MGDQ01 [POLYFET]

Power RF Amplifiers; 功耗射频放大器
MGDQ01
型号: MGDQ01
厂家: POLYFET RF DEVICES    POLYFET RF DEVICES
描述:

Power RF Amplifiers
功耗射频放大器

射频放大器
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中文:  中文翻译
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polyfet rf devices  
MGDQ01  
Power RF Amplifiers  
Watts  
Power = 15.0  
Bandwidth = 30 to 512 Mhz  
Gain = 25.0 dB Vdd =28.0 Volts  
50 ohms Input/Output Impedance  
Description  
The MGDQ01 is a 15 Watt, 2 stage high gain  
amplifier covering a bandwidth of 30-512 Mhz  
using SMA connectors for RF in and out. This  
module is suitable for military applications in a  
rugged environment. An ALC pin is provided to  
control the output power of the module. The  
MGDQ01 may be used as the driver stage for  
the MBDQ01 module.  
o
Absolute Maximum Ratings (T=25 C)  
Parameter  
Symbol  
VDD1  
VDD2  
VAGC  
Pin  
Value  
Unit  
V
32.0  
DC supply Voltage 1  
DC supply Voltage 2  
AGC Voltage  
V
8.00  
V
0.05  
20.0  
Input Power  
W
W
Output Power  
Pout  
o
-20 to +85  
Operating Case Temp.  
Storage Temperature  
Tc  
C
o
-30 to +100  
Tstg  
C
o
28.0  
Electrical Characteristics: ( T=25 C Zs=Zl=50 ohms. Vdd=  
Volts )  
Parameter  
Symbol  
BW  
Min  
Typical  
Max  
Unit  
Mhz  
Watts  
dB  
Test Conditions  
Frequency Range  
Outut Power  
30  
512  
50 ohm load  
15.0  
25.0  
15  
2.00  
Po  
Idq =  
Amps  
15.0  
Power Gain  
PG  
@ Pout =  
Watts  
15.0  
Total Efficiency  
2nd Harmonics  
Intermod - 2 tone  
@ Pout =  
%
Watts  
h
dso  
Ip3  
-20.00  
15.0  
@ Pout =  
270  
W. Freq =  
dBc  
dBm  
Mhz  
W
270  
Freq =  
Mhz;  
AvePwr=  
10:1  
Load Mismatch Tolerance VSWR  
Relative All Phase Angles  
REVISION 01/17/2006  
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com  
POLYFET RF DEVICES  
MGDQ01  
MGDQ01 F=30MHz Vds=28Vdc  
MGDQ01 F=250MHz Vds=28Vdc  
28  
24  
20  
16  
12  
8
37  
36  
35  
34  
33  
32  
31  
24  
20  
16  
12  
8
31.5  
31.0  
30.5  
30.0  
29.5  
29.0  
Pout  
Pout  
Gain  
Gain  
4
4
Efficiency@15W=20%  
Efficiency@15W=20%  
0
0
0
2
4
6
8
10 12 14 16  
0
5
10  
15  
20  
25  
VAGC=8V  
Pin in MilliWatts  
Pin in MilliWatts  
VAGC=8V  
MGDQ01 F=30MHz Vds=28Vdc  
MGDQ01 F=512MHz Vds=28Vdc  
32  
28  
24  
20  
16  
12  
8
32  
28  
24  
20  
16  
12  
8
20  
18  
16  
14  
12  
10  
8
6
4
2
0
31.0  
30.5  
30.0  
29.5  
29.0  
28.5  
Gain  
Gain  
Pout  
Pout  
4
4
Efficiency@15W=19%  
0
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0  
0
5
10  
15  
20  
25  
VAGC=8V  
VAGC  
Pin=+14dBm  
Pin in MilliWatts  
MGDQ01 F=512MHz Vds=28Vdc  
MGDQ01 F=250 MHz Vds=28Vdc  
24  
22  
20  
18  
16  
14  
12  
10  
8
30  
25  
20  
15  
10  
5
30  
20  
16  
12  
8
Gain  
Gain  
25  
20  
15  
10  
5
Pout  
6
4
Pout  
4
2
0
0
0
0
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0  
VAGC  
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5  
Pin=+14dBm  
VAGC  
Pin=+14dBm  
REVISION 01/17/2006  
POLYFET RF DEVICES  
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com  

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