BCR12CS [POWEREX]
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE; 中功率使用非绝缘型，平面型钝化
| 型号： | BCR12CS |
| 厂家： | 
POWEREX POWER SEMICONDUCTORS |
| 描述： | MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
| 文件： | 总5页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR TRIAC
BCR12CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Dimensions
BCR12CS
OUTLINE DRAWING
in mm
4
10.5 MAX
4.5
1.3
TYPE
NAME
+0.3
–0
0
VOLTAGE
CLASS
1
5
0.5
0.8
1
2 3
Measurement
point of case
temperature
2 4
T
1
TERMINAL
TERMINAL
1
2
3
4
T
2
• IT (RMS) ...................................................................... 12A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ......................... 30mA (20mA)
GATE TERMINAL
TERMINAL
3
1
T
2
✽5
TO-220S
APPLICATION
Solid state relay, hybrid IC
MAXIMUM RATINGS
Voltage class
Symbol
Parameter
Unit
8
12
✽1
VDRM
VDSM
Repetitive peak off-state voltage
400
500
600
720
V
V
✽1
Non-repetitive peak off-state voltage
Symbol
Parameter
RMS on-state current
Surge on-state current
Conditions
Ratings
12
Unit
A
IT (RMS)
ITSM
Commercial frequency, sine full wave 360° conduction, Tc=98°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
120
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
2
2
2
I t
I t for fusing
60
A s
PGM
PG (AV)
VGM
IGM
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
5
0.5
10
2
W
W
V
Peak gate current
A
Tj
Junction temperature
Storage temperature
Weight
–40 ~ +125
–40 ~ +125
1.2
°C
°C
g
Tstg
—
Typical value
✽1. Gate open.
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR12CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Unit
Min.
—
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.6
1.5
1.5
1.5
mA
V
IDRM
Repetitive peak off-state current
On-state voltage
Tj=125°C, VDRM applied
VTM
Tc=25°C, ITM=20A, Instantaneous measurement
—
!
@
#
!
@
#
—
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
V
✽2
—
V
Gate trigger voltage
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
—
V
✽5
—
30
30
30
—
mA
mA
mA
V
✽5
✽5
✽2
—
Gate trigger current
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C, VD=1/2VDRM
—
0.2
—
Gate non-trigger voltage
Thermal resistance
✽4
1.8
°C/W
Rth (j-c)
Junction to case
Critical-rate of rise of off-state
commutating voltage
✽3
—
—
V/µs
(dv/dt)c
✽2. Measurement using the gate trigger characteristics measurement circuit.
✽3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
✽5. High sensitivity (IGT≤20mA) is also available. (IGT item 1)
(dv/dt) c
Voltage
class
VDRM
(V)
Commutating voltage and current waveforms
(inductive load)
Test conditions
Symbol
Min.
—
Unit
R
SUPPLY
1. Junction temperature
VOLTAGE
TIME
8
400
600
Tj=125°C
L
R
L
10
—
10
2. Rate of decay of on-state commutat-
ing current
(di/dt)c=–6A/ms
(di/dt)c
MAIN CURRENT
V/µs
TIME
TIME
MAIN
VOLTAGE
3. Peak off-state voltage
VD=400V
12
(dv/dt)c
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
RATED SURGE ON-STATE CURRENT
102
200
180
160
140
120
100
80
7
5
3
2
Tj = 125°C
101
7
5
3
2
Tj = 25°C
100
7
5
3
2
60
40
20
10–1
0
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
100
2
3 4 5 7 101
2
3 4 5 7 102
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR12CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
GATE CHARACTERISTICS
102
7
TYPICAL EXAMPLE
7
5
5
4
3
3
2
V
GM = 10V
I
RGT I, IRGT III
P
GM = 5W
101
7
5
3
2
2
P
G(AV) =
0.5W
I
GM = 2A
102
7
V
GT = 1.5V
I
FGT I
100
7
5
5
4
3
3
2
2
I
RGT I
I
FGT I,
I
RGT III
VGD = 0.2V
10–1
101
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
–60–40–20 0 20 40 60 80 100120140
GATE CURRENT (mA)
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
102 2 3 5 7 103
2.4
2
103
TYPICAL EXAMPLE
7
5
4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
3
2
102
7
5
4
3
2
101
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
–60–40–20 0 20 40 60 80 100120140
JUNCTION TEMPERATURE (°C)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
32
160
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
28
24
20
16
12
8
140
120
100
80
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
60
360°
40
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
4
20
0
0
0
2
4
6
8
10 12 14 16
0
2
4
6
8
10 12 14 16
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR12CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
160
NATURAL CONVECTION
NO FINS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
ALL FINS ARE COPPER
AND ALUMINUM
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
140
120
100
80
140
120
RESISTIVE, INDUCTIVE LOADS
100
120 120 t2.3
100 100 t2.3
60 60 t2.3
80
60
40
20
0
60
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
40
20
0
0
2
4
6
8
10 12 14 16
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
105
7
103
7
5
4
TYPICAL EXAMPLE
TYPICAL EXAMPLE
5
3
2
3
104
7
5
3
2
2
102
7
103
7
5
5
4
3
3
2
2
102
101
–60–40–20 0 20 40 60 80 100120140
–60–40–20 0 20 40 60 80 100120140
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
103
160
7
5
TYPICAL EXAMPLE
140
120
100
80
DISTRIBUTION
T+, G–
TYPICAL
EXAMPLE
2
3
2
102
7
5
3
2
60
101
7
5
40
3
2
T+
T–
2
, G+ TYPICAL
, G– EXAMPLE
20
2
100
0
–40
0
40
80
120
160
–60–40–20 0 20 40 60 80 100120140
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR12CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
COMMUTATION CHARACTERISTICS
160
140
120
100
80
VOLTAGE WAVEFORM
TYPICAL
EXAMPLE
TYPICAL EXAMPLE
3
2
t
Tj = 125°C
VD
(dv/dt)
C
T
j
= 125°C
102
7
5
3
2
I
T = 4A
CURRENT WAVEFORM
τ = 500µs
= 200V
(di/dt)
C
I
T
# 2
III QUADRANT
VD
τ
t
f = 3Hz
101
7
5
I QUADRANT
60
3
2
MINIMUM
CHARAC-
TERISTICS
VALUE
# 1
40
100
7
III QUADRANT
20
I QUADRANT
5
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
103
TYPICAL EXAMPLE
7
I
FGT I
5
4
3
A
A
I
RGT I
6V
6V
I
RGT III
R
G
RG
V
V
2
102
7
5
4
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
3
2
A
6V
RG
101
V
100
2
3 4 5 7 101
2
3 4 5 7 102
TEST PROCEDURE 3
GATE CURRENT PULSE WIDTH (µs)
Feb.1999
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