QPA2225DEVBA [QORVO]
28 â 38 GHz 0.4 Watt GaN Driver Amplifier;
| 型号： | QPA2225DEVBA |
| 厂家： | 
Qorvo |
| 描述： | 28 â 38 GHz 0.4 Watt GaN Driver Amplifier |
| 文件： | 总23页 (文件大小：1094K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPA2225D
28ꢀ–ꢀ38 GHz 0.4 Watt GaN Driver Amplifier
®
Product Overview
Qorvo’s QPA2225D is a wide band MMIC driver amplifier
fabricated on Qorvo’s production 0.15 um GaN on SiC
process (QGaN15). Covering 28ꢀ–ꢀ38 GHz, the QPA2225D
provides > 0.4 W of saturated output power with >23 dB of
small-signal gain.
The QPA2225D MMIC dimensions are 1.65 x 0.67 x 0.05
mm. It can support a variety of operating conditions to
best support system requirements. With good thermal
properties, it can support a range of bias voltages.
Key Features
The QPA2225D has DC blocking capacitors on both RF
ports, which are matched to 50 ohms.
Frequency Range: 28 ꢀ– 38 GHz
PSAT (PIN = 13 dBm): > 26 dBm
Small Signal Gain: > 23 dB
The QPA2225D is ideal for supporting communications
and radar applications in both commercial and military
markets.
IM3 (POUT/Tone = 20 dBm): -20 dBc
Bias: CW, VD = +20 V, IDQ = 64 mA, VG = -2.5 V typ.
Die Dimensions: 1.65 x 0.67 x 0.05 mm
Lead-free and RoHS compliant.
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Functional Block Diagram
Applications
Communications
Radar
Satellite Communications
Electronic Warfare
Ordering Information
Part No.
Description
28ꢀ–ꢀ38 GHz 0.4 Watt GaN Amplifier
(100 pcs.)
Samples (2 pcs. pack)
QPA2225D
QPA2225DS2
QPA2225DEVBA Evaluation Board for QPA2225D
Data Sheet Rev. B, May 2021 | Subject to change without notice
1 of 23
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QPA2225D
®
28ꢀ–ꢀ38 GHz 0.4 Watt GaN Driver Amplifier
Recommended Operating Conditions
Absolute Maximum Ratings
Parameter
Min Typ. Max Units
Parameter
Valueꢀ/ꢀRange
29.5 V
Drain Voltage (VD)
Gate Voltage Range (VG)
Drain Current (ID)
Drain Voltage (VD)
Drain Current, (IDQ
+20
64
V
-6 V to 0 V
456 mA
)
mA
mA
V
Drain Current, RF (ID_Drive
Gate Voltage Range (VG)
)
See chart page 6
−2 to -2.9
Gate Current (IG)
See plot page 18
5 W
Power Dissipation (PDISS), 85 °C
Gate Current, RF (IG_Drive
TBASE Range
)
See chart page 6
mA
ºC
Input Power (PIN), CW, 50 Ω,
VD = 20 V, IDQ = 64 mA, TBASE = 85 °C
18 dBm
18 dBm
−40
+85
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Input Power (PIN), CW, 3:1 VSWR,
VD = 20 V, IDQ = 64 mA, TBASE = 85 °C
Mounting Temperature (30 seconds)
Storage Temperature
320 ºC
-55 to +150 ºC
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.
Electrical Specifications
Parameter
Conditionsꢀ(1) (2)
Min
Typ.
Max
Units
GHz
dBm
dB
Operational Frequency Range
Output Power at Saturation, PSAT
Large Signal Gain
28
38
PIN = +13 dBm
PIN = +13 dBm
> 26
> 13
> 23
5
Small Signal Gain, S21
Input Return Loss, IRL
Output Return Loss, ORL
dB
dB
5
dB
POUT/Tone = 20 dBm; Freq. = 35 GHz;
3RD Intermodulation Products, IM3
5TH Intermodulation Products, IM5
-20
-30
dBc
dBc
Δf = 100 MHz
POUT/Tone = 20 dBm; Freq. = 35 GHz;
Δf = 100 MHz
PSAT Temperature Coefficient
S21 Temperature Coefficient
Notes:
TDIFF = −40 ºC to +85 ºC; PIN = +13 dBm
TDIFF = −40 ºC to +85 ºC
-0.02
-0.07
dBm/ºC
dB/ºC
1. Test conditions unless otherwise noted: CW, VD = + 20 V, IDQ = 64 mA, VG = -2.5V +/- typical, TBASEꢁ=ꢁ+25 ºC, Z0ꢁ=ꢁ50ꢁΩ
2. TBASE is back side of 20 mil CuMo carrier plate with AuSn solder
Data Sheet Rev. B, May 2021 | Subject to change without notice
2 of 23
www.qorvo.com
QPA2225D
®
28ꢀ–ꢀ38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀSmall Signal
Test conditions, unless otherwise noted: CW, VD = 20 V, IDQ = 64 mA, TBASE = +25 ºC
Gain vs. Frequency vs. Temp.
Gain vs. Frequency vs. VD
36
32
28
24
20
16
12
8
36
32
28
24
20
16
12
8
12 V
18 V
24 V
14 V
20 V
26 V
16 V
22 V
28 V
4
4
-40 C
30
+25 C
34
+85 C
36
0
0
24
26
28
32
38
40
42
42
42
24
26
28
30
32
34
36
38
40
40
40
42
42
42
Frequency (GHz)
Frequency (GHz)
Input RL vs. Frequency vs. Temp.
Input RL vs. Frequency vs. VD
0
0
-5
-10
-15
-20
-25
-30
-5
-10
-15
-20
-25
-30
12 V
18 V
24 V
14 V
20 V
26 V
16 V
22 V
28 V
-40 C
30
+25 C
32 34
+85 C
36
24
26
28
38
40
24
26
28
30
32
34
36
38
Frequency (GHz)
Frequency (GHz)
Output RL vs. Frequency vs. Temp.
Output RL vs. Frequency vs. VD
0
-5
0
-5
-40 C
+25 C
+85 C
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
12 V
16 V
20 V
24 V
28 V
14 V
18 V
22 V
26 V
24
26
28
30
32
34
36
38
40
24
26
28
30
32
34
36
38
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. B, May 2021 | Subject to change without notice
3 of 23
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QPA2225D
®
28ꢀ–ꢀ38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀSmall Signal
Test conditions, unless otherwise noted: CW, VD = 20 V, IDQ = 64 mA, TBASE = +25 ºC
Gain vs. Frequency vs. IDQ
36
32
28
24
20
16
12
8
4
44 mA
30
64 mA
34
84 mA
36 38
0
24
26
28
32
40
42
Frequency (GHz)
Input RL vs. Frequency vs. IDQ
Output RL vs. Frequency vs. IDQ
0
-5
0
-5
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
44 mA
30
64 mA
32 34
84 mA
36
44 mA
30
64 mA
34
84 mA
36 38
24
26
28
32
40
42
24
26
28
38
40
42
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. B, May 2021 | Subject to change without notice
4 of 23
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QPA2225D
®
28ꢀ–ꢀ38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀLarge Signal (CW)
Test conditions, unless otherwise noted: CW, VD = 20 V, IDQ = 64 mA, PIN = +13dBm, TBASE = +25 ºC
PAE vs. Freq. vs. Temp.
Output Power vs. Freq. vs. Temp.
30
29
28
27
26
25
24
23
22
21
20
22
20
18
16
14
12
10
8
6
4
2
-40 C
30
+25 C
34
+85 C
36 38
-40 C
30
+25 C
34
+85 C
36 38
0
24
26
28
32
40
42
24
24
24
26
26
26
28
32
40
42
42
42
Frequency (GHz)
Frequency (GHz)
PAE vs. Freq. vs. VD
22
20
18
16
14
12
10
8
Output Power vs. Freq. vs. VD
30
29
28
27
26
25
24
23
22
21
20
6
4
12 V
22 V
14 V
24 V
16 V
26 V
18 V
28 V
20 V
40
12 V
22 V
14 V
24 V
16 V
26 V
18 V
28 V
20 V
2
0
28
30
32
34
36
38
24
26
28
30
32
34
36
38
40
42
Frequency (GHz)
Frequency (GHz)
PAE vs. Freq. vs. IDQ
Output Power vs. Freq. vs. IDQ
30
29
28
27
26
25
24
23
22
21
20
22
20
18
16
14
12
10
8
6
4
2
44 mA
30
64 mA
34
84 mA
36 38
64 mA
30
64 mA
34
84 mA
36 38
0
24
26
28
32
40
42
28
32
40
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. B, May 2021 | Subject to change without notice
5 of 23
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QPA2225D
®
28ꢀ–ꢀ38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀLarge Signal (CW)
Test conditions, unless otherwise noted: CW, VD = 20 V, IDQ = 64 mA, PIN = +13dBm, TBASE = +25 ºC
Drain Current vs. Freq. vs. Temp.
Gate Current vs. Freq. vs. Temp.
300
250
200
150
100
50
2.0
1.5
1.0
0.5
0.0
-0.5
-1.0
-1.5
-2.0
-40 C
30
+25 C
34
+85 C
36 38
-40 C
30
+25 C
32 34
+85 C
36 38
0
24
26
28
32
40
42
24
24
24
26
28
40
40
40
42
42
42
Frequency (GHz)
Frequency (GHz)
Gate Current vs. Freq. vs. VD
2.0
1.5
Drain Current vs. Freq. vs. VD
300
250
200
150
100
50
1.0
0.5
0.0
-0.5
-1.0
-1.5
-2.0
12 V
22 V
14 V
24 V
16 V
26 V
18 V
28 V
20 V
38
12 V
22 V
14 V
24 V
16 V
26 V
18 V
28 V
20 V
38
0
26
28
30
32
34
36
24
26
28
30
32
34
36
40
42
Frequency (GHz)
Frequency (GHz)
Drain Current vs. Freq. vs. IDQ
Gate Current vs. Freq. vs. IDQ
300
250
200
150
100
50
2.0
1.5
1.0
0.5
0.0
-0.5
-1.0
-1.5
-2.0
44 mA
30
64 mA
34
84 mA
36 38
44 mA
30
64 mA
32 34
84 mA
36 38
0
24
26
28
32
40
42
26
28
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. B, May 2021 | Subject to change without notice
6 of 23
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QPA2225D
®
28ꢀ–ꢀ38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀLarge Signal (CW)
Test conditions, unless otherwise noted: CW, VD = 20 V, IDQ = 64 mA, PIN = +13dBm, TBASE = +25 ºC
Output Power vs. Input Power vs. Freq.
PAE vs. Input Power vs. Freq.
30
28
26
24
22
20
18
16
14
12
10
22
20
18
16
14
12
10
8
28 GHz
32 GHz
36 GHz
30 GHz
34 GHz
38 GHz
28 GHz
32 GHz
36 GHz
30 GHz
34 GHz
38 GHz
6
4
2
0
-8
-8
-8
-6
-4
-2
0
2
4
6
8
10 12 14
-8
-8
-8
-6
-4
-2
0
2
4
6
8
10 12 14
Input Power (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. Temp.
35 GHz
PAE vs. Input Power vs. Temp.
30
28
26
24
22
20
18
16
14
12
10
20
18
16
14
12
10
8
35 GHz
6
4
2
-40 C
4
+25 C
8
+85 C
-40 C
4
+25 C
8
+85 C
0
-6
-4
-2
0
2
6
10 12 14
-6
-4
-2
0
2
6
10 12 14
Input Power (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. VD
35 GHz
PAE vs. Input Power vs. VD
30
28
26
24
22
20
18
16
14
12
10
20
18
16
14
12
10
8
35 GHz
12 V
18 V
24 V
14 V
20 V
26 V
16 V
22 V
28 V
6
4
12 V
22 V
14 V
24 V
16 V
26 V
18 V
28 V
20 V
2
0
-6
-4
-2
0
2
4
6
8
10 12 14
-6
-4
-2
0
2
4
6
8
10 12 14
Input Power (dBm)
Input Power (dBm)
Data Sheet Rev. B, May 2021 | Subject to change without notice
7 of 23
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QPA2225D
®
28ꢀ–ꢀ38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀLarge Signal (CW)
Test conditions, unless otherwise noted: CW, VD = 20 V, IDQ = 64 mA, PIN = +13dBm, TBASE = +25 ºC
Drain Current vs. Input Power vs. Freq.
Gate Current vs. Input Power vs. Freq.
300
250
200
150
100
50
2.0
1.5
1.0
0.5
0.0
-0.5
-1.0
-1.5
-2.0
28 GHz
32 GHz
36 GHz
30 GHz
34 GHz
38 GHz
28 GHz
32 GHz
36 GHz
30 GHz
34 GHz
38 GHz
0
-8
-8
-8
-6
-4
-2
0
2
4
6
8
10 12 14
-8
-8
-8
-6
-4
-2
0
2
4
6
8
10 12 14
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. Temp.
35 GHz
Gate Current vs. Input Power vs. Temp.
35 GHz
300
250
200
150
100
50
2.0
1.5
1.0
0.5
0.0
-0.5
-1.0
-1.5
-2.0
-40 C
4
+25 C
8
+85 C
-40 C
4
+25 C
8
+85 C
0
-6
-4
-2
0
2
6
10 12 14
-6
-4
-2
0
2
6
10 12 14
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. VD
35 GHz
Gate Current vs. Input Power vs. VD
35 GHz
300
250
200
150
100
50
2.0
1.5
1.0
0.5
0.0
-0.5
-1.0
-1.5
-2.0
12 V
14 V
24 V
16 V
26 V
18 V
28 V
20 V
12 V
14 V
24 V
16 V
26 V
18 V
28 V
20 V
22 V
22 V
0
-6
-4
-2
0
2
4
6
8
10 12 14
-6
-4
-2
0
2
4
6
8
10 12 14
Input Power (dBm)
Input Power (dBm)
Data Sheet Rev. B, May 2021 | Subject to change without notice
8 of 23
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QPA2225D
®
28ꢀ–ꢀ38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀLarge Signal (CW)
Test conditions, unless otherwise noted: CW, VD = 20 V, IDQ = 64 mA, PIN = +13dBm, TBASE = +25 ºC
Power Gain vs. Input Power vs. Freq.
Power Gain vs. Freq. vs. Temp.
20
18
16
14
12
10
8
30
28
26
24
22
20
18
16
14
12
10
6
28 GHz
32 GHz
36 GHz
30 GHz
34 GHz
38 GHz
4
2
-40 C
30
+25 C
34
+85 C
36 38
0
24
24
24
26
26
26
28
32
40
42
42
42
-8
-8
-8
-6
-4
-2
0
2
4
6
8
10 12 14
Frequency (GHz)
Input Power (dBm)
Power Gain vs. Input Power vs. VD
Power Gain vs. Freq. vs. VD
30
28
26
24
22
20
18
16
14
12
10
20
18
16
14
12
10
8
35 GHz
6
4
12 V
22 V
14 V
24 V
16 V
26 V
18 V
28 V
20 V
12 V
22 V
14 V
24 V
16 V
26 V
18 V
28 V
20 V
2
0
-6
-4
-2
0
2
4
6
8
10 12 14
28
30
32
34
36
38
40
Input Power (dBm)
Frequency (GHz)
Power Gain vs. Input Power vs. Temp.
Power Gain vs. Freq. vs. IDQ
20
18
16
14
12
10
8
30
28
26
24
22
20
18
16
14
12
10
35 GHz
6
4
2
44 mA
30
64 mA
34
84 mA
36 38
-40 C
4
+25 C
8
+85 C
0
28
32
40
-6
-4
-2
0
2
6
10 12 14
Frequency (GHz)
Input Power (dBm)
Data Sheet Rev. B, May 2021 | Subject to change without notice
9 of 23
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QPA2225D
®
28ꢀ–ꢀ38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀLarge Signal (Pulsed)
Test conditions, unless otherwise noted: Pulsed VD = 20 V, IDQ = 64 mA, PW = 100 µs, DC = 10%, PIN = +13dBm, TBASE = +25 ºC
PAE vs. Freq. vs. Temp.
Output Power vs. Freq. vs. Temp.
22
30
20
29
18
28
16
27
14
26
12
25
10
24
8
23
6
4
22
21
20
-40 C
30
+25 C
34
+85 C
36 38
2
0
-40 C
30
+25 C
34
+85 C
36 38
24
26
28
32
40
42
24
26
28
32
40
42
Frequency (GHz)
Frequency (GHz)
PAE vs. Freq. vs. VD
Output Power vs. Freq. vs. VD
30
29
28
27
26
25
24
23
22
21
20
22
20
18
16
14
12
10
8
6
4
2
12 V
30
20 V
34
28 V
36
12 V
30
20 V
34
28 V
36
0
24
26
28
32
38
40
42
24
26
28
32
38
40
42
Frequency (GHz)
Frequency (GHz)
PAE vs. Freq. vs. IDQ
Output Power vs. Freq. vs. IDQ
30
29
28
27
26
25
24
23
22
21
20
22
20
18
16
14
12
10
8
6
4
2
44 mA
30
64 mA
34
84 mA
36 38
64 mA
30
64 mA
34
84 mA
36 38
0
24
26
28
32
40
42
24
26
28
32
40
42
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. B, May 2021 | Subject to change without notice
10 of 23
www.qorvo.com
QPA2225D
®
28ꢀ–ꢀ38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀLarge Signal (Pulsed)
Test conditions, unless otherwise noted: Pulsed VD = 20 V, IDQ = 64 mA, PW = 100 µs, DC = 10%, PIN = +13dBm, TBASE = +25 ºC
Drain Current vs. Freq. vs. Temp.
Gate Current vs. Freq. vs. Temp.
300
250
200
150
100
50
2.0
1.5
1.0
0.5
0.0
-0.5
-1.0
-1.5
-2.0
-40 C
30
+25 C
34
+85 C
36 38
-40 C
30
+25 C
32 34
+85 C
36 38
0
24
24
24
26
26
26
28
32
40
40
40
42
42
42
24
24
24
26
28
40
40
40
42
42
42
Frequency (GHz)
Frequency (GHz)
Drain Current vs. Freq. vs. VD
Gate Current vs. Freq. vs. VD
300
250
200
150
100
50
2.0
1.5
1.0
0.5
0.0
-0.5
-1.0
-1.5
-2.0
12 V
30
20 V
34
28 V
36
12 V
30
20 V
34
28 V
38
0
28
32
38
26
28
32
36
Frequency (GHz)
Frequency (GHz)
Gate Current vs. Freq. vs. IDQ
Drain Current vs. Freq. vs. VD
300
250
200
150
100
50
2.0
1.5
1.0
0.5
0.0
-0.5
-1.0
-1.5
-2.0
12 V
30
20 V
34
28 V
36
44 mA
30
64 mA
32 34
84 mA
36 38
0
28
32
38
26
28
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. B, May 2021 | Subject to change without notice
11 of 23
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QPA2225D
®
28ꢀ–ꢀ38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀLarge Signal (Pulsed)
Test conditions, unless otherwise noted: Pulsed VD = 20 V, IDQ = 64 mA, PW = 100 µs, DC = 10%, PIN = +13dBm, TBASE = +25 ºC
Output Power vs. Input Power vs. Freq.
PAE vs. Input Power vs. Freq.
30
28
26
24
22
20
18
16
14
12
10
22
20
18
16
14
12
10
8
28 GHz
32 GHz
36 GHz
30 GHz
34 GHz
38 GHz
28 GHz
32 GHz
36 GHz
30 GHz
34 GHz
38 GHz
6
4
2
0
-8
-8
-8
-6
-4
-2
0
2
4
6
8
10 12 14
-8
-8
-8
-6
-4
-2
0
2
4
6
8
10 12 14
Input Power (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. Temp.
35 GHz
PAE vs. Input Power vs. Temp.
30
28
26
24
22
20
18
16
14
12
10
22
20
18
16
14
12
10
8
35 GHz
6
4
2
-40 C
4
+25 C
8
+85 C
-40 C
4
+25 C
8
+85 C
0
-6
-4
-2
0
2
6
10 12 14
-6
-4
-2
0
2
6
10 12 14
Input Power (dBm)
Input Power (dBm)
Power Gain vs. Input Power vs. VD
PAE vs. Input Power vs. VD
30
28
26
24
22
20
18
16
14
12
10
22
20
18
16
14
12
10
8
35 GHz
35 GHz
6
4
2
12 V
0
20 V
4
28 V
8
12 V
0
20 V
4
28 V
8
0
-6
-4
-2
2
6
10 12 14
-6
-4
-2
2
6
10 12 14
Input Power (dBm)
Input Power (dBm)
Data Sheet Rev. B, May 2021 | Subject to change without notice
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QPA2225D
®
28ꢀ–ꢀ38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀLarge Signal (Pulsed)
Test conditions, unless otherwise noted: Pulsed VD = 20 V, IDQ = 64 mA, PW = 100 µs, DC = 10%, PIN = +13dBm, TBASE = +25 ºC
Drain Current vs. Input Power vs. Freq.
Gate Current vs. Input Power vs. Freq.
300
250
200
150
100
50
2.0
1.5
1.0
0.5
0.0
-0.5
-1.0
-1.5
-2.0
28 GHz
32 GHz
36 GHz
30 GHz
34 GHz
38 GHz
28 GHz
32 GHz
36 GHz
30 GHz
34 GHz
38 GHz
0
-8
-8
-8
-6
-4
-2
0
2
4
6
8
10 12 14
-8
-6
-4
-2
0
2
4
6
8
10 12 14
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. Temp.
35 GHz
Gate Current vs. Freq. vs. Temp.
300
250
200
150
100
50
2.0
1.5
1.0
0.5
0.0
-0.5
-1.0
-1.5
-2.0
-40 C
4
+25 C
8
+85 C
-40 C
30
+25 C
32 34
+85 C
36 38
0
-6
-4
-2
0
2
6
10 12 14
24
26
28
40
42
Input Power (dBm)
Frequency (GHz)
Drain Current vs. Input Power vs. VD
35 GHz
Gate Current vs. Input Power vs. VD
35 GHz
300
250
200
150
100
50
2.0
1.5
1.0
0.5
0.0
-0.5
-1.0
-1.5
-2.0
12 V
0
20 V
4
28 V
8
12 V
0
20 V
4
28 V
8
0
-6
-4
-2
2
6
10 12 14
-8
-6
-4
-2
2
6
10 12 14
Input Power (dBm)
Input Power (dBm)
Data Sheet Rev. B, May 2021 | Subject to change without notice
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QPA2225D
®
28ꢀ–ꢀ38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀLarge Signal (Pulsed)
Test conditions, unless otherwise noted: Pulsed VD = 20 V, IDQ = 64 mA, PW = 100 µs, DC = 10%, PIN = +13dBm, TBASE = +25 ºC
Power Gain vs. Input Power vs. Freq.
Power Gain vs. Freq. vs. Temp.
20
18
16
14
12
10
8
30
28
26
24
22
20
18
16
14
12
10
6
28 GHz
32 GHz
36 GHz
30 GHz
34 GHz
38 GHz
4
2
-40 C
30
+25 C
34
+85 C
36 38
0
24
24
24
26
26
26
28
32
40
40
40
42
42
42
-8
-8
-8
-6
-4
-2
0
2
4
6
8
10 12 14
Frequency (GHz)
Input Power (dBm)
Power Gain vs. Input Power vs. VD
Power Gain vs. Freq. vs. VD
20
18
16
14
12
10
8
30
28
26
24
22
20
18
16
14
12
10
35 GHz
6
4
2
12 V
0
20 V
4
28 V
8
12 V
30
20 V
34
28 V
36
0
28
32
38
-6
-4
-2
2
6
10 12 14
Frequency (GHz)
Input Power (dBm)
Power Gain vs. Input Power vs. Temp.
Power Gain vs. Freq. vs. IDQ
20
18
16
14
12
10
8
30
28
26
24
22
20
18
16
14
12
10
35 GHz
6
4
2
44 mA
30
64 mA
34
84 mA
36 38
-40 C
4
+25 C
8
+85 C
0
28
32
-6
-4
-2
0
2
6
10 12 14
Frequency (GHz)
Input Power (dBm)
Data Sheet Rev. B, May 2021 | Subject to change without notice
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QPA2225D
®
28ꢀ–ꢀ38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀLinearity
Test conditions, unless otherwise noted: CW, VD = 20 V, IDQ = 64 mA, FC = 28.5 GHz, Tone Spacing = 100 MHz, TBASE = +25 ºC
IM3 vs. Output Power vs. TBASE
IM5 vs. Output Power vs. TBASE
0
-5
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
Frequency = 28.5 GHz
Frequency = 28.5 GHz
-10
-15
-20
-25
-30
-35
-40
-40C
+25C
+85C
-40C
+25C
+85C
8
8
8
10
10
10
12
14
16
18
20
22
24
26
26
26
8
8
8
10
10
10
12
14
16
18
20
22
24
26
26
26
Output Power per Tone (dBm)
Output Power per Tone (dBm)
IM3 vs. Output Power vs. VD
IM5 vs. Output Power vs. VD
0
-5
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
Frequency = 28.5 GHz
Frequency = 28.5 GHz
-10
-15
-20
-25
-30
-35
-40
12 V
16 V
20 V
24 V
28 V
12 V
16 V
20 V
24 V
28 V
12
14
16
18
20
22
24
12
14
16
18
20
22
24
Output Power per Tone (dBm)
Output Power per Tone (dBm)
IM3 vs. Output Power vs. IDQ
IM5 vs. Output Power vs. IDQ
0
-5
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
Frequency = 28.5 GHz
Frequency = 28.5 GHz
-10
-15
-20
-25
-30
-35
-40
44 mA
64 mA
84 mA
44 mA
64 mA
84 mA
12
14
16
18
20
22
24
12
14
16
18
20
22
24
Output Power per Tone (dBm)
Output Power per Tone (dBm)
Data Sheet Rev. B, May 2021 | Subject to change without notice
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QPA2225D
®
28ꢀ–ꢀ38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀLinearity
Test conditions, unless otherwise noted: CW, VD = 20 V, IDQ = 64 mA, FC = 35 GHz, Tone Spacing = 100 MHz, TBASE = +25 ºC
IM3 vs. Output Power vs. TBASE
IM5 vs. Output Power vs. TBASE
0
-5
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
Frequency = 35 GHz
Frequency = 35 GHz
-10
-15
-20
-25
-30
-35
-40
-40C
+25C
+85C
-40C
+25C
+85C
8
8
8
10
10
10
12
14
16
18
20
22
24
26
26
26
8
8
8
10
10
10
12
14
16
18
20
22
24
26
26
26
Output Power per Tone (dBm)
Output Power per Tone (dBm)
IM3 vs. Output Power vs. VD
IM5 vs. Output Power vs. VD
0
-5
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
Frequency = 35 GHz
Frequency = 35 GHz
-10
-15
-20
-25
-30
-35
-40
12 V
16 V
20 V
24 V
28 V
12 V
16 V
20 V
24 V
28 V
12
14
16
18
20
22
24
12
14
16
18
20
22
24
Output Power per Tone (dBm)
Output Power per Tone (dBm)
IM3 vs. Output Power vs. IDQ
IM5 vs. Output Power vs. IDQ
0
-5
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
Frequency = 35 GHz
Frequency = 35 GHz
-10
-15
-20
-25
-30
-35
-40
44 mA
64 mA
84 mA
44 mA
64 mA
84 mA
12
14
16
18
20
22
24
12
14
16
18
20
22
24
Output Power per Tone (dBm)
Output Power per Tone (dBm)
Data Sheet Rev. B, May 2021 | Subject to change without notice
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QPA2225D
®
28ꢀ–ꢀ38 GHz 0.4 Watt GaN Driver Amplifier
Performance Plotsꢀ–ꢀLinearity
Test conditions, unless otherwise noted: CW, VD = 20 V, IDQ = 64 mA, FC = 38 GHz, Tone Spacing = 100 MHz, TBASE = +25 ºC
IM5 vs. Output Power vs. TBASE
IM3 vs. Output Power vs. TBASE
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
0
-5
Frequency = 38 GHz
Frequency = 38 GHz
-10
-15
-20
-25
-30
-35
-40
-40C
+25C
+85C
-40C
+25C
+85C
8
8
8
10
10
10
12
14
16
18
20
22
24
26
26
26
8
8
8
10
10
10
12
14
16
18
20
22
24
26
26
26
Output Power per Tone (dBm)
Output Power per Tone (dBm)
IM3 vs. Output Power vs. VD
IM5 vs. Output Power vs. VD
0
-5
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
Frequency = 38 GHz
Frequency = 38 GHz
-10
-15
-20
-25
-30
-35
-40
12 V
16 V
20 V
24 V
28 V
12 V
16 V
20 V
24 V
28 V
12
14
16
18
20
22
24
12
14
16
18
20
22
24
Output Power per Tone (dBm)
Output Power per Tone (dBm)
IM3 vs. Output Power vs. IDQ
IM5 vs. Output Power vs. IDQ
0
-5
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
Frequency = 38 GHz
Frequency = 38 GHz
-10
-15
-20
-25
-30
-35
-40
44 mA
64 mA
84 mA
44 mA
64 mA
84 mA
12
14
16
18
20
22
24
12
14
16
18
20
22
24
Output Power per Tone (dBm)
Output Power per Tone (dBm)
Data Sheet Rev. B, May 2021 | Subject to change without notice
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QPA2225D
®
28ꢀ–ꢀ38 GHz 0.4 Watt GaN Driver Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Value
26.9
106
Units
ºC/W
°C
Thermal Resistance (θJC) (1)
Channel Temperature, TCH (No RF) (2)
Tbase = 85 ºC, VD = 20 V, IDQ = 64 mA, PDISS = 1.28
W, No RF (quiescent DC operation)
Tbase = 85 ºC, VD = 20 V, IDQ = 64 mA, Freq = 32
GHz, ID_Drive = 165 mA, PIN = 13 dBm, POUT = 25.8
dBm, PDISS = 2.95 W
Thermal Resistance (θJC) (1)
17.3
136
ºC/W
°C
Channel Temperature, TCH (Under RF) (2)
Tbase = 85 ºC, VD = 28 V, IDQ = 64 mA, Freq = 32
GHz, ID_Drive = 158 mA, PIN = 13 dBm, POUT = 25.5
dBm, PDISS = 4.1 W
Thermal Resistance (θJC) (1)
18.1
159
ºC/W
ºC
Channel Temperature, TCH (Under RF) (2)
Notes:
1. Thermal resistance determined to the back of a 20 mil Cu-Mo carrier plate with eutectic die attach (85 ºC)
2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Dissipated Power and Maximum Gate Current
Dissipated Power vs. Freq. vs. VD
TBASE = 85 ºC
IG_MAX vs. TCH
40
35
30
25
20
15
10
5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
Total Ig
Each Stage Ig
20 V
28
22 V
32
24 V
34
26 V
38
28 V
40
0
26
30
36
42
110
120
130
140
150
160
170
180
Frequency (GHz)
Channel Temperature (°C)
Test conditions, unless otherwise noted: CW, VD = 20 V, IDQ = 64 mA, PIN = +13dBm, TBASE = +85ꢁºC
Data Sheet Rev. B, May 2021 | Subject to change without notice
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QPA2225D
®
28ꢀ–ꢀ38 GHz 0.4 Watt GaN Driver Amplifier
Applications Information
Bias-Down Procedure
Bias-Up Procedure
1. Set ID limit to 250 mA, IG limit to 10 mA
2. Set VG to −4.0 V
1. Turn off RF signal
2. Reduce VG to −4.0 V. Ensure IDQ ~ 0 mA
4. Set VD to 0 V
3. Set VD +20 V
5. Turn off VD supply
4. Adjust VG more positive until IDQ 64 mA
5. Apply RF signal
6. Turn off VG supply
Data Sheet Rev. B, May 2021 | Subject to change without notice
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QPA2225D
®
28ꢀ–ꢀ38 GHz 0.4 Watt GaN Driver Amplifier
Evaluation Board (EVB) Layout Assembly
PCB is made from Rogers 4003C dielectric, 0.008 inch thick, 0.5 oz. copper both sides.
Bill of Materials
Reference Des.
Value
Description
Manuf.
Part Number
C1, C3
10 uF
CAP, 10 uF, 20%, 50 V, 20%, X5R, 1206
Various
C2, C4
R1
0.01 uF
5.1 Ω
CAP, 0.01 uF, 10%, 50 V, X7R, 0402
RES, 5.1 OHM, 5%, 50 V, 0402
RES, 0 OHM, JMPR, 0402
Various
Various
Various
R2, R3, R4
J1, J2
0 Ω
2.4 mm
CONNECTOR, FEMALE, ENDLAUNCH Southwest Microwave
1492-04A-5
Data Sheet Rev. B, May 2021 | Subject to change without notice
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QPA2225D
®
28ꢀ–ꢀ38 GHz 0.4 Watt GaN Driver Amplifier
Mechanical Information
Dimensions are in mm
Thickness: 0.050
Die x, y size tolerance: ± 0.050
Ground is backside of die
Bond Pad Description
Pad No.
Symbol
Pad Size (mm) Description
1
RF In
0.087 x 0.188
RF Input; matched to 50ꢀΩ, DC blocked
Gate voltage, bias network is required; see Application Circuit on
page 19 as an example.
2
VG
0.081 x 0.086
Drain voltage, bias network is required; see Application Circuit on
page 19 as an example.
3
4
VD
0.110 x 0.086
0.087 x 0.188
RF Out
RF Output; matched to 50ꢀΩ, DC blocked
Data Sheet Rev. B, May 2021 | Subject to change without notice
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QPA2225D
®
28ꢀ–ꢀ38 GHz 0.4 Watt GaN Driver Amplifier
Assembly Notes
Component placement and adhesive attachment assembly notes:
•
•
•
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Reflow process assembly notes:
•
•
•
•
•
Use AuSn (80/20) solder and limit exposure to temperatures above 300ꢀ°C to 3ꢀ–ꢀ4 minutes, maximum.
An alloy station or conveyor furnace with reducing atmosphere should be used.
Do not use any kind of flux.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
•
•
•
•
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonic are critical parameters.
Aluminum wire should not be used.
Devices with small pad sizes should be bonded with 0.0007-inch wire.
Data Sheet Rev. B, May 2021 | Subject to change without notice
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QPA2225D
®
28ꢀ–ꢀ38 GHz 0.4 Watt GaN Driver Amplifier
Handling Precautions
Parameter
Rating Standard
1B ANSI/ESD/JEDEC JS-001
Caution!
ESDꢀ–ꢀHuman Body Model (HBM)
ESD-Sensitive Device
Solderability
Use only AuSn (80/20) solder, and limit exposure to temperatures above 300ꢀ°C to 3ꢀ–ꢀ4 minutes, maximum.
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2019 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet Rev. B, May 2021 | Subject to change without notice
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