AR1109 [POSEICO]
RECTIFIER DIODE; 整流器器二极管
| 型号： | AR1109 |
| 厂家： | 
POWER SEMICONDUCTORS |
| 描述： | RECTIFIER DIODE |
| 文件： | 总4页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
RECTIFIER DIODE
AR1109
Repetitive voltage up to
Mean forward current
Surge current
4400 V
1000 A
10.3 kA
FINAL SPECIFICATION
nov 02 - ISSUE : 05
Tj
Symbol
Characteristic
Conditions
Value
Unit
[°C]
BLOCKING
V RRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak reverse current
150
150
150
4400
4500
50
V
V
V RSM
I
I
RRM
V=VRRM
mA
CONDUCTING
F (AV)
Mean forward current
180° sin ,50 Hz, Th=55°C, double side cooled
180° sin ,50 Hz, Tc=85°C, double side cooled
1000
A
I
I
F (AV)
FSM
Mean forward current
Surge forward current
I² t
905
A
Sine wave, 10 ms
without reverse voltage
150
10.3
kA
I² t
530 x 1E3 A²s
V FM
V F(TO)
r F
Forward voltage
Threshold voltage
Forward slope resistance
Forward current =
1800 A
25
1.80
0.89
V
V
150
150
0.675
mohm
SWITCHING
t rr
Q rr
I rr
Reverse recovery time
µs
µC
A
Reverse recovery charge
Peak reverse recovery current
150
MOUNTING
R th(j-h)
R th(c-h)
T j
Thermal impedance, DC
Thermal impedance
Operating junction temperature
Mounting force
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
37
7
°C/kW
°C/kW
°C
-30 / 150
F
11.8
300
/ 13.2
kN
Mass
g
ORDERING INFORMATION : AR1109 S 44
VRRM/100
standard specification
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
AR1109 RECTIFIER DIODE
FINAL SPECIFICATION nov 02 - ISSUE : 05
DISSIPATION CHARACTERISTICS
SQUARE WAVE
Th [°C]
150
140
130
120
110
100
90
30°
80
60°
90°
70
120°
180°
DC
60
50
0
200
400
600
800
1000
1200
1400
1600
IF(AV) [A]
PF(AV) [W]
3000
2500
2000
1500
1000
500
DC
180°
120°
90°
60°
30°
0
0
200
400
600
800
1000
1200
1400
1600
IF(AV) [A]
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
AR1109 RECTIFIER DIODE
FINAL SPECIFICATION nov 02 - ISSUE : 05
DISSIPATION CHARACTERISTICS
SINE WAVE
Th [°C]
170
150
130
110
90
30°
60°
90°
120°
70
180°
50
0
200
400
600
800
1000
1200
1400
1600
IF(AV) [A]
PF(AV) [W]
3000
180°
2500
2000
1500
1000
500
90°
120°
60°
30°
0
0
200
400
600
800
1000
1200
1400
1600
IF(AV) [A]
POSEICO
AR1109 RECTIFIER DIODE
POSEICO SPA
POwer SEmiconductors Italian COrporation
FINAL SPECIFICATION nov 02 - ISSUE : 05
FORWARD CHARACTERISTIC
Tj = 150 °C
SURGE CHARACTERISTIC
Tj = 150 °C
3500
3000
2500
2000
1500
1000
500
12
10
8
6
4
2
0
0
0.6
1.1
1.6
2.1
2.6
1
10
100
Forward Voltage [V]
n° cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0.0
0.001
0.01
0.1
1
10
100
t[s]
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO SpA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
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