42672-00 [PSEMI]

SP7T UltraCMOS? 2.75 V Switch 100 - 3000 MHz, +68 dBM IIP3; SP7T的UltraCMOS ? 2.75 V开关100 - 3000兆赫, 68为dBM IIP3
42672-00
型号: 42672-00
厂家: Peregrine Semiconductor    Peregrine Semiconductor
描述:

SP7T UltraCMOS? 2.75 V Switch 100 - 3000 MHz, +68 dBM IIP3
SP7T的UltraCMOS ? 2.75 V开关100 - 3000兆赫, 68为dBM IIP3

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文件: 总4页 (文件大小:171K)
中文:  中文翻译
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Advance Information  
PE42672 DIE  
SP7T UltraCMOS™ 2.75 V Switch  
100 – 3000 MHz, +68 dBM IIP3  
Figure 1. Functional Diagram  
Features  
Dedicated TX1 port for WCDMA, TX2  
and TX3 ports for GSM/EDGE  
Three pin CMOS logic control with  
integral decoder/driver  
Exceptional harmonic performance:  
2fo = -84 dBc and 3fo = -77 dBc  
Low TX insertion loss: 0.50 dB at  
900 MHz, 0.70 dB at 1900 MHz  
TX – RX Isolation of 44 dB at 900 MHz,  
38 dB at 1900 MHz  
TX1  
TX2  
RX1  
RX2  
WCDMA  
GSM/EDGE  
RX3  
RX4  
TX3  
GSM/EDGE  
1500 V HBM ESD tolerance all ports  
+68 dBm IIP3  
CMOS  
Control/Driver  
and ESD  
-111 dBm IMD3  
No blocking capacitors required  
V1  
V2  
V3  
Product Description  
Figure 2. Die Top View*  
TX1  
The PE42672 is a HaRP™-enhanced SP7T  
RF Switch developed on the UltraCMOS™  
process technology. It addresses the specific  
design needs of the Quad-Band GSM Handset  
Antenna Switch Module Market for use in  
GSM/EDGE/PCS/DCS/WCDMA handsets.  
The switch is comprised of three TX ports and  
four RX ports. TX1 is designed for WCDMA  
and TX2 and TX3 are designed for GSM/  
EDGE. The four symmetric RX ports can be  
used for GSM/EDGE/PCS RX. On-chip CMOS  
decoder logic facilitates three-pin low voltage  
CMOS control, while high ESD tolerance of  
1500 V at all ports, no blocking capacitor  
requirements, and on-chip SAW filter over-  
voltage protection devices make this the  
ultimate in integration and ruggedness.  
ANT RX1  
GND  
RX2  
GND  
TX2  
GND  
RX3  
GND  
RX4  
GND  
TX3  
GND  
GND  
GND VDD  
V3 GN V2 V1 GND  
Peregrine’s HaRP™ technology  
enhancements deliver high linearity and  
exceptional harmonics performance. It is an  
innovative feature of the UltraCMOS™  
process, providing performance superior to  
GaAs with the economy and integration of  
conventional CMOS.  
1006 µm  
* Dimensions shown are drawn die size.  
Document No. 70-0197-01 www.psemi.com  
©2005 Peregrine Semiconductor Corp. All rights reserved.  
Contact sales@psemi.com for full version of datasheet  
Page 1 of 4  
PE42672  
Advance Information  
Table 1. Target Electrical Specifications @ 25 °C, VDD = 2.75 V  
Parameter  
Condition  
Typ  
Units  
TX - Ant (850 / 900)  
TX - Ant (1800 / 1900)  
TX - Ant ( 2200 UMTS )  
RX - Ant (850 / 900)  
RX - Ant (1800 / 1900)  
0.5  
0.7  
0.8  
0.8  
1.0  
dB  
dB  
dB  
dB  
dB  
Insertion loss1  
Return Loss  
Isolation  
Port under test in on state  
20  
dB  
TX - RX (850 / 900)  
TX - RX (1800 / 1900)  
TX - TX (850 / 900)  
TX - TX (1800 / 1900)  
TX1 - RX (1900 / 2200)  
44  
38  
29  
23  
37  
dB  
dB  
dB  
dB  
dB  
-84  
-80  
dBc  
dBc  
TX 850 / 900 MHz, +35 dBm output power, 50 Ω  
TX 1800 / 1900 MHz, +33 dBm output power, 50 Ω  
2nd Harmonic  
-77  
-73  
dBc  
dBc  
TX 850 / 900 MHz, +35 dBm output power, 50 Ω  
TX 1800 / 1900 MHz, +33 dBm output power, 50 Ω  
3rd Harmonic  
TX1 Measured at 2.14 GHz at Ant port, input +20 dBm CW signal  
at 1.95 GHz and -15 dBm CW signal at 1.76 GHz  
IMD3 distortion at 2.14 GHz  
-111  
dBm  
Note: 1. Insertion loss specified with optimal impedance matching.  
Table 2. Operating Ranges  
Table 3. Absolute Maximum Ratings  
Symbol  
Parameter/Conditions  
Min  
Max  
Units  
Parameter  
Symbol  
Min  
Typ Max Units  
VDD  
VI  
Power supply voltage  
Voltage on any input  
-0.3  
4.0  
V
V
Temperature range  
TOP  
-40  
+85  
°C  
V
-0.3 VDD+ 0.3  
VDD Supply Voltage  
VDD  
2.65 2.75 2.85  
TST  
Storage temperature range  
-65  
+150  
+38  
+23  
+35  
°C  
IDD Power Supply Current  
(VDD = 2.75 V)  
3,4  
IDD  
µA  
13  
50  
TX input power (50 )  
PIN(50 )  
dBm  
3,4  
RX input power (50 )  
TX input power2  
(VSWR 3:1)  
PIN  
PIN  
+35  
+20  
dBm  
dBm  
dBm  
V
P
IN (:1) TX input power (VSWR = :1) 3,4  
RX input power2  
(VSWR =1:1)  
ESD Voltage (HBM, MIL_STD  
883 Method 3015.7)  
1500  
1700  
VESD  
Control Voltage High  
Control Voltage Low  
VIH  
VIL  
1.4  
V
V
ESD Voltage at ANT Port  
(IEC 61000-4-2)  
V
0.4  
Note: 3. Assumes RF input period of 4620 µs and duty cycle of 50%.  
Note: 2. Assumes RF input period of 4620 µs and duty cycle of 50%.  
4. VDD within operating range specified in Table 2.  
Part performance is not guaranteed under these  
conditions. Exposure to absolute maximum  
conditions for extended periods of time may  
adversely affect reliability. Stresses in excess of  
absolute maximum ratings may cause permanent  
damage.  
©2005 Peregrine Semiconductor Corp. All rights reserved.  
Document No. 70-0197-01 UltraCMOS™ RFIC Solutions  
Page 2 of 4  
Contact sales@psemi.com for full version of datasheet  
PE42672  
Advance Information  
Table 4. Pin Descriptions  
Figure 3. Pad Configuration (Top View)  
Pin No.  
Pin Name  
Description  
RF Common – Antenna  
1
ANT  
2
22  
1
TX1  
RX1  
26  
35  
TX1  
GND  
TX2  
GND  
TX3  
GND  
GND  
VDD  
RF I/O - TX1  
21  
20  
GND  
RX2  
GND  
RX3  
3
4
Ground (Requires two bond wires)  
GND  
TX2  
19  
18  
46  
RF I/O – TX2  
PE42672  
Die  
55  
Ground  
5
6
17  
16  
GND  
RX4  
GND  
TX3  
65  
RF I/O – TX3  
15  
14  
GND  
75  
Ground  
7
GND  
GND  
85  
Ground  
6
8
9
11  
13  
10  
12  
9
Supply  
10  
115  
12  
13  
145  
155  
166  
175  
186  
195  
206  
215  
226  
V3  
Switch control input, CMOS logic level  
GND  
V2  
Ground  
Switch control input, CMOS logic level  
Table 5. Truth Table  
V1  
Switch control input, CMOS logic level  
Path  
RX1 - ANT  
RX2 - ANT  
RX3 - ANT  
RX4 - ANT  
TX1 - ANT  
TX2 - ANT  
TX3 - ANT  
All Off  
V1  
0
1
V2  
0
0
V3  
0
0
GND  
GND  
RX4  
GND  
RX3  
GND  
RX2  
GND  
RX1  
Ground  
Ground  
0
1
0
RF I/O – RX4  
Ground  
1
1
0
0
1
0
0
1
1
RF I/O – RX3  
Ground  
0
1
1
1
1
1
RF I/O – RX2  
Ground  
Electrostatic Discharge (ESD) Precautions  
When handling this UltraCMOS™ device, observe  
the same precautions that you would use with other  
ESD-sensitive devices. Although this device  
contains circuitry to protect it from damage due to  
ESD, precautions should be taken to avoid  
exceeding the specified rating.  
RF I/O – RX1  
Notes: 5. Bond wires should be physically short and connected to  
ground plane for best performance.  
6. Blocking capacitors needed only when non-zero DC  
voltage present.  
Latch-Up Avoidance  
Unlike conventional CMOS devices, UltraCMOS™  
devices are immune to latch-up.  
Table 6. Ordering Information  
Order Code  
Description  
PE42672-DIE-D  
Package  
Film Frame  
Shipping Method  
42672-90  
42672-99  
42672-00  
Wafer (Gross Die / Wafer Quantity)  
400 Dice / Waffle Pack  
1/ box  
PE42672-DIE-400G  
PE42672-DIE-1H  
Waffle Pack  
Evaluation Kit  
Document No. 70-0197-01 www.psemi.com  
©2005 Peregrine Semiconductor Corp. All rights reserved.  
Contact sales@psemi.com for full version of datasheet  
Page 3 of 4  
PE42672  
Advance Information  
Sales Offices  
The Americas  
North Asia Pacific  
Peregrine Semiconductor Corp.  
9450 Carroll Park Drive  
San Diego, CA 92121  
Peregrine Semiconductor K.K.  
5A-5, 5F Imperial Tower  
1-1-1 Uchisaiwaicho, Chiyoda-ku  
Tokyo 100-0011 Japan  
Tel 858-731-9400  
Fax 858-731-9499  
Tel: +81-3-3502-5211  
Fax: +81-3-3502-5213  
Europe  
South Asia Pacific  
Peregrine Semiconductor Europe  
Commercial Products:  
Bâtiment Maine  
13-15 rue des Quatre Vents  
F- 92380 Garches, France  
Tel: +33-1-47-41-91-73  
Peregrine Semiconductor  
28G, Times Square,  
No. 500 Zhangyang Road,  
Shanghai, 200122, P.R. China  
Tel: +86-21-5836-8276  
Fax: +86-21-5836-7652  
Fax : +33-1-47-41-91-73  
Space and Defense Products:  
180 Rue Jean de Guiramand  
13852 Aix-En-Provence cedex 3, France  
Tel: +33(0) 4 4239 3361  
Fax: +33(0) 4 4239 7227  
For a list of representatives in your area, please refer to our Web site at: www.psemi.com  
Data Sheet Identification  
Advance Information  
The information in this data sheet is believed to be reliable.  
However, Peregrine assumes no liability for the use of this  
information. Use shall be entirely at the user’s own risk.  
The product is in a formative or design stage. The data  
sheet contains design target specifications for product  
development. Specifications and features may change in  
any manner without notice.  
No patent rights or licenses to any circuits described in this  
data sheet are implied or granted to any third party.  
Preliminary Specification  
Peregrine’s products are not designed or intended for use in  
devices or systems intended for surgical implant, or in other  
applications intended to support or sustain life, or in any  
application in which the failure of the Peregrine product could  
create a situation in which personal injury or death might occur.  
Peregrine assumes no liability for damages, including  
consequential or incidental damages, arising out of the use of  
its products in such applications.  
The data sheet contains preliminary data. Additional data  
may be added at a later date. Peregrine reserves the right  
to change specifications at any time without notice in order  
to supply the best possible product.  
Product Specification  
The data sheet contains final data. In the event Peregrine  
decides to change the specifications, Peregrine will notify  
customers of the intended changes by issuing a DCN  
(Document Change Notice).  
The Peregrine name, logo, and UTSi are registered trademarks  
and UltraCMOS and HaRP are trademarks of Peregrine  
Semiconductor Corp.  
©2005 Peregrine Semiconductor Corp. All rights reserved.  
Document No. 70-0197-01 UltraCMOS™ RFIC Solutions  
Page 4 of 4  
Contact sales@psemi.com for full version of datasheet  

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