FS20UM-6 [POWEREX]
Nch POWER MOSFET HIGH-SPEED SWITCHING USE; N沟道功率MOSFET的高速开关使用型号: | FS20UM-6 |
厂家: | POWEREX POWER SEMICONDUCTORS |
描述: | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
文件: | 总4页 (文件大小:51K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MITSUBISHI Nch POWER MOSFET
FS20UM-6
HIGH-SPEED SWITCHING USE
FS20UM-6
OUTLINE DRAWING
Dimensions in mm
4.5
1.3
10.5MAX.
r
φ 3.6
1.0
0.8
2.54
2.54
0.5
2.6
q
w e
w r
q GATE
w DRAIN
e SOURCE
r DRAIN
q
¡VDSS ................................................................................ 300V
¡rDS (ON) (MAX) .............................................................. 0.26Ω
¡ID ..........................................................................................20A
e
TO-220
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
300
Unit
V
VGS = 0V
VDS = 0V
±30
V
20
A
IDM
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
60
A
PD
150
W
°C
°C
g
Tch
–55 ~ +150
–55 ~ +150
2.0
Tstg
—
Typical value
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS20UM-6
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
300
±30
—
Typ.
—
Max.
—
V
V
(BR) DSS Drain-source breakdown voltage ID = 1mA, VGS = 0V
(BR) GSS Gate-source breakdown voltage IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
Drain-source leakage current VDS = 300V, VGS = 0V
Gate-source threshold voltage ID = 1mA, VDS = 10V
V
V
—
—
IGSS
IDSS
Gate-source leakage current
—
±10
1
µA
mA
V
—
—
VGS (th)
rDS (ON)
VDS (ON)
yfs
2
3
4
Drain-source on-state resistance ID = 10A, VGS = 10V
Drain-source on-state voltage ID = 10A, VGS = 10V
—
0.20
2.0
13.0
1400
280
55
0.26
2.6
—
Ω
—
V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
ID = 10A, VDS = 10V
8.5
—
S
Ciss
—
pF
pF
pF
ns
ns
ns
ns
V
Coss
Crss
VDS = 25V, VGS = 0V, f = 1MHz
—
—
—
—
td (on)
tr
—
25
—
—
50
—
VDD = 150V, ID = 10A, VGS = 10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
Fall time
—
150
65
—
—
—
VSD
Source-drain voltage
Thermal resistance
IS = 10A, VGS = 0V
Channel to case
—
1.5
—
2.0
0.83
Rth (ch-c)
—
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
200
160
120
80
102
7
5
tw=10µs
100µs
3
2
101
7
5
1ms
10ms
DC
3
2
100
7
5
40
TC = 25°C
Single Pulse
3
2
10–1
0
0
50
100
150
200
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
2
CASE TEMPERATURE
TC
(°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS=20V
P
D
= 150W
50
40
30
20
10
0
20
16
12
8
10V
PD = 150W
VDS = 20V
T
C
= 25°C
6V
5.5V
10V
Pulse Test
7V
5V
6V
5V
4.5V
4
TC = 25°C
Pulse Test
4V
20
DRAIN-SOURCE VOLTAGE
0
0
10
30
40
50
0
4
8
12
16
20
V
DS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS20UM-6
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
0.5
0.4
0.3
0.2
20
16
12
8
T
C
= 25°C
T
C
= 25°C
Pulse Test
Pulse Test
V
GS = 10V
ID
= 40A
20V
20A
10A
4
0.1
0
0
0
4
8
12
16
20
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE-SOURCE VOLTAGE
VGS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
40
32
24
16
8
102
7
5
TC
= 25°C
DS = 50V
Pulse Test
VDS = 10V
V
Pulse Test
3
2
TC = 25°C
101
7
5
75°C
125°C
3
2
0
100
0
4
8
12
16
20
100
2
3
5 7 101
2
3
5 7 102
GATE-SOURCE VOLTAGE
VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
5
103
7
5
Tch = 25°C
3
2
V
DD = 150V
GS = 10V
V
Ciss
R
GEN = RGS = 50Ω
103
7
3
2
t
d(off)
5
3
2
102
7
5
Coss
Crss
t
f
r
102
7
5
t
3
2
3
2
Tch = 25°C
f = 1MHz
t
d(on)
V
GS = 0V
101
101
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
100
2
3
5 7 101
2
3
5 7 102
DRAIN-SOURCE VOLTAGE DS (V)
V
DRAIN CURRENT
ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS20UM-6
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
16
12
8
40
32
24
16
8
V
GS = 0V
Tch = 25°C
= 20A
Pulse Test
I
D
TC = 125°C
V
DS = 50V
25°C
75°C
100V
200V
4
0
0
0
20
40
60
80
100
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE
Qg
(nC)
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
5
5.0
4.0
3.0
2.0
1.0
0
V
DS = 10V
= 1mA
V
GS = 10V
I
D
ID = 1/2ID
Pulse Test
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
1.4
1.2
1.0
0.8
0.6
0.4
V
I
GS = 0V
D = 1mA
5
3
2
100
7
D=1
0.5
5
3
0.2
0.1
P
DM
2
10–1
7
tw
T
tw
T
0.05
0.02
0.01
5
D=
3
2
Single Pulse
10–2
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH (s)
t
w
Feb.1999
相关型号:
FS20VS-5-T1
Power Field-Effect Transistor, 20A I(D), 250V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
MITSUBISHI
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