PSW1C75 [POWERSEM]

Single Phase AC Controller Subassemblies; 单相AC控制器的子装配体
PSW1C75
型号: PSW1C75
厂家: POWERSEM GMBH    POWERSEM GMBH
描述:

Single Phase AC Controller Subassemblies
单相AC控制器的子装配体

控制器
文件: 总2页 (文件大小:85K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Subassembly  
Single Phase AC Controller  
Subassemblies  
PSW1C75  
IRMS = 86 A  
VRRM= 800-1400 V  
Preliminary Data Sheet  
VRSM VRRM  
VDSM VDRM  
Type  
(V)  
(V)  
900 800 PSW1C 75/08  
1300 1200 PSW1C 75/12  
1500 1400 PSW1C 75/14  
Symbol  
IRMS  
Test Conditions  
Maximum Ratings  
Features  
TC = 85°C; 50-400Hz (per phase)  
TC = 85 °C; 180° sine  
86  
39  
A
A
ITAVM  
Planar glass passivated chips  
Low forward voltage drop  
Leads suitable for PC board  
soldering  
ITSM  
TVJ = 45 °C t = 10 ms (50 Hz), sine  
1000  
1100  
900  
A
A
A
VR = 0  
TVJ = 125 °C t = 10 ms (50 Hz), sine  
VR = 0 t = 8.3 ms (60 Hz), sine  
TVJ = 45 °C t = 10 ms (50 Hz), sine  
VR = 0 t = 8.3 ms (60 Hz), sine  
TVJ = 125 °C t = 10 ms (50 Hz), sine  
VR = 0 t = 8.3 ms (60 Hz), sine  
t = 8.3 ms (60 Hz), sine  
1000  
5000  
5020  
4050  
4150  
A
i2 dt  
A²s  
A²s  
A²s  
A²s  
Applications  
Solid state relays  
Advantages  
(di/dt)cr  
TVJ = 125 °C repetitive, IT = 150 A  
f=50Hz, tP=200µs  
VD=2/3VDRM  
150 A/µs  
Space and weight savings  
Improved temperature and power  
cycling capability  
IG=0.45 A  
non repetitive,IT = ITAVM  
500 A/µs  
High power density  
Small and light weight  
diG/dt=0.45A/µs  
(dv/dt)cr  
PGM  
TVJ = 125 °C VD=2/3VDRM  
RGK= , method 1 (linear voltage rise)  
TVJ = 125 °C tP=30µs  
1000 V/µs  
10  
5
0.5  
10  
W
W
W
V
IT =ITAVM  
tP=300µs  
PGAVM  
VRGM  
TVJ  
-40... + 125  
°C  
°C  
°C  
g
TVJM  
Tstg  
125  
-40... + 125  
9
Weight  
typ.  
Data according to IEC 60747 refer to a single thyristor unless otherwise stated  
2005 POWERSEM reserves the right to change limits, test conditions and dimensions  
POWERSEM GmbH, Walpersdorfer Str. 53  
D - 91126 Schwabach  
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  
Subassembly  
Symbol  
ID,IR  
VT  
VTO  
rT  
VGT  
Test Conditions  
Characteristic Value  
TVJ = 125°C, VR = VRRM, VD=VDRM  
IT = 200 A, TVJ = 25 °C  
For power-loss calculations only  
5
1.55  
0.85  
mA  
V
V
4.0 mΩ  
VD=6V  
VD=6V  
TVJ= 25°C  
TVJ=-40°C  
TVJ= 25°C  
TVJ=-40°C  
1.5  
1.6  
100  
200  
0.2  
10  
V
V
mA  
mA  
V
IGT  
VGD  
IGD  
IL  
TVJ= 125°C VD=2/3VDRM  
TVJ= 125°C VD=2/3VDRM  
TVJ= 25°C, tP=10µs, VD=6V  
IG=0.45A, diG/dt=0.45A/µs  
TVJ= 25°C, VD=6V, RGK= ∞  
TVJ= 25°C, VD=1/2VDRM  
mA  
mA  
450  
IH  
tgd  
200  
2
mA  
µs  
IG=0.45A, diG/dt=0.45A/µs  
tq  
TVJ= TVJM; IT=120A; tp=200µs;-di/dt=10A/µs typ. 150  
VR=100V; dv/dt=20V/µs; VD=2/3VDRM  
µs  
RthJC  
a
per thyristor; DC  
0.8 K/W  
0.4 K/W  
50 m/s²  
per module  
Max. allowable acceleration  
Package style and outline  
Dimensions in mm (1mm = 0.0394“)  
2005 POWERSEM reserves the right to change limits, test conditions and dimensions  
POWERSEM GmbH, Walpersdorfer Str. 53  
D - 91126 Schwabach  
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  

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