ARF2012 [POSEICO]
FAST RECOVERY DIODE; 快恢复二极管
| 型号： | ARF2012 |
| 厂家： | 
POWER SEMICONDUCTORS |
| 描述： | FAST RECOVERY DIODE |
| 文件： | 总4页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
ANSALDO
Tx 270318 ANSUSE I -
FAST RECOVERY DIODE
ARF2012
Repetitive voltage up to
Mean forward current
Surge current
2600 V
1525 A
16 kA
FINAL SPECIFICATION
apr 97 - ISSUE : 04
Tj
[°C]
Symbol
Characteristic
Conditions
Value
Unit
BLOCKING
V RRM
V RSM
I RRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak reverse current
150 2600
150 2700
V
V
V=VRRM
150
50
mA
CONDUCTING
I F (AV)
Mean forward current
180° sin ,50 Hz, Th=55°C, double side cooled
180° square,50 Hz,Th=55°C,double side cooled
1525
A
I F (AV)
I FSM
I² t
Mean forward current
Surge forward current
I² t
1545
16
A
kA
Sine wave, 10 ms
150
reapplied reverse voltage up to 50% VRSM
1280 x1E3
2.5
A²s
V
V FM
V F(TO)
r F
Forward voltage
Threshold voltage
Forward slope resistance
Forward current =3400
A
25
150
150
1.03
V
0.362
mohm
SWITCHING
t rr
Q rr
I rr
s
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Softness (s-factor), min
Peak forward recovery
I F = 1000 A
di/dt= 100 A/µs
VR = 100 V
4.6
800
345
0.4
13
µs
µC
A
150
150
V FR
di/dt= 400 A/µs
V
MOUNTING
R th(j-h)
T j
Thermal impedance
Operating junction temperature
Mounting force
Junction to heatsink, double side cooled
26
°C/kW
°C
-30 / 150
18.0 / 20.0
500
F
kN
Mass
g
ORDERING INFORMATION : ARF2012 S 26
VRRM/100
standard specification
ARF2012 FAST RECOVERY DIODE
ANSALDO
FINAL SPECIFICATION apr 97 - ISSUE : 04
DISSIPATION CHARACTERISTICS
SQUARE WAVE
4000
3500
3000
2500
2000
1500
1000
500
DC
180°
120°
90°
60°
30°
0
0
500
1000
1500
2000
2500
Mean Forward Current [A]
SINE WAVE
4000
3500
3000
2500
2000
1500
1000
500
180°
120°
90°
60°
30°
0
0
500
1000
1500
2000
2500
Mean Forward Current [A]
ARF2012 FAST RECOVERY DIODE
ANSALDO
FINAL SPECIFICATION apr 97 - ISSUE : 04
SWITCHING CHARACTERISTICS
FORWARD RECOVERY VOLTAGE
25
20
15
10
5
Tj = 150 °C
IF
VFR
Tj = 25 °C
VF
0
0
200
400
600
800
1000
1200
di/dt [A/µs]
REVERSE RECOVERY CHARGE
Tj = 150 °C
REVERSE RECOVERY CURRENT
Tj = 150 °C
1800
1600
1400
1200
1000
800
600
400
200
0
900
850
800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
1000 A
1000 A
500 A
500 A
250 A
250 A
0
0
100
200
300
400
0
100
200
300
400
di/dt [A/µs]
di/dt [A/µs]
di/dt
ta
ta = Irr / (di/dt)
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 )
tb = trr - ta
IF
tb
Irr
Vr
ARF2012 FAST RECOVERY DIODE
ANSALDO
FINAL SPECIFICATION apr 97 - ISSUE : 04
FORWARD CHARACTERISTIC
Tj = 150 °C
SURGE CHARACTERISTIC
Tj = 150 °C
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
16
14
12
10
8
6
4
2
0
0
0.6
1.1
1.6
2.1
2.6
1
10
n° cycles
100
Forward Voltage [V]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
30.0
25.0
20.0
15.0
10.0
5.0
0.0
0.001
0.01
0.1
1
10
100
t[s]
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement ANSALDO reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
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