ATF1047S14Y [POSEICO]
FAST SWITCHING THYRISTOR;
| 型号： | ATF1047S14Y |
| 厂家： | 
POWER SEMICONDUCTORS |
| 描述： | FAST SWITCHING THYRISTOR 开关 |
| 文件： | 总3页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
FAST SWITCHING THYRISTOR
ATF1047
Repetitive voltage up to
Mean on-state current
Surge current
1400 V
1305 A
16 kA
FINAL SPECIFICATION
Turn-off time
30 µs
mag 06 - ISSUE : 06
Tj
Symbol
Characteristic
Conditions
Value
Unit
[°C]
BLOCKING
V RRM
V RSM
V DRM
I RRM
I DRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
125
125
125
125
125
1400
1500
1400
100
V
V
V
V=VRRM
V=VDRM
mA
mA
100
CONDUCTING
I T (AV)
I T (AV)
I TSM
I² t
Mean on-state current
Mean on-state current
Surge on-state current, non repetitive
I² t
180°sin, 50 Hz, Th=55°C, double side cooled
180°sin, 1 kHz,T h=55°C, double side cooled
sine wave, 10 ms
1305
1230
16
A
A
125
kA
without reverse voltage
1280 x1E3
2
A²s
V
V T
On-state voltage
On-state current =
2000 A
25
V T(TO)
r T
Threshold voltage
125
1,32
V
On-state slope resistance
125 0,230
mohm
SWITCHING
di/dt
dv/dt
td
Critical rate of rise of on-state current, min
Critical rate of rise of off-state voltage, min
Gate controlled delay time, typical
From 75% VDRM up to 2000 A, gate 20V 10 ohm
Linear ramp up to 70% of VDRM
125
125
25
500
600
0,6
30
A/µs
V/µs
µs
VD=100V, gate source 20V, 10 ohm , tr=1 µs
tq
Circuit commutated turn-off time
di/dt = 20
dV/dt = 200 V/µs , up to 75% VDRM
di/dt = 60 A/µs, I I = 1000
VR = 50
A/µs, I I = 800
A
125
µs
Q rr
I rr
I H
Reverse recovery charge
Peak reverse recovery current
Holding current, typical
A
125
650
230
80
µC
A
V
VD=5V, gate open circuit
VD=5V, tp=30µs
25
25
mA
mA
I L
Latching current, typical
230
GATE
V GT
I GT
Gate trigger voltage
VD=5V
25
25
125
25
25
25
25
25
3,5
350
0,25
30
V
mA
V
Gate trigger current
VD=5V
V GD
V FGM
Non-trigger gate voltage, min.
Peak gate voltage (forward)
Peak gate current
VD=VDRM
V
I
FGM
10
A
V RGM
P GM
Peak gate voltage (reverse)
Peak gate power dissipation
Average gate power dissipation
5
V
Pulse width 100 µs
150
3
W
W
P G(AV)
MOUNTING
R th(j-h)
T j
Thermal impedance, DC
Operating junction temperature
Mounting force
Junction to heatsink, double side cooled
26
°C/kW
°C
-30 / 125
14.0 / 17.0
500
F
kN
Mass
g
tq code
D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs
M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs
T 60 µs U 70 µs W 80 µs X 100µs Y 150µs
tq code
ORDERING INFORMATION : ATF1047 S 14 M
VDRM&VRRM/100
standard specification
POSEICO
POSEICO SPA
ATF1047 FAST SWITCHING THYRISTOR
POwer SEmiconductors Italian COrporation
FINAL SPECIFICATION mag 06 - ISSUE : 06
SWITCHING CHARACTERISTICS
REVERSE RECOVERY CHARGE
Tj = 125 °C
1400
1200
1000
800
600
400
200
0
1000 A
500 A
250 A
0
50
100
150
200
250
300
350
400
di/dt [A/µs]
REVERSE RECOVERY CURRENT
Tj = 125 °C
800
600
400
200
0
1000 A
500 A
250 A
0
50
100
150
200
250
300
350
400
di/dt [A/µs]
di/dt
ta
ta = Irr / (di/dt)
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 )
tb = trr - ta
IF
tb
Irr
Vr
POSEICO
ATF1047 FAST SWITCHING THYRISTOR
POSEICO SPA
POwer SEmiconductors Italian COrporation
FINAL SPECIFICATION mag 06 - ISSUE : 06
ON-STATE CHARACTERISTIC
Tj = 125 °C
SURGE CHARACTERISTIC
Tj = 125 °C
4500
4000
3500
3000
2500
2000
1500
1000
500
18
16
14
12
10
8
6
4
2
0
0
0,6
1,1
1,6
2,1
2,6
1
10
100
On-state Voltage [V]
n°cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
35
30
25
20
15
10
5
0
0,001
0,01
0,1
1
10
100
t[s]
Cathode terminal type DIN 46244 - A 4.8 - 0.8
Gate terminal type AMP 60598 - 1
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and
roughness < 2 µm.
In the interest of product improvement POSEICO S.p.A reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
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