7
6
5
4
3
PIN = 25 dBm
25 dBm 26 dBm
2.8 3.0 3.2
27 dBm
3.4
Frequency (GHz)
28 dBm
3.6
-40 C
3.0
+25 C
3.2
+85 C
3.4
2.6
2.8
3.6
2.6
Frequency (GHz)
Data Sheet Rev. B, June 2018
4 of 26
www.qorvo.com
QPA3055P
100 W S-Band GaN Power Amplifier
Performance Plots – Large Signal (IDQ=300 mA, PW=15 ms, DC=30%)
Test conditions unless otherwise noted: VD = 28 V, IDQ = 300 mA, T= +25ꢂ°C
Output Power vs. PIN vs. Freq.
Power Added Eff. vs. PIN vs. Freq.
55
50
45
40
35
30
25
70
60
50
40
30
20
10
0
3.0 GHz
3.2 GHz
3.4 GHz
3.0 GHz
3.2 GHz
3.4 GHz
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Drain Current vs. PIN vs. Freq.
Gate Current vs. PIN vs. Freq.
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
80
70
60
50
40
30
20
10
0
3.0 GHz
3.2 GHz
3.4 GHz
3.0 GHz
3.2 GHz
3.4 GHz
-2
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Data Sheet Rev. B, June 2018
5 of 26
www.qorvo.com
QPA3055P
100 W S-Band GaN Power Amplifier
Performance Plots – Large Signal, Harmonics (IDQ=300 mA, PW=15 ms, DC=30%)
Test conditions unless otherwise noted: VD = 28 V, IDQ = 300 mA, T= +25ꢂ°C
Output Power vs. Input Power vs. Temp.
Freq. = 3.2 GHz
PAE vs. Input Power vs. Temp.
55
50
45
40
35
30
25
70
60
50
40
30
20
10
0
Freq. = 3.2 GHz
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Drain Current vs. Input Power vs. Temp.
Freq. = 3.2 GHz
Gate Current vs. Input Power vs. Temp.
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
80
70
60
50
40
30
20
10
0
Freq. = 3.2 GHz
-40 C +25 C
+85 C
-40 C
+25 C
+85 C
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
2nd Harmonic vs. PIN vs. Temp.
3rd Harmonic vs. PIN vs. Temp.
0
-5
0
-5
VD = 30 V, Freq. = 3.2 GHz
VD = 30 V, Freq. = 3.2 GHz
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-40C
+25C +85C
-40C
+25C
+85C
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Data Sheet Rev. B, June 2018
6 of 26
www.qorvo.com
QPA3055P
100 W S-Band GaN Power Amplifier
Performance Plots – Large Signal (IDQ=1.5 A, PW=15 ms, DC=30%)
Test conditions unless otherwise noted: VD = 28 V, IDQ = 1.5 A, T= +25ꢂ°C
Output Power vs. Freq. vs. VD
Power Added Eff. vs. Freq. vs. VD
52
51
50
49
48
47
70
60
50
40
30
20
PIN = 22 dBm
PIN = 22 dBm
28 V
3.0
30 V
3.2
32 V
3.4
28 V
3.0
30 V
3.2
32 V
3.4
2.6
2.8
3.6
3.8
2.6
2.8
3.6
3.8
Frequency (GHz)
Frequency (GHz)
Drain Current vs. Freq. vs. VD
9
PIN = 22 dBm
8
7
6
5
4
3
28 V
3.0
30 V
3.2
32 V
2.6
2.8
3.4
3.6
3.8
Frequency (GHz)
Data Sheet Rev. B, June 2018
7 of 26
www.qorvo.com
QPA3055P
100 W S-Band GaN Power Amplifier
Performance Plots – Large Signal (IDQ=1.5 A, PW=15 ms, DC=30%)
Test conditions unless otherwise noted: VD = 28 V, IDQ = 1.5 A, T= +25ꢂ°C
Output Power vs. Freq. vs. PIN
Output Power vs. Freq. vs. Temp.
PIN = 22 dBm
52
51
50
49
48
47
52
51
50
49
48
47
-40 C
3.0
+25 C
3.2
+85 C
3.4
22 dBm
2.8
25 dBm
3.0
26 dBm
3.2
Frequency (GHz)
27 dBm
3.4
28 dBm
3.6 3.8
2.6
2.8
3.6
3.8
3.8
3.8
2.6
Frequency (GHz)
Power Added Eff. vs. Freq. vs. Temp.
Power Added Eff. vs. Freq. vs. PIN
70
60
50
40
30
20
70
60
50
40
30
20
PIN = 22 dBm
-40 C
3.0
+25 C
3.2
+85 C
3.4
22 dBm
2.8
25 dBm
3.0
26 dBm
3.2
Frequency (GHz)
27 dBm
3.4
28 dBm
3.6 3.8
2.6
2.8
3.6
2.6
Frequency (GHz)
Drain Current vs. Freq. vs. Temp.
Drain Current vs. Freq. vs. PIN
9
8
7
6
5
4
3
9
8
7
6
5
4
3
PIN = 22 dBm
-40 C
3.0
+25 C
3.2
+85 C
3.4
22 dBm
2.8
25 dBm
3.0
26 dBm
3.2
Frequency (GHz)
27 dBm
3.4
28 dBm
3.6 3.8
2.6
2.8
3.6
2.6
Frequency (GHz)
Data Sheet Rev. B, June 2018
8 of 26
www.qorvo.com
QPA3055P
100 W S-Band GaN Power Amplifier
Performance Plots – Large Signal (IDQ=1.5 A, PW=15 ms, DC=30%)
Test conditions unless otherwise noted: VD = 28 V, IDQ = 1.5 A, T= +25ꢂ°C
Output Power vs. PIN vs. Freq.
Power Added Eff. vs. PIN vs. Freq.
55
50
45
40
35
30
25
70
60
50
40
30
20
10
0
3.0 GHz
3.2 GHz
3.4 GHz
3.0 GHz
3.2 GHz
3.4 GHz
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Drain Current vs. PIN vs. Freq.
Gate Current vs. PIN vs. Freq.
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
80
70
60
50
40
30
20
10
0
3.0 GHz
3.2 GHz
3.4 GHz
3.0 GHz
3.2 GHz
3.4 GHz
-2
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Data Sheet Rev. B, June 2018
9 of 26
www.qorvo.com
QPA3055P
100 W S-Band GaN Power Amplifier
Performance Plots – Large Signal, Harmonics (IDQ=1.5 A, PW=15 ms, DC=30%)
Test conditions unless otherwise noted: VD = 28 V, IDQ = 1.5 A, T= +25ꢂ°C
Output Power vs. Input Power vs. Temp.
Freq. = 3.2 GHz
PAE vs. Input Power vs. Temp.
55
50
45
40
35
30
25
70
60
50
40
30
20
10
0
Freq. = 3.2 GHz
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Drain Current vs. Input Power vs. Temp.
Freq. = 3.2 GHz
Gate Current vs. Input Power vs. Temp.
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
80
70
60
50
40
30
20
10
0
Freq. = 3.2 GHz
-40 C +25 C
+85 C
-40 C
+25 C
+85 C
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
2nd Harmonic vs. PIN vs. Temp.
3rd Harmonic vs. PIN vs. Temp.
0
-5
0
-5
VD = 30 V, Freq. = 3.2 GHz
VD = 30 V, Freq. = 3.2 GHz
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-40C
+25C +85C
-40C
+25C
+85C
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Data Sheet Rev. B, June 2018
10 of 26
www.qorvo.com
QPA3055P
100 W S-Band GaN Power Amplifier
Performance Plots – Large Signal (IDQ=300 mA, PW=100 us, DC=10%)
Test conditions unless otherwise noted: VD = 28 V, IDQ = 300 mA, T= +25ꢂ°C
Output Power vs. Freq. vs. VD
Power Added Eff. vs. Freq. vs. VD
52
51
50
49
48
47
70
60
50
40
30
20
PIN = 25 dBm
PIN = 25 dBm
28 V
3.0
30 V
3.2
32 V
3.4
28 V
3.0
30 V
3.2
32 V
3.4
2.6
2.8
3.6
3.8
2.6
2.8
3.6
3.8
Frequency (GHz)
Frequency (GHz)
Drain Current vs. Freq. vs. VD
9
PIN = 25 dBm
8
7
6
5
4
3
28 V
3.0
30 V
3.2
32 V
2.6
2.8
3.4
3.6
3.8
Frequency (GHz)
Data Sheet Rev. B, June 2018
11 of 26
www.qorvo.com
QPA3055P
100 W S-Band GaN Power Amplifier
Performance Plots – Large Signal (IDQ=300 mA, PW=100 us, DC=10%)
Test conditions unless otherwise noted: VD = 28 V, IDQ = 300 mA, T= +25ꢂ°C
Output Power vs. Freq. vs. PIN
Output Power vs. Freq. vs. Temp.
PIN = 25 dBm
52
51
50
49
48
47
52
51
50
49
48
47
-40 C
3.0
+25 C
3.2
+85 C
3.4
25 dBm
2.8
26 dBm
3.2
Frequency (GHz)
27 dBm
3.4
28 dBm
3.6
2.6
2.8
3.6
3.8
3.8
3.8
2.6
3.0
3.8
3.8
3.8
Frequency (GHz)
Power Added Eff. vs. Freq. vs. Temp.
Power Added Eff. vs. Freq. vs. PIN
70
60
50
40
30
20
70
60
50
40
30
20
PIN = 25 dBm
-40 C
3.0
+25 C
3.2
+85 C
3.4
25 dBm 26 dBm
2.8 3.0 3.2
27 dBm
3.4
28 dBm
3.6
2.6
2.8
3.6
2.6
Frequency (GHz)
Frequency (GHz)
Drain Current vs. Freq. vs. Temp.
Drain Current vs. Freq. vs. PIN
9
8
7
6
5
4
3
9
8
7
6
5
4
3
PIN = 25 dBm
25 dBm 26 dBm
2.8 3.0 3.2
27 dBm
3.4
Frequency (GHz)
28 dBm
3.6
-40 C
3.0
+25 C
3.2
+85 C
3.4
2.6
2.8
3.6
2.6
Frequency (GHz)
Data Sheet Rev. B, June 2018
12 of 26
www.qorvo.com
QPA3055P
100 W S-Band GaN Power Amplifier
Performance Plots – Large Signal (IDQ=300 mA, PW=100 us, DC=10%)
Test conditions unless otherwise noted: VD = 28 V, IDQ = 300 mA, T= +25ꢂ°C
Output Power vs. PIN vs. Freq.
Power Added Eff. vs. PIN vs. Freq.
55
50
45
40
35
30
25
70
60
50
40
30
20
10
0
3.0 GHz
3.2 GHz
3.4 GHz
3.0 GHz
3.2 GHz
3.4 GHz
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Drain Current vs. PIN vs. Freq.
Gate Current vs. PIN vs. Freq.
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
40
35
30
25
20
15
10
5
3.0 GHz
3.2 GHz
3.4 GHz
3.0 GHz
3.2 GHz
3.4 GHz
0
-2
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Data Sheet Rev. B, June 2018
13 of 26
www.qorvo.com
QPA3055P
100 W S-Band GaN Power Amplifier
Performance Plots – Large Signal (IDQ=300 mA, PW=100 us, DC=10%)
Test conditions unless otherwise noted: VD = 28 V, IDQ = 300 mA, T= +25ꢂ°C
Output Power vs. Input Power vs. Temp.
Freq. = 3.2 GHz
PAE vs. Input Power vs. Temp.
55
50
45
40
35
30
25
70
60
50
40
30
20
10
0
Freq. = 3.2 GHz
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Drain Current vs. Input Power vs. Temp.
Freq. = 3.2 GHz
Gate Current vs. Input Power vs. Temp.
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
40
35
30
25
20
15
10
5
Freq. = 3.2 GHz
-40 C +25 C
+85 C
-40 C
+25 C
+85 C
0
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Data Sheet Rev. B, June 2018
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QPA3055P
100 W S-Band GaN Power Amplifier
Performance Plots – Large Signal (IDQ=1.5 A, PW=100 us, DC=10%)
Test conditions unless otherwise noted: VD = 28 V, IDQ = 1.5 A, T= +25ꢂ°C
Output Power vs. Freq. vs. VD
Power Added Eff. vs. Freq. vs. VD
52
51
50
49
48
47
70
60
50
40
30
20
PIN = 22 dBm
PIN = 22 dBm
28 V
3.0
30 V
3.2
32 V
3.4
28 V
3.0
30 V
3.2
32 V
3.4
2.6
2.8
3.6
3.8
2.6
2.8
3.6
3.8
Frequency (GHz)
Frequency (GHz)
Drain Current vs. Freq. vs. VD
9
PIN = 22 dBm
8
7
6
5
4
3
28 V
3.0
30 V
3.2
32 V
3.4
2.6
2.8
3.6
3.8
Frequency (GHz)
Data Sheet Rev. B, June 2018
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QPA3055P
100 W S-Band GaN Power Amplifier
Performance Plots – Large Signal (IDQ=1.5 A, PW=100 us, DC=10%)
Test conditions unless otherwise noted: VD = 28 V, IDQ = 1.5 A, T= +25ꢂ°C
Output Power vs. Freq. vs. PIN
Output Power vs. Freq. vs. Temp.
PIN = 22 dBm
52
51
50
49
48
47
52
51
50
49
48
47
22 dBm
2.8
25 dBm
3.0
26 dBm
3.2
Frequency (GHz)
27 dBm
3.4
28 dBm
3.6 3.8
-40 C
3.0
+25 C
3.2
+85 C
3.4
2.6
2.8
3.6
3.8
3.8
3.8
2.6
Frequency (GHz)
Power Added Eff. vs. Freq. vs. Temp.
Power Added Eff. vs. Freq. vs. PIN
70
60
50
40
30
20
70
60
50
40
30
20
PIN = 22 dBm
22 dBm
2.8
25 dBm
3.0
26 dBm
3.2
Frequency (GHz)
27 dBm
3.4
28 dBm
3.6 3.8
-40 C
3.0
+25 C
3.2
+85 C
3.4
2.6
2.8
3.6
2.6
Frequency (GHz)
Drain Current vs. Freq. vs. Temp.
Drain Current vs. Freq. vs. PIN
9
8
7
6
5
4
3
9
8
7
6
5
4
3
PIN = 22 dBm
-40 C
3.0
+25 C
3.2
+85 C
3.4
22 dBm
2.8
25 dBm
3.0
26 dBm
3.2
Frequency (GHz)
27 dBm
3.4
28 dBm
3.6 3.8
2.6
2.8
3.6
2.6
Frequency (GHz)
Data Sheet Rev. B, June 2018
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QPA3055P
100 W S-Band GaN Power Amplifier
Performance Plots – Large Signal (IDQ=1.5 A, PW=100 us, DC=10%)
Test conditions unless otherwise noted: VD = 28 V, IDQ = 1.5 A, T= +25ꢂ°C
Output Power vs. PIN vs. Freq.
Power Added Eff. vs. PIN vs. Freq.
55
50
45
40
35
30
25
70
60
50
40
30
20
10
0
3.0 GHz
3.2 GHz
3.4 GHz
3.0 GHz
3.2 GHz
3.4 GHz
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Drain Current vs. PIN vs. Freq.
Gate Current vs. PIN vs. Freq.
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
40
35
30
25
20
15
10
5
3.0 GHz
3.2 GHz
3.4 GHz
3.0 GHz
3.2 GHz
3.4 GHz
0
-2
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Data Sheet Rev. B, June 2018
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QPA3055P
100 W S-Band GaN Power Amplifier
Performance Plots – Large Signal (IDQ=1.5 A, PW=100 us, DC=10%)
Test conditions unless otherwise noted: VD = 28 V, IDQ = 1.5 A, T= +25ꢂ°C
Output Power vs. Input Power vs. Temp.
Freq. = 3.2 GHz
PAE vs. Input Power vs. Temp.
55
50
45
40
35
30
25
70
60
50
40
30
20
10
0
Freq. = 3.2 GHz
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Drain Current vs. Input Power vs. Temp.
Freq. = 3.2 GHz
Gate Current vs. Input Power vs. Temp.
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
40
35
30
25
20
15
10
5
Freq. = 3.2 GHz
-40 C +25 C
+85 C
-40 C
+25 C
+85 C
0
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
-2
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
Data Sheet Rev. B, June 2018
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QPA3055P
100 W S-Band GaN Power Amplifier
Performance Plots – Small Signal (CW)
Test conditions unless otherwise noted: VD = 28 V, IDQ = 300 mA, CW input power, T=+25ꢂ°C
Gain vs. Freq. vs. Temp.
Gain vs. Frequency vs. VD
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
-40 C
+25 C
+85 C
28 V
2.8
30 V
3.2
32 V
3.4
0
0
2.2
2.4
2.4
2.4
2.6
3.0
3.6
3.8
3.8
3.8
4.0
4.0
4.0
2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2
Frequency (GHz)
Frequency (GHz)
Input RL vs. Freq. vs. Temp.
Input RL vs. Frequency vs. VD
0
0
-5
-10
-15
-20
-25
-30
-5
-10
-15
-20
-25
-30
28 V
2.8
30 V
3.2
32 V
3.4 3.6
-40 C
+25 C
+85 C
2.2
2.6
3.0
2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2
Frequency (GHz)
Frequency (GHz)
Output RL vs. Freq. vs. Temp.
Output RL vs. Frequency vs. VD
0
-5
0
-5
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
28 V
2.8
30 V
3.2
32 V
3.4 3.6
-40 C
2.8
+25 C
3.2
+85 C
3.4
2.2
2.4
2.6
3.0
3.6
3.8
4.0
2.2
2.6
3.0
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. B, June 2018
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QPA3055P
100 W S-Band GaN Power Amplifier
Performance Plots – Small Signal (CW)
Test conditions unless otherwise noted: VD = 28 V, IDQ = 1.5 A, CW input power, T=+25ꢂ°C
Gain vs. Freq. vs. Temp.
Gain vs. Frequency vs. VD
50
45
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
-40 C
+25 C
+85 C
28 V
2.8
30 V
3.2
32 V
3.4
2.2
2.4
2.4
2.4
2.6
3.0
3.6
3.8
3.8
3.8
4.0
4.0
4.0
2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2
Frequency (GHz)
Frequency (GHz)
Input RL vs. Freq. vs. Temp.
Input RL vs. Frequency vs. VD
0
0
-5
-10
-15
-20
-25
-30
-5
-10
-15
-20
-25
-30
28 V
2.8
30 V
3.2
32 V
3.4 3.6
-40 C
+25 C
+85 C
2.2
2.6
3.0
2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2
Frequency (GHz)
Frequency (GHz)
Output RL vs. Freq. vs. Temp.
Output RL vs. Frequency vs. VD
0
-5
0
-5
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
28 V
2.8
30 V
3.2
32 V
3.4 3.6
-40 C
2.8
+25 C
3.2
+85 C
3.4
2.2
2.4
2.6
3.0
3.6
3.8
4.0
2.2
2.6
3.0
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. B, June 2018
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QPA3055P
100 W S-Band GaN Power Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Value
0.36
Units
ºC/W
°C
Thermal Resistance (θJC) (1)
Channel Temperature, TCH (Under RF) (2)
Median Lifetime (TM)
Thermal Resistance (θJC) (1)
Channel Temperature, TCH (Under RF) (2)
Median Lifetime (TM)
Thermal Resistance (θJC) (1)
Channel Temperature, TCH (Under RF) (2)
Median Lifetime (TM)
Thermal Resistance (θJC) (1)
Channel Temperature, TCH (Under RF) (2)
Median Lifetime (TM)
Tbase = 85 °C, VD = 30 V, IDQ = 300 mA, Freq = 2.9 GHz,
ID_Drive = 6.9 A, PIN = 25 dBm, POUT = 50.2 dBm,
122
PDISS = 101.0 W, PW = 100 us, DC = 10%
6.39E+09
0.74
Hrs
ºC/W
°C
Tbase = 85 °C, VD = 30 V, IDQ =1.5 A, Freq = 2.9 GHz,
ID_Drive = 6.3 A, PIN = 25 dBm, POUT = 50.0 dBm,
151
PDISS = 90.1 W, PW = 15ms, DC = 30%
2.66E+09
0.36
Hrs
ºC/W
°C
Tbase = 85 °C, VD = 32 V, IDQ = 300 mA, Freq = 2.9 GHz,
ID_Drive = 7.2 A, PIN = 25 dBm, POUT = 50.6 dBm,
127
PDISS = 115.6 W, PW = 100 us, DC = 10%
4.72E+07
0.83
Hrs
ºC/W
°C
Tbase = 85 °C, VD = 32 V, IDQ = 1.5 A, Freq = 2.9 GHz,
ID_Drive = 6.5 A, PIN = 25 dBm, POUT = 50.4 dBm,
168
PDISS = 100.1 W, PW = 15 ms, DC = 30%
4.55E+06
Hrs
Notes:
1. Thermal resistance determined to the back of package (85 °C)
2. Channel temperature indicated is an IR scan equivalent temperature. Thermal resistance is calculated using this value.
Additional information can be found in the Qorvo Applications Note “GaN Device TCHMAX Theta-JC and Reliability
Estimates,” located here https://www.qorvo.com/products/d/da006480
Dissipated Power
Dissipated Power vs. Freq. vs. VD, IDQ, PW
140
PIN = 25 dBm, Temp. = 85 °C
130
120
110
100
90
80
70
60
28V 300mA 100us/10%
30V 300mA 100us/10%
32V 300mA 100us/10%
28V 1.5A 15ms/30%
30V 1.5A 15ms/30%
32V 1.5A 15ms/30%
50
40
30
2.6
2.8
3.0
3.2
Frequency (GHz)
3.4
3.6
3.8
Data Sheet Rev. B, June 2018
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QPA3055P
100 W S-Band GaN Power Amplifier
Applications Information
C1
10 uF
C3
0.1 uF
C6
0.1 uF
R1
0 Ohms
R2
10 Ohms
R4
10 Ohms
10
1
2
9
Vg
Vd
8 RF OUT
RF IN 3
4
5
7
R6
0 Ohms
6
R5
10 Ohms
R7
10 Ohms
C10
0.1 uF
C9
10 uF
C7
0.1 uF
Notes:
1. VG & VD need to be biased from both sides.
Bias-Down Procedure
Bias-Up Procedure
1. Set ID limit (CW) to 7000 mA, IG limit to 60 mA
2. Set VG to −5.0 V
1. Turn off RF signal
2. Reduce VG to −5.0 V. Ensure IDQ ~ 0mA
4. Set VD to 0 V
3. Set VD +30 V
4. Adjust VG more positive until IDQ ≈ 300 mA, peak (VG ~ −2.5 V,
typical)
5. Turn off VD supply
6. Turn off VG supply
5. Apply RF signal
Data Sheet Rev. B, June 2018
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QPA3055P
100 W S-Band GaN Power Amplifier
Evaluation Board (EVB) Layout Assembly
C1
R1
C3
R2
C6
R4
J1
J2
R5
C7
R6
C9
R7
C10
Bill of Materials
Reference Des.
Value
Description
Manuf.
Part Number
C1, C9
10 uF
CAP, CER, 10 uF, 50 V, 20%, X5R, 1206
Various
C3, C6, C7, C10
R2, R4, R5, R7
R1, R6
0.1 uF
10 Ohm
0 Ohm
CAP, 0.1 uF, 10%, 50 V, X7R, 0402
RESISTOR, 10 OHM, 5%, 0.1 W, 0402
RES, 0 OHM, JMPR, 0402
Various
Various
Various
Southwest
Microwave
J1, J2
PCB
2.92 mm
-----
Female End Launch Connector
1092-02A-5
Rogers 6035HTC, 10 mil dielectric, 0.5 oz.
copper (gold plated)
Rogers Corp.
Data Sheet Rev. B, June 2018
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QPA3055P
100 W S-Band GaN Power Amplifier
Mechanical Information and Bond Pad Description
Bond Pad Description
Pad No.
Symbol
Description
Gate voltage. Bias network is required; see Application Circuit on page 21 as an example.
Gate must be biased from both sides.
1, 5
VG
2, 4, 7, 9
Ground
RF Input
VD
Must be grounded to PCB
3
RF Input; matched to 50ꢀꢁ, DC blocked
6, 10
8
Drain voltage. Bias network is required; see Application Circuit on page 21 as an example.
RF Output; matched to 50ꢀꢁ, DC blocked, DC grounded
RF Output
Data Sheet Rev. B, June 2018
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QPA3055P
100 W S-Band GaN Power Amplifier
Assembly Notes
1. Carefully clean the PC board and package leads with alcohol. Allow it to dry fully.
2. To improve the thermal and RF performance, Qorvo recommends attaching a heat sink to the bottom of the PCB
and apply thermal compound (Arctic Silver 5 recommended) or 4 mil indium shim between the heat sink and the
package.
3. (The following is for information only. There are many variables in a second level assembly that Qorvo does not
control, so Qorvo does not recommend an absolute torque value.) Use screws to attach the component to the heat
sink. A suggested torque value is 16 in-oz. for a 0-80 screw. Start with screws finger tight, then torque to 8 in-oz.,
then torque to final value. Use the following tightening pattern:
4. Apply no-flux solder to each pin of the QPA3055P. The component leads should be manually soldered, and the
package should not be subjected to conventional reflow processes. The use of no-clean solder to avoid washing
after soldering is recommended.
Data Sheet Rev. B, June 2018
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QPA3055P
100 W S-Band GaN Power Amplifier
Handling Precautions
Parameter
Rating Standard
Class 1B ANSI/ESDA/JEDEC JS-001
Caution!
ESD-Sensitive Device
ESDꢀ–ꢀHuman Body Model (HBM)
Solderability
The component leads should be manually soldered, and the package should not be subjected to conventional reflow
processes. Soldering of the component leads is compatible with the latest version of J-STD-020, lead-free solder, 260 °C.
The use of no-clean solder to avoid washing after soldering is recommended.
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2018 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet Rev. B, June 2018
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